• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.700-702
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• 2009

We present the epitaxial growth of high-quality ZnO layers by chemical vapor transport (CVT) technique on (01-12) sapphire with a ZnO buffer layer growth by metal-organic chemical vapor deposition (MOCVD). The surface of the grown ZnO epitaxial layers has atomically flats and the RMS is 0.11 nm. PL spectrum of as-grown samples exhibits two emissions originated by interactions between photon and free excitons.

• Transactions on Electrical and Electronic Materials
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• v.4 no.5
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• pp.6-9
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• 2003

Electrophoretic deposition (EPD) of alcohol YBCO suspensions on the Ag wire electrode is studied. Polyethyleneglycol was coordinated to a structure formed by the EPD process with YBCO particles. The d.c electric fields of 200-300 V/cm are applied for 1-10 min. The optimal condition for the EPD allows modifying the properties and microstructure of the deposited films. Superconducting coatings with nanometer-sized pores and a preferred orientation along the caxis were prepared from the result with chemically modified precursor solution. In contrast, YBCO coatings of submicrometer-sized pores and randomly orientated grains were prepared from the solution without PEG.

• Journal of Sensor Science and Technology
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• v.24 no.5
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• pp.348-352
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• 2015

Thin nickel oxide films formed on uncooled and cooled $SiO_2/Si$ substrates using a radio frequency (RF) magnetron sputter powered by 200 W in a mixed atmosphere of argon and oxygen. Grazing-incidence X-ray diffraction and field emission scanning electron microscopy are used for the structural analysis of nickel oxide films. The electrical conductivity required for better bolometric performance is estimated by means of a four-point probe system. Columnar and (200) preferred orientations are discovered in both films regardless of substrate cooling. Electric resistivity, however, is greatly influenced by the substrate cooling. Oxygen partial pressure increase during the nickel oxide deposition leads to a rapid decrease in resistivity, and the resistivity is higher in the cooled nickel oxide samples. Even when small microstructure variations are applied, lower resistivity in favor of low noise performance is acquired in the uncooled samples.

• Journal of information and communication convergence engineering
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• v.4 no.3
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• pp.105-107
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• 2006

Amorphous silicon is a kind of optical to electric conversion material with current or voltage type after generating a numerous free electron and hole when it is injected by light. It is very effective technology to make schottky diode by bonding thin film to use optical diode. In this paper, we have fabricated optical diode device by forming chrome silicide film through thermal processing with thin film($100{\AA}$) having optimal amorphous silicon. The optimal condition is that we make a thin film by using PECVD(Plasma Enhanced Chemical Vapor Deposition) to improve reliability and characteristics of optical diode. We have obtained high quality diode by using chrome silicide optical diode from dark current and optical current measurement compared to previous method. It makes a simple process and improves a good reliability.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.187-193
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• 1999

In this study, PVDF thin films which show the excellent piezoelectricity and pyroelectricity, are prepared by PVD (physical vapor deposition) method, and thir electrical conduction phenomena for analyses of the electrical conduction mechanism and TSC (Thermally Stimulated Current) for identification of the behavior of conductive carriers are investigated. As a result of FT-IR(Fourier Transform Infrared Spectroscopy) spectra, the crystalline phase transforms $\alpha$ type into $\beta$ type with increasing electric field. From XRD (X-Ray diffraction) analyses patterns, the degree of crystallinity increases from 49.8% to 67%, as the substrate temperature increases from $30^{\circ}C$ to $80^{\circ}C$. As a result of electrical conduction phenomena, the electrical conduction mechanism of PVDF thin films is identified as ionic conduction mechanism. From TSC analyses, there are three peaks as P1, P2, P3 with increasing temperature, and with increasing substrate temperature, the peak temperature of TSC increases and the peak intensity of TSC decreases.

• 제어로봇시스템학회:학술대회논문집
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• 2001.10a
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• pp.37.1-37
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• 2001

Electric plating is used in various industry field. Specially, pulse plating is able to deposit material at high current density compared to conventional DC plating. For example, pulse plating can get more fine grain, can improve adhesion and metal distribution and current efficiency, can reduce internal stress and crack. Therefore, we developed bidirection pulse power supply(BPPS) which has high speed pulse current and high current density and improve deposition quality and increase plating speed in this paper. BPPS(Bidirection pulse power supply) needs high speed rising time, falling time and output current accuracy. BPPS consists of rectifier part, chopper part, invertor part, and control part. Rectifier part changes outprt current direction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.4
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• pp.322-332
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• 2022

Energy storage capacitors based on dielectric ceramics with superior polarization properties and dielectric constant can provide much higher output power density due to their very fast energy charging/discharging rates, which are particularly suitable for operating pulsed-power devices. For an outstanding energy storage performance of dielectric capacitor, a large recoverable energy density could be derived by introducing a slim polarization-electric field hysteresis loop into dielectric materials by various technical approaches. Many research teams have explored various dielectric capacitor technologies to demonstrate high output power density and ultrafast charging/discharging behavior. This article reviews the recent research progress in high-performance dielectric capacitors for pulsed-power electronic applications.

• Structural Engineering and Mechanics
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• v.82 no.2
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• pp.259-270
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• 2022

The paper investigates the residual stresses arising in a thermoviscoelastic cylinder as a result of layer-by-layer deposition of material on its lateral surface. Internal stresses are caused by incompatible deformations that accumulate in the assembly as a result of joining parts with different temperatures. For the analysis of internal stresses, an analytical solution to the axisymmetric quasi-static problem of thermoelasticity for a growing cylinder is constructed. It is shown that the distribution of residual stresses depends on the scenario of the surfacing process. In this case, the supply of additional heat to the growing body can significantly reduce the unevenness of temperature fields and reduce the intensity of residual stresses. The most effective is uneven heating, which can be realized, by the action of an alternating current with a tunable excitation frequency. The temperature and residual stresses fields on the growing surface is analyzed numerically for Titanium and Copper materials.

• Journal of Ocean Engineering and Technology
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• v.25 no.1
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• pp.39-43
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• 2011

This study has lowered the specific resistance by coating a thin film layer of Ag, playing the role of the electron donor on the ZnO that is used usefully for the transparent conductive oxides. Presently, this study has examined the transmittance and electric characteristics according to the thickness of the Ag thin film layer. Also, this study has observed the transmittance and electric characteristics according to the uppermost ZnO thin film layer of ZnO/Ag/ZnO symmetric film and has conducted the theoretical investigation. In order to observe the transmittance and electric characteristics according to the thickness of the Ag thin film layer and the uppermost ZnO thin film layer, this study conducted the film deposition at room temperature while making use of the DC magnetron sputtering system. In order to see the changes in the thickness of the Ag thin film layer, this study coated a thin film while increasing by 4nm; and, in order to see the changes in the thickness of uppermost ZnO thin film layer, it performed the thin film coating by increasing by 5nm. From the experimental result, the researchers observed that the best transmittance could be obtained when the thickness of the Ag thin film layer was 8nm, but the resistance and mobility increased as the thickness got larger. On the other hand, when the thickness of the uppermost ZnO thin film layer was 20nm, the experiment yielded the best transmittance with excellent electric characteristics. Also, when compared the ZnO/Ag asymmetric film with the ZnO/Ag/ZnO symmetric film, the ZnO/Ag asymmetric film showed better transmittance and electric characteristics.

• Applied Chemistry for Engineering
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• v.19 no.2
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• pp.228-235
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• 2008

Nickel plating thickness increased with the electric current density, and the augmentation was more thick in $6{\sim}10A/dm^2$ than low current. Hull-cell analysis was tested to evaluate the current density. Optimum thickness was obtained at a temperature of $60^{\circ}C$, and the pH fluctuation of 3.5~4.0. Over the Nickel ion concentration of 300 g/L, plating thickness increased with the current density. The rate of decrease in nickel ion concentration was increased with the current density. The quantity of plating electro-deposition was increased at the anode surface, which was correlated with the increase of plating thickness. The plating thickness was increased because of the quick plating speed. However, the condition of the plating surface becomes irregular and the minuteness of nickel plating layer was reduced with the plating rate. After the corrosion test of 25 h, it was resulted in that maintaining low electric current density is desirable for the excellent corrosion resistance in lustered nickel plating. According to the program simulation, the thickness of diffusion layer was increased and the concentration of anode surface was lowered for the higher current densities. The concentration profile showed the regular distribution at low electric current density. The field plating process was controlled by the electric current density and the plating thickness instead of plating time for the productivity. The surface physical property of plating structure or corrosion resistance was excellent in the case of low electric current density.