• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.177-183
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• 2014

Alumina-silica composite coating layers were prepared by electrophoretic deposition (EPD) of plate-shaped alumina particles dispersed in a sol-gel binder, which was prepared by hydrolysis and the condensation reaction of methyltrimethoxysilane in the presence of colloidal silica. The microstructure and the electrical and thermal properties of the coatings were compared according to the EPD process parameter: voltage, time and the content of the plate-shaped alumina particles. The electrical insulation property of the coatings was measured by a voltage test. The coatings were prepared by EPD of the sol-gel binder with 5-30 wt% plate alumina particles on parallel electrodes at a distance of 2 cm for 1-10 min under an applied voltage of 10-30 V. The coatings experienced increased breakdown voltage with increasing thickness. However, the higher the thickness was, the smaller the breakdown voltage strength was. A breakdown voltage as high as 4.6 kV was observed with a $400{\mu}m$ thickness, and a breakdown voltage strength as high as 27 kV/mm was achieved for the sample under a $100{\mu}m$ thickness.

• Journal of the Korean Vacuum Society
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• v.17 no.5
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• pp.448-454
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• 2008

The purpose of this paper is to discuss the fabrication of $\beta$-PVDF($\beta$-Polyvinylidene fluoride, ${\beta}-PVF_2$) organic thin films through the vapor deposition method and to investigate the piezoelectric properties of the organic thin films produced. Vapor deposition was performed under the following conditions : the temperature of evaporator, the applied electric field and the pressure of reaction chamber were $270^{\circ}C$, 142.4 kV/cm and $2.0{\times}10^{-5}Torr$, respectively. The results showed that the amount of $\beta$-form PVDF increased from 72 % to 95.5 % with an increase in the substrate temperature. In the case of a sensor response characteristic by varying the force moment from $1.372{\times}10^{-5}N{\cdot}m$ to $39.2{\times}10^{-5}N{\cdot}m$, the output voltage increased from 1.39V to 7.04V.

• Bulletin of the Korean Chemical Society
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• v.24 no.3
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• pp.363-368
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• 2003

The major ionic components of precipitation collected at the 1100 Site of Mt. Halla and Jeju city have been determined. The reliability of the analytical data was verified by the comparison of ion balances, electric conductivities and acid fractions; all of their correlation coefficients were above 0.94. Ionic strengths lower than $10^{-4}$ M were found in 53% of the 1100 Site samples and 28% of the Jeju city samples. Compared with other inland areas, the wet deposition of $Na^+,\;Cl^-\;and\;Mg^{2+}$ was relatively larger, but that of $NH_4^+,\;nss-SO_4^{2-}$(non-sea salt sulfate) and $NO_3^-$ was lower. Especially the wet deposition increase of $Ca^{2+}$ in the spring season supports the possibility of the Asian Dust effect. The acidification of precipitation was caused mostly by $SO_4^{2-}\;and\;NO_3^-$ in the Jeju area, and the organic acids have contributed only about 7% to the acidity. The neutralization factors by NH₃were 0.47 and 0.48, and that of CaCO₃was 0.31 and 0.25 at the 1100 Site and Jeju city, respectively. Investigation into major influencing sources on precipitation components by factor analysis showed that the precipitation at the 1100 Site had been influenced mostly by an anthropogenic source, followed by soil and seawater sources. The precipitation at Jeju city was mainly influenced by oceanic sources, followed by anthropogenic and soil sources.

• The Journal of Korean Academy of Prosthodontics
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• v.45 no.6
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• pp.769-779
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• 2007

Statement of problem. When TiN coating is applied to the abutment screw, occurrence of greater preload and prevention of the screw loosening could be expected due to decrease of frictional resistance. However, the proper thickness of TiN coating on abutment screw has not been yet reported. Purpose. The purpose of this study is to find out the appropriate TiN coating thickness by evaluating the detorque force and the surface change of titanium abutment screw with various TiN coating thickness. Material and methods. 1. Material Thirty five non-coated abutment screws were prepared for TiN coating. TiN coatings were prepared by Arc ion plating method. Depending on the coating deposition time(CDT), experimental groups were divided into 6 groups(CDT 30min, 60min, 90min, 120min, 150min, 180min) and those of 1 group was not coated as a control group. Each group was made up of 5 abutment screws. 2. Methods FE-SEM(Field Emission Scanning Electron Microscoper) and EDX(Energy Dispersive X-ray Spectroscopy) were used to observe the surface of the abutment screw. Electric scales was used to measure the weight of the abutment screw after the repeated closing and opening of 10 trials. Detorque force was measured with digital torque gauge, at each trial. Results. 1. As the coating deposition time increased, the surface became more consistent and smooth. 2. As for the abutment screws that were TiN coated for more than 60 minutes, no surface change was found after the repeated closing and opening. 3. The TiN coated abutment screws showed less weight change than the non-coated abutment screws. 4. The TiN coated abutment screws showed higher mean detorque force than the noncoated abutment screws. 5. The abutment screw coated for 60 minutes showed the highest mean detorque force. Conclusion. The coating layer of proper thickness is demanded to obtain consistent and smooth coating surface, resistance to wear, and increased detorque force of the abutment screw. In conclusion, the coating deposition time of 60 minutes indicated improved mechanical property, when TiN coating was conducted on titanium abutment screw.

• Journal of the Korean institute of surface engineering
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• v.36 no.1
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• pp.27-33
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• 2003

Pulsed magnetron sputtering of graphite target was employed for deposition of diamond-like carbon (DLC) films. Time-resolved probe measurements of magnetron discharge plasma have been performed. It was shown that the pulsed magnetron discharge plasma density ($∼10^{17}$ $m^{-3}$ ) is close to that of vacuum arc cathode sputtering of graphite. Raman spectroscopy was sed to examine DLC films produced at low ( $U_{sub}$ / < 1 kV) pulsed bias voltages applied to the substrate. It has been shown that maximum content of diamond-like carbon in the coating (50-60%) is achieved at energy per deposited carbon atom of $E_{c}$ =100 eV. In spite of rather high percentage of $sp^3$-bonded carbon atoms and good scratch-resistance, the films showed poor adhesion because of absence of ion mixing between the film and the substrates. Electric breakdowns occurring during the deposition of the insulating DLC film also thought to decrease its adhesion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.226-230
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• 2018

Pure $BiFeO_3$ (BFO) and codoped $Bi_{0.9}A_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (A=Eu, Dy) thin films were prepared on Pt(111)/Ti/$SiO_2$/Si(100) substrates by chemical solution deposition. The remnant polarizations (2Pr) of the $Bi_{0.9}Eu_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (BEFZO) and $Bi_{0.9}Dy_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (BDFZO) thin films were about 36 and $26{\mu}C/cm^2$ at the maximum electric fields of 900 and 917 kV/cm, respectively, at 1 kHz. The codoped BEFZO and BDFZO thin films showed improved electrical properties, and leakage current densities of 3.68 and $1.21{\times}10^{-6}A/cm^2$, respectively, which were three orders of magnitude lower than that of the pure BFO film, at 100 kV/cm.

• Korean Journal of Materials Research
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• v.27 no.6
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• pp.295-300
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• 2017

Aluminum-oxide($Al_2O_3$) thin films were deposited by electron cyclotron resonance plasma-enhanced atomic layer deposition at room temperature using trimethylaluminum(TMA) as the Al source and $O_2$ plasma as the oxidant. In order to compare our results with those obtained using the conventional thermal ALD method, $Al_2O_3$ films were also deposited with TMA and $H_2O$ as reactants at $280^{\circ}C$. The chemical composition and microstructure of the as-deposited $Al_2O_3$ films were characterized by X-ray diffraction(XRD), X-ray photo-electric spectroscopy(XPS), atomic force microscopy(AFM) and transmission electron microscopy(TEM). Optical properties of the $Al_2O_3$ films were characterized using UV-vis and ellipsometry measurements. Electrical properties were characterized by capacitance-frequency and current-voltage measurements. Using the ECR method, a growth rate of 0.18 nm/cycle was achieved, which is much higher than the growth rate of 0.14 nm/cycle obtained using thermal ALD. Excellent dielectric and insulating properties were demonstrated for both $Al_2O_3$ films.

• Applied Chemistry for Engineering
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• v.10 no.5
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• pp.644-651
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• 1999

In this experiment the Iron phthalocyanine (FePc) films on Si-wafer and alumina pallet were prepared using vacuum sublimation with conditions of changing reaction time, temperature, and deposition rate. Then, some samples were annealed following annealing. Techniques such as XRD, SEM, and resistance measurement method, were dedicated to characterize the changes of surface structure, phase transformation and electric resistance sensitivity in accordance with change of film thickness. In proportion to the decrease of deposition temperature from $370^{\circ}C$ to $350^{\circ}C$, intensities of (200), (011), (211) and (114) planes of $\alpha$-phase were decreased and (100) plane of $\beta$-phase were appeared. The film thickness were controlled by regulating the volume of precursor material during rapid deposition. As a result, it was observed that crystalline particle size had been increased according to the increase of film thickness and $\alpha$-phase transformed to $\beta$-phase. In consequence of measuring the crystallinity of films annealed between $150^{\circ}C$ and $350^{\circ}C$, $\alpha$- to $\beta$-phase transformation was appeared to begin at $150^{\circ}C$ and completely transformed to $\beta$-phase at $350^{\circ}C$. Electric resistance sensitivity of FePc film to $NO_x$ gas along temperature change of FePc films was observed to be more stable with the decrease of the film thickness.

• KEPCO Journal on Electric Power and Energy
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• v.1 no.1
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• pp.175-180
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• 2015

A facile soft chemical synthesis route is used to grow nano-buds of copper hydroxide [$Cu(OH)_2$] thin films on stainless steel substrate[SS]. Besides different chemical methods for synthesis of $Cu(OH)_2$ nanostructure, the chemical bath deposition (CBD) is attractive for its simplicity and environment friendly condition. The structural, morphological, and electro-chemical properties of $Cu(OH)_2$ thin films are studied by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), cyclic voltammetry (CV) and galvanostatic charge-discharge (GCD) measurement techniques. The results showed that, facile chemical synthesis route allows to form the polycrystalline, granular nano-buds of $Cu(OH)_2$ thin films. The electrochemical properties of $Cu(OH)_2$ thin films are studied in an aqueous 1 M KOH electrolyte using cyclic voltammetry. The sample exhibited supercapacitive behavior with $340Fg^{-1}$ specific capacitance. Moreover, electrochemical capacitive measurements of $Cu(OH)_2/SS$ electrode exhibit a high specific energy and power density about ${\sim}83Wh\;kg^{-1}$ and ${\sim}3.1kW\;kg^{-1}$, respectively, at $1mA\;cm^{-2}$ current density. The superior electrochemical properties of copper hydroxide ($Cu(OH)_2/SS$) electrode with nano-buds like structure mutually improves pseudocapacitive performance. This work evokes scalable chemical synthesis with the enhanced supercapacitive performance of $Cu(OH)_2/SS$ electrode in energy storage devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.723-727
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• 2003

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin film of $1000{\AA}$ was pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $3000{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800^{\circ}C$ in air, respectively The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was no difference in the crystal structure with heat-treatment temperature, but the electric properties depended on the heating temperature and was the best at $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15{\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1075, respectively.