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Analysis on particle deposition onto a heated, horizontal free-standing wafer with electrostatic effect

정전효과가 있는 가열 수평웨이퍼로의 입자침착에 관한 해석

  • 유경훈 (한국생산기술연구원 자본재설비기술개발센터 냉동공조연구팀) ;
  • 오명도 (서울시립대학교 정밀기계공학과) ;
  • 명현국 (국민대학교 기계자동차공학부)
  • Published : 1997.10.01

Abstract

The electrostatic effect on particle deposition onto a heated, Horizontal free-standing wafer surface was investigated numerically. The deposition mechanisms considered were convection, Brownian and turbulent diffusion, sedimentation, thermophoresis and electrostatic force. The electric charge on particle needed to calculate the electrostatic migration velocity induced by the local electric field was assumed to be the Boltzmann equilibrium charge. The electrostatic forces acted upon the particle included the Coulombic, image, dielectrophoretic and dipole-dipole forces based on the assumption that the particle and wafer surface are conducting. The electric potential distribution needed to calculate the local electric field around the wafer was calculated from the Laplace equation. The averaged and local deposition velocities were obtained for a temperature difference of 0-10 K and an applied voltage of 0-1000 v.The numerical results were then compared with those of the present suggested approximate model and the available experimental data. The comparison showed relatively good agreement between them.

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