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http://dx.doi.org/10.4313/JKEM.2018.31.4.226

Structural and Electrical Properties of Bi0.9A0.1Fe0.975Zn0.025O3-δ (A=Eu, Dy) BiFeO3 Thin Films by Chemical Solution Deposition  

Kim, Youn-Jang (Department of Electronics, Chungwoon University)
Kim, Jin-Won (IB materials)
Chang, Sung-Keun (Department of Electronics, Chungwoon University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.31, no.4, 2018 , pp. 226-230 More about this Journal
Abstract
Pure $BiFeO_3$ (BFO) and codoped $Bi_{0.9}A_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (A=Eu, Dy) thin films were prepared on Pt(111)/Ti/$SiO_2$/Si(100) substrates by chemical solution deposition. The remnant polarizations (2Pr) of the $Bi_{0.9}Eu_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (BEFZO) and $Bi_{0.9}Dy_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (BDFZO) thin films were about 36 and $26{\mu}C/cm^2$ at the maximum electric fields of 900 and 917 kV/cm, respectively, at 1 kHz. The codoped BEFZO and BDFZO thin films showed improved electrical properties, and leakage current densities of 3.68 and $1.21{\times}10^{-6}A/cm^2$, respectively, which were three orders of magnitude lower than that of the pure BFO film, at 100 kV/cm.
Keywords
$BiFeO_3$; Chemical solution deposition; Microstructure; Electrical properties;
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