• Asian Journal of Atmospheric Environment
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• 제11권4호
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• pp.270-282
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• 2017

To evaluate the deposition amount on a ground surface, mesoscale numerical models coupled with atmospheric chemistry are widely used for larger horizontal domains ranging from a few to several hundreds of kilometers; however, these models are rarely applied to high-resolution simulations. In this study, the performance of a dry and wet deposition model is investigated to estimate the amount of deposition via computational fluid dynamics (CFD) models with high grid resolution. Reynolds-averaged Navier-Stokes (RANS) simulations are implemented for a cone and a two-dimensional ridge to estimate the dry deposition rate, and a constant deposition velocity is used to obtain the dry deposition flux. The results show that the dry deposition rate of RANS generally corresponds to that observed in wind-tunnel experiments. For the wet deposition model, the transport equation of a new scalar concentration scavenged by rain droplets is developed and used instead of the scalar concentration scavenged by raindrops falling to the ground surface just below the scavenging point, which is normally used in mesoscale numerical models. A sensitivity analysis of the proposed wet deposition procedure is implemented. The result indicates the applicability of RANS for high-resolution grids considering the effect of terrains on the wet deposition.

• Journal of the Korean Physical Society
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• 제73권11호
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• pp.1712-1715
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• 2018

To study the applications for ferroelectric non-volatile memory and ferroelectric memristor, etc., deposition pressure dependent electric the properties of $(Hf,\;Zr)O_2$ thin films by RF sputtering deposition method were investigated. The bottom electrode was TiN thin film to produce stress effect on the formation of orthorhombic phase and top electrode was Pt thin film by DC sputtering deposition. Deposition pressure was varied along with the same other deposition conditions, for example, sputtering power, target to substrate distance, post-annealing temperature, annealing gas, annealing time, etc. The structural and electric properties of the above thin films were investigated. As a result, it is confirmed that the electric properties of the $(Hf,\;Zr)O_2$ thin films depend on the deposition pressure which affects structural properties of the thin films, such as, structural phase, ratio of the constituents, etc.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1644-1648
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• 2002

The relationships between MgO deposition conditions and firing voltage of AC PDP were investigated as a function of ambient temperature. Substrate temperature and growth rate were selected as the major parameters that can affect the properties of MgO most significantly. Firing voltages increase with increasing temperature regardless of deposition conditions of the MgO layer. However, the relative magnitude of the firing voltage variation decrease with increasing substrate temperature and decreasing deposition speed. It was also found that the sample obtained at the condition of lower deposition rate shows better dynamic margin characteristics.

• 한국시뮬레이션학회논문지
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• 제17권2호
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• pp.13-19
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• 2008

본 연구에서는 드레인 부근의 채널 영역에서 접합 전계를 줄이는 Buffered deposition 구조의 소자를 제안하였다. Buffered deposition 구조의 소자 제작은 첫 번째 게이트를 식각한 후에 NM1(N-type Minor1) 이온주입을 하고 다시 HLD막과 질화막을 덮어 식각하여 제작하였다. 이러한 Buffered deposition 구조는 전계를 줄이기 위한 버퍼층으로 되어 있으며 Buffered deposition 소자의 여러 가지 구조의 Hot carrier 수명을 비교하였으며 열화 특성도 분석하여 10년간의 Hot carrier 수명을 만족함을 증명하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.230-234
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• 2000

Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-law growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.

• 대한기계학회논문집B
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• 제23권3호
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• pp.299-310
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• 1999

Effect of electrostatic and inertial forces on the pre-charged particle deposition was theoretically and experimentally studied by introducing the inertia impactor subjected to an electric field. To derive the analytic solution, we assumed that a flow was an ideal stagnation flow, a particle had saturation charges, and the electric field within the test section was uniform. On the other hand, $Al_2O_3$ particle groups were used as the test particles, which mean sizes were $1{\mu}m$, $3{\mu}m$, and $5{\mu}m$. To measure the deposition efficiency, the light scattering method was used. The results showed that the deposition efficiency was minimized at a certain nozzle velocity as increasing the nozzle velocity, only if the electric force was applied. As the electric field strength increased, $Stk_{50}{^{1/2}}$ was decreased, and its decreasing rate was reduced with increasing the flow velocity. Moreover the existence of electric field was against the cut-off performance of the inertia impactor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계합동학술대회 논문집
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• pp.153-157
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• 2002

This paper deals with the relationships between MgO manufacturing condition and misfiring at low temperature. The characteristics of MgO are affected by substrate temperature and MgO deposition current. In this study. the. substrate temperature was varied from $100^{\circ}C$ to $200^{\circ}C$. And the MgO deposition current was varied from 5mA to 20mA. As a result. the misfiring at low temperature was decreased in the panels with substrate temperature $200^{\circ}C$ and MgO deposition current 5mA. These results may be explained that the higher substrate temperature and lower MgO deposition current makes the denser film formation.

• 대한기계학회논문집B
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• 제21권10호
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• pp.1284-1293
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• 1997

The electrostatic effect on particle deposition onto a heated, Horizontal free-standing wafer surface was investigated numerically. The deposition mechanisms considered were convection, Brownian and turbulent diffusion, sedimentation, thermophoresis and electrostatic force. The electric charge on particle needed to calculate the electrostatic migration velocity induced by the local electric field was assumed to be the Boltzmann equilibrium charge. The electrostatic forces acted upon the particle included the Coulombic, image, dielectrophoretic and dipole-dipole forces based on the assumption that the particle and wafer surface are conducting. The electric potential distribution needed to calculate the local electric field around the wafer was calculated from the Laplace equation. The averaged and local deposition velocities were obtained for a temperature difference of 0-10 K and an applied voltage of 0-1000 v.The numerical results were then compared with those of the present suggested approximate model and the available experimental data. The comparison showed relatively good agreement between them.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.297-300
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• 1997

In this study, The PVDF thin film was fabricated on the one method of dry-process the physical vapor deposition method, applied electric field, and evaporation control in $\beta$-PVDF thin film preparation. A study on the electric-field-phase change of PVDF thin film in physical vapor deposition using the polymer deposition apparatus which are manufactured for oneself. In the analysis of Fourier-Transform Infrared spectra, according to increasing of electric field intensity, the 510$cm^{-1}$ / peak and 1273$cm^{-1}$ / peak which are showed in $\beta$-PVDF increase, on the contrary the 530$cm^{-1}$ / peak and 977$cm^{-1}$ / peak which are showed in $\alpha$-PVDF decrease.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.193-197
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.