• Title/Summary/Keyword: electric deposition

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Effects of Thermal Heat Treatment Process on the Ferroelectric Properties of ReMnO3 (Re:Ho, Er) Thin Films (ReMnO3(Re:Ho, Er) 박막의 강유전성에 미치는 열처리 공정의 영향)

  • Kim, Eung-Soo;Chae, Jung-Hoon
    • Journal of the Korean Ceramic Society
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    • v.42 no.11 s.282
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    • pp.763-769
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    • 2005
  • Ferroelectric $ReMnO_3$(Re:Ho, Er) thin films were deposited on Si(100) substrate by Metal-Organic Chemical Vapor Deposition (MOCVD). Crystallinity and electric properties of $ReMnO_3$(Re:Ho, Er) thin films were investigated as a function of thermal heat treatment process, CHP (Conventional Heat-treatment Process) and RTP (Rapid Thermal Process). $ReMnO_3$(Re:Ho, Er) thin films prepared by RTP showed higher c-axis preferred orientation and homogeneous surface roughness than those prepared by CHP. The remnant polarization of ferroelectric hysteresis loop of $ReMnO_3$(Re:Ho, Er) thin films was strongly dependent on the c­axis preferred orientation of hexagonal single phase, and the leakage current characteristics of thin films were dependent on the homogeneity of grain size as well as surface roughness of thin films.

Field Emission Characteristics of Deffctive Diamond Films

  • Koh, Ken-Ha;Park, Kyung-Ho;Lee, Soon-Il
    • Journal of the Korean Vacuum Society
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    • v.7 no.s1
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    • pp.160-166
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    • 1998
  • The field emission characteristics of defective diamond films grown by microwave plasma enhanced chemical vapor deposition (MPECVD) have been studied. X-ray diffraction, the poor crystal quality and/or small grain sizes of the diamond phase and the inclusion of the non-diamond carbon phases in these films have been condirmed by raman spectroscopy, scanning electron microscopy, atomic force microscopy, and the reflectance measurements. The degrees of the film defectiveness and the emission characteristics were dependent on the methane concentration. Current-versus-voltage measurements have demonstrated that the defective diamond films have good electron emission characteristics. characteristics strongly suggests the defect-related electron-emission mechanism. The defective diamond films deposited on Si substrates show the field emission current density of 1$\mu\textrm{A}/\textrm{cm}^2$ and 1mA/$\textrm{cm}^2$ have been measured at electric fields as low as 4.5V/$\mu\textrm{m}$ and 7.6V/$\mu\textrm{m}$, respectively. We also observed the similar emission characteristics from the defective diamond film deposited on Cr/Si substrate and could decrease the deposition temperature to $600^{\circ}C$.

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Influence of bias voltage on properties of carbon nanotubes prepared by MPECVD (마이크로 웨이브를 이용한 탄소나노튜브 성장시 바이어스 전압의 효자)

  • Choi, Sung-Hun;Lee, Jae-Hyeung;Yang, Jong-Seok;Park, Da-Hee
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1440-1441
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    • 2006
  • In this study, we synthesized CNTs(carbon nanotubes) on the glass substrate by microwave plasma enhanced chemical vapor deposition (MPECVD), Effect of bias voltage on the grown behavior and morphology of CNTs were investigated. Recently, it has been proposed that aligned CNTs can also be achieved by the application of electric bias to the substrate during growth, the first time reported the bias effect such that the nanotube alignment occurred only when a positive bias was applied to the substrate whereas no aligned growth occurred under a negative bias and no tube growth was observed without bias. On the country, several researchers reported some different observations that aligned nanotubes could also be grown under negative substrate biases. This discrepancy as for the effect of positive and negative bias may indicate that the bias effect is not fully understood yet. The glass and Si wafers were first deposited with TiN buffer layer by r.f sputtering method, and then Ni catalyst same method, The thickness of TiN and Ni layer were 200 nm and 60 nm, respectively. The main process parameters include the substrate bias (0 to - 300 V), and deposition pressure (8 to 20 torr).

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FCCL 제작 시 Cu Sputter 조건에 따른 Through Hole 특성 연구

  • Kim, Sang-Ho;Yun, Yeo-Wan
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2008.11a
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    • pp.15-16
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    • 2008
  • In case manufacturing COF, through hole should be made to be used for a pathway connecting the conductive layers of its both faces. In case Cu-plating inside of through hole with electroless plating way, contact between Cu and PI film gets bad to be fell apart from PI by the impact of applying to the electric devices. Therefore, after sputtering is applying on inner through hole, then a method to perform electroplating process. In this study, after changing sputtering condition to manufacture FCCL, we looked the changeability of the upper PI and inner hole Cu layers. Making use of RF Magnetron sputtering equipment, we coated Cu thin film and Cu-plated on it through electroplating. After cold-mounting the completed FCCL, we examined hole section through an optical microscope. From the result of test, with parameters deposition pressure and deposition time, both the thickness of the hole plated layer and PI plated upper layer increased at regular rate, increasing the thickness of Cu sputter layer. However, from the result of test in increasing RF-power, we could know the increment rate of hole plated layer is considerably greater than that of PI plated upper layer. Therefore, we finally acquired good result; if you want only to increase the plated layer of inner hole, it's much better to increase RF-power.

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Growth and Characterization of Vertically well Aligned Crbon Nanotubes on Glass Substrate by Plasma Enhanced Hot Filament Chemical Vapor deposition

  • Park, Chong-Yun;Yoo, Ji-Beom
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.210-210
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    • 2000
  • Vertically well aligned multi-wall carbon nanotubes (CNT) were grown on nickel coated glass substrates by plasma enhanced hot filament chemical vapor deposition at low temperatures below 600$^{\circ}C$. Acetylene and ammonia gas were used as the carbon source and a catalyst. Effects of growth parameters such as pre-treatment of substrate, plasma intensity, filament current, imput gas flow rate, gas composition, substrate temperature and different substrates on the growth characteristics of CNT were systematically investigated. Figure 1 shows SEM image of CNT grown on Ni coated glass substrate. Diameter of nanotube was 30 to 100nm depending on the growth condition. The diameter of CNT decreased and density of CNT increased as NH3 etching time etching time increased. Plasma intensity was found to be the most critical parameter to determine the growth of CNT. CNT was not grown at the plasma intensity lower than 500V. Growth of CNT without filament current was observed. Raman spectroscopy showed the C-C tangential stretching mode at 1592 cm1 as well as D line at 1366 cm-1. From the microanalysis using HRTEM, nickel cap was observed on the top of the grown CNT and very thin carbon amorphous layer of 5nm was found on the nickel cap. Current-voltage characteristics using STM showed about 34nA of current at the applied voltage of 1 volt. Electron emission from the vertically well aligned CNT was obtained using phosphor anode with onset electric field of 1.5C/um.

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Structural and Electrical Properties of BiFeO3 Thin Films by Eu and V Co-Doping (Eu와 V 동시 도핑에 의한 BiFeO3 박막의 구조와 전기적 특성)

  • Chang, Sung-Keun;Kim, Youn-Jang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.3
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    • pp.229-233
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    • 2019
  • Pure $BiFeO_3$ (BFO) and (Eu, V) co-doped $Bi_{0.9}Eu_{0.1}Fe_{0.975}V_{0.025}O_{3+{\delta}}$ (BEFVO) thin films were deposited on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by chemical solution deposition. The effects of co-doping were observed by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy (SEM). The electrical properties of the BEFVO thin film were improved as compared to those of the pure BFO thin film. The remnant polarization ($2P_r$) of the BEFVO thin film was approximately $26{\mu}C/cm^2$ at a maximum electric field of 1,190 kV/cm with a frequency of 1 kHz. The leakage current density of the co-doped BEFVO thin film ($4.81{\times}10^{-5}A/cm^2$ at 100 kV/cm) was two orders of magnitude lower than of that of the pure BFO thin film.

A Study on the Tribological Characteristics of AL7075-T7351 Aluminum Alloy Coated with TiN Nano Thin Film (TiN 나노 박막을 코팅한 AL7075-T7351 알루미늄 합금의 트라이볼로지 특성에 관한 연구)

  • Kwang-Su Kim;Sung-Hoon Im;Do-Hyeon Kim;Hyeong-Jun Park;Sun-Cheol Huh
    • Journal of the Korean Society of Industry Convergence
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    • v.26 no.5
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    • pp.743-750
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    • 2023
  • Aluminum alloy is a material widely used in the aircraft industry. However, since it has relatively low hardness, strength and tribological properties, it is necessary to improve these properties. In this paper, a TiN thin film was coated on the surface of AL7075-T7351 using DC magnetron sputtering. The coating was performed by setting different deposition pressure, deposition time, and applied power. Then, the tribological properties of the thin film were investigated. As a result of the experiment, the hardness of the thin film was higher than that of the base material, and the specimen with the highest hardness had excellent friction coefficient, wear amount, and adhesive strength characteristics. Through this study, it was confirmed that the tribological characteristics of aluminum alloy can be improved by depositing thin films using DC magnetron sputtering.

Phase Evolution and Electrical Properties of PZT Films by Aerosol-Deposition Method (에어로졸 증착법에 의해 제조된 PZT 막의 상변화와 전기적 특성)

  • Park, Chun-Kil;Kang, Dong-Kyun;Lee, Seung-Hee;Kong, Young-Min;Jeong, Dae-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.9
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    • pp.541-545
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    • 2017
  • $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) films with a thickness of $5{\sim}10{\mu}m$ at the morphotropic phase boundary were fabricated by aerosol-deposition (AD), and their phase evolution and electrical properties were investigated. The microstructure of the AD PZT films revealed nanosized grains with a low crystallinity and a dense structure at room temperature. The AD PZT films showed a mixture of tetragonal and rhombohedral phases. The post-annealing temperature was varied to study the phase transition behavior. The crystallinity of the AD PZT films was enhanced by annealing at 450, 550, and $650^{\circ}C$ for 2 h. At $650^{\circ}C$, the tetragonal and rhombohedral phases reacted to form a bridge phase between the two phases. The polarization-electric field hysteresis loops of the AD PZT film annealed at $650^{\circ}C$ exhibited a smaller cohesive field and a lower slim hysteresis than the films annealed at 450 and $550^{\circ}C$.

A Study on the Ultrasonic Response Characteristic of PVDF Organic Thin Film by Physical Vapor Deposition Method (진공증착법으로 제조된 PVDF 유기박막의 초음파 응답 특성에 관한 연구)

  • Park, Soo-Hong
    • Journal of the Korean Vacuum Society
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    • v.18 no.3
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    • pp.221-228
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    • 2009
  • The purpose of this paper is to discuss the fabrication of $\beta$-PVDF($\beta$-Polyvinylidene fluoride, $\beta$-PVF2) organic thin films through the vapor deposition method and to investigate the ultrasonic response properties of the organic thin films produced. Vapor deposition was performed under the following conditions : the temperature of evaporator, the applied electric field and the pressure of reaction chamber were $270^{\circ}C$, 142.4 kV/cm and $2.0{\times}10^{-5}\;Torr$, respectively. The results showed that the degree of crystallinity increased from 47% to 67.8% with an increase in the substrate temperature. In the case of a sensor response characteristic by varying the distance from 1cm to 100cm, the output voltage decreased from 0.615V to 0.4V.

Electrical Properties of YSZ Electrolyte Film Prepared by Electron Beam PVD (EB-PVD법에 의해 제조된 YSZ 전해질의 전기적 특성)

  • Shin, Tae-Ho;Yu, Ji-Haeng;Lee, Shiwoo;Han, In-Sub;Woo, Sang-Kuk;Hyun, Sang-Hoon
    • Journal of the Korean Ceramic Society
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    • v.42 no.2 s.273
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    • pp.117-122
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    • 2005
  • Electron Beam Physical Vapor Deposition (EB-PVD) is a typical technology for thermal barrier coating with Yttria Stabilized Zirconia (YSZ) on aero gas turbine engine. In this study EB-PVD method was used to fabricate dense YSZ film on NiO-YSZ as a electrolyte of Solid Oxide Fuel Cell (SOFC). Dense YSZ films of -10 $\mu$m thickness showed nano surface structure depending on deposition temperature. Electrical conductivities of YSZ film and electric power density of the single cell were evaluated after screen- printing $LaSrCoO_3$ as a cathode.