• Journal of Welding and Joining
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• 제32권1호
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• pp.61-65
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• 2014

The purpose of this study is to evaluate the applicability of the element stress to establish S-N design curve for the welded lap joint with thin plates below 2mm thickness. In order to do it, the extensive fatigue tests of the welded lap joints with INVAR alloy were performed. With the results, the deign S-N curves for the lap-weld were established by using the reference stresses such as the nominal stress range at the weld throat area, hot spot stress range and element stress range, and compared with regard to the standard deviation. The standard deviation of S-N curves with element stress range was less than that of S-N curves with other reference stresses. In addition, FEA results show the amount of the element stress is less sensitive to mesh size. Based on the results, it can be concluded that the element stress is to be used as the reference stress for the design S-N curves of the welded lap joint.

• 대한수학회보
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• 제54권5호
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• pp.1669-1675
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• 2017

The group of automorphisms of the first Weyl algebra acts on commuting ordinary differential operators with polynomial coefficient. In this paper we prove that for fixed generic spectral curve of genus two the set of orbits is infinite.

• 대한화학회지
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• 제21권6호
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• pp.395-403
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• 1977

액체이론(Significant Structure Theory)를 단원자 분자로부터 다원자 분자에 이르는 여러 액체혼합물에 적용하여 전 농도 범위에서 액체 혼합물의 활동도 계수를 계산했다. 단원자 분자계(Ar-Kr, Kr-Xe)와 이원자 분자계$(Ar-O_2,\;N_2-CO)$와 메탄-크립톤계의 액체혼합물의 활동도 계수는 ${\delta}E_s$ 수정 변수에 의해 좋은 결과를 얻었다. 아르곤-질소, 산소-질소, 그리고 메탄-프로판계에 대해서는 이 외에 ${\delta}$V, ${\delta}$n 수정 변수가 더 필요했다.

• 한국전기전자재료학회논문지
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• 제31권6호
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• pp.386-391
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• 2018

An epitaxial GaN layer was grown on a cone-shape-patterned sapphire substrate (PSS) (Sample A) and an AlN-buffered PSS (Sample B) with two growth steps under the same process conditions by employing the hydride vapor phase epitaxy (HVPE) method. We have investigated the characteristics of the GaN layer grown on two kinds of substrates at each growth step. The cross-sectional SEM image of the GaN layer grown on the two types of substrates showed growth states of GaN layers formed during the 1st and 2nd growth steps with different growth durations. Dislocation density was obtained by calculation using the FWHM value of the rocking curve for (002) and (102). Sample A showed 2.62+08E and 6.66+08E and sample B exhibited 5.74+07E and 1.65+08E for two different planes. The red shift was observed is photoluminescence (PL) analysis and Raman spectroscopy results. GaN layers grown on AlN-buffered PSS exhibited better optical and crystallographic properties than GaN layers grown on PSS.

• Transactions on Electrical and Electronic Materials
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• 제18권6호
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• pp.311-315
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• 2017

The perovskite system $(Ba^{2+}{_{1-x}}La^{3+}{_x})Fe^{3+}{_{1-t}}Fe^{4+}{_t}O_{3-y}$ (y = (1 - x --t)/2) having a composition of x = 0.0, 0.1, 0.2, and 0.3 showedean increase in $Fe^{4+}$ mole ratios with an increase in oxygen partial pressure ($N_2{\rightarrow}air{\rightarrow}O_2$), and with an increasefin s, the $Fe^{3+}$ quantity decreased and oxygen content (3-y value) increased. For each N sampls heat-treated in $N_2$ gas, a considerable weight gain, i.e.g a steadynincrease if oxygen content, was observed in the TGA data on the cooling process. The conductivity values at a constant temperature were in the order of $N_2$$O_2$; the respective log ${\sigma}$ values (${\Omega}^{-1}{\cdot}cm^{-1}$) at 323 K of the BL0 sample were -5.75 (BL0-N), -3.39 (BL0-A), and -0.53 (BL0-O). The mixed valencies of $Fe^{3+}$ and $Fe^{4+}$ ions in each sample were also confirmed by both the oxidation curve above 350 mV and the cathodic reduction curve below 200 mV from cyclic voltammetry.

• Archives of Pharmacal Research
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• 제19권6호
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• pp.475-479
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• 1996

Diethylcarbamazine (DEC, 1-diethylcarbamyl-4-methylpiperazine) is an antiparasitic piperazine derivative used in the treatment of lymphatic filariasis caused by Wuchereria bancrofti, Brugia malayi or grugia timori. DEC-N-oxide is a major metabolite in humans and has antifilarial activity. In carrying out pharmacokinetic studies, gas chromatographic analysis of DEC in plasma can be complicated by the presence of the metabolite, since the thermally unstable DEC-N-oxide is converted back to a material which coelutes with DEC under the conditions of the analysis. We now report a method to separate DEC-N-oxide from DEC in plasma using solid phase extraction with subsequent gas chromatographic analysis using a nitrogen specific detector. One-diethylcarbamyl-4-ethylpiperazine (E-DEC) was the internal standard. The standard curve of DEC was linear in the range of 10 to 200 ng/ml as described by Y=0.0350+0.0128X, $R^2=0.999$. The limit of quantitation was 4 ng/mL. Reproducibility at 10, 100 and 200 ng/mL concentration points of the standard curve gave coefficient variations of 6.1%, 7.8% and 1.6%, respectively. The recovery following solid phase extraction was 99.3% for DEC and 94.8% for the internal standard. This sensitive and specific analytical method is suitable for pharmacokinetic studies of DEC.

• E2M - 전기 전자와 첨단 소재
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• 제9권3호
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• pp.277-283
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• 1996

The temperature dependent characteristics of hydrogenerated amorphous silcon thin film transistor (a-Si:H TFT) with a bottom gate of N-Type <100> Si wafer were investigated. Drain current on the hysteresis characteristic curve showed an exponential variation. Hysteresis area of TFT increased with the gate voltage increased and decreased with the small gate voltage. According to the variation of gate voltages, drain current of TFT increased by temperature increase, and hysteresis characteristics mainly depended on the temperature increase. The hysteresis current showed negative characteristics curve over 383K. The hysteresis occurance area and the differences of forward and reverse sweep were increased at the higher temperature. Hysteresis current of I$_{d}$(on/off) ratio decreased at the lower temperature and increased at the higher temperature.e.

• Korean Chemical Engineering Research
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• 제58권2호
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• pp.257-265
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• 2020

Densities (ρ) for binary mixtures of ethanol (1) + diisopropyl ether (DIPE) or cyclohexane or alkane (C₆-C₉) (2) were measured at 298.15 K, 308.15 K and 318.15 K. The excess molar volume (V^E_m) of binary mixtures was calculated using ρ data and correlated with Redlich-Kister polynomial equation. The V^E_m values for binary mixtures of ethanol (1) + cyclohexane or n-alkane (C₆-C₉) (2) were positive, whereas for ethanol (1) + DIPE (2) these were negative. The magnitude of V^E_m values follows the order: cyclohexane > n-nonane > n-octane > n-heptane > n-hexane > DIPE. The V^E_m values have been interpreted qualitatively and also quantitatively in terms of Flory-Treszczanowicz-Benson (FTB) model and Prigogine-Flory-Patterson (PFP) theory. The values V^E_m predicted using FTB model agree well with experimental V^E_m values at all mole fractions. But the PFP theory describes well V^E_m data in ethanol-rich region (x₁ > 0.5) for all binary mixtures and is able to predict the sign of V^E_m vs x₁ curve for ethanol-lean region (x₁ < 0.5) except for ethanol (1) + nonane (2) mixtures.

• 동력기계공학회지
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• 제10권2호
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• pp.83-88
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• 2006

Corrosion characterization of Fe-XAl-0.3Y(X=5, 10, 14 wt%) alloys in $0.1{\sim}1N$ sulphuric acid at room temperature was studied using potentiodynamic techniques. The morphology and components of corrosion products on surface of Fe-aluminide alloys were investigated using SEM/EDX, XRD. The potentiodynamic polarization curve of alloys exhibited typical active, passive, transpassive behaviour. Corrosion potential($E_{corr}$) and corrosion current density($I_{corr}$) values of Fe-XAl-0.3Y alloys followed linear rate law. $E_{corr}$ of 10Al alloy and 14Al alloy was ten times lower than 5Al alloy. Icorr of 14Al alloy was five times lower than 5Al alloy. The passive film on the surface of Fe-5Al-0.3Y alloy was formed iron oxide. Fe-10Al-0.3Y and Fe-14Al-0.3Y alloys passive films were aluminium oxide. especially, Fe-14Al-0.3Y alloy showed good corrosion resistance in $0.1{\sim}1N$ sulphuric acid. This is attributed to the forming of protective $Al_2O_3$ oxide on the surface of Fe-14Al-0.3Y alloy.

• E2M - 전기 전자와 첨단 소재
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• 제9권8호
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• pp.799-805
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• 1996

In short channel MOSFET, it is very important to establish optimal process conditions because of variation of device characteristics due to the process parameters. In this paper, we used process simulator and device characteristics caused by process parameter variation. From this simulation, it has been ' derived to the dependence relations between process parameters and device characteristics. The experimental result of fabricated short channel device according to the optimal process parameters demonstrate good device characteristics.