• Journal of Integrative Natural Science
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• v.3 no.2
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• pp.78-83
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• 2010

DBR/Host dual porous silicons containing DBR and host structure were prepared and their optical properties were characterized using Ocean Optics spectrometer. In this dual porous silicon, single porous silicon layer was used as host layer for possible biomolecule and drug materials and DBR porous silicon layer was used for signal transduction due to the recognition of molecules. Optical reflection spectrum of dual porous silicon displayed only DBR reflection but Fabry-Perot fringe pattern. DBR reflection band of dual porous silicon shifted to the shorter wavelength as the etching time of host layer increased. Cross-sectional FE-SEM image of dual porous silicon displayed a thickness of about 20 micrometer for DBR porous silicon layer. Developed etching technology could be useful to prepare DBR porous silicon which exhibited specific reflection resonance at the required wavelength and to provide an label-free biosensors and drug delivery materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.376-377
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• 2013

반도체산업이 발전함에 따라 패턴이 점점 더 복잡해 지고 있다. 이에 따라 웨이퍼 위에 올려지는 layer도 개수도 많아지고 점점 더 두꺼워진다. 예전에는 수백 nm였지만 최근에는 um단위까지 두꺼워지고 있다. 하지만 mask 역할을 하는 ACL과 substrate (SiO2)의 selectivity는 일정하기 때문에 mask 역할을 하는ACL layer 역시 두꺼워지는 것이 불가피하다. 이로인해 예전에는 없었던 문제들이 발생하기 시작한다. Mask 역할을 하는 ACL layer가 얇고 패턴 크기가 클 때에는 아무런 문제도 없었지만 ACL layer도 두꺼워 지고 패턴 크기도 수십 nm로 작아졌기 때문에 ACL 역시 식각 공정을 할 때 어려움이 생기기 시작한다. 이를 해결하기 위한 하나의 방법으로 자화된 ICP 챔버 substrate에 Dual bias frequency 인가하여 식각해 보고 이와같이 하였을 때 식각특성을 분석해 보았다. 자화된 ICP 챔버에서 substrate에 dual bias frequency를 인가함으로써 ion energy와 ion flux에 변화가 생기게 되고 이로 인해 다른 식각 특성이 나타나게 되었다. Dual bias frequency의 비율을 변화시켜 보고 변화에 따른 식각 특성을 분석해 보았다. 이와 같은 과정을 통하여 높은 주파수와 낮은 주파수의 각각의 변화에 따른 식각특성의 변화에 대한 이해를 할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.249-251
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• 2003

This paper discribes the analysis of the breakdown voltage characteristics of SOI LIGBT with dual epi-layer. In case of SOI LIGBT with dual epi-layer, if we used high doping concentration in epi-layer, we obtained higher breakdown voltage compared with typical device because of charge compensation effect, and we obtained low on-state resistivity characteristic in the same breakdown voltage. In this paper, we analyzed on-state and off-state characteristics of SOI LIGBT with dual epi-layer. Breakdown voltage of proposed LIGBT was shown 125V when $T_1=T_2=2.5{\mu}m$, $N_1=7{\times}10^{15}/cm^3$ and $N_2=3{\times}10^{15}/cm^3$, respectively Although we used high doping concentration and thin epi-layer thickness, breakdown voltage was increased compared with conventional devices.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.44-44
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• 1998

• International Journal of Internet, Broadcasting and Communication
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• v.10 no.3
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• pp.81-87
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• 2018

It is common practice to display high-quality video images on the large display among the methods of developing tourist attractions and culture in the region as experience contents differentiation is required. This paper combines the local attractions with the OLED dual layer display system and the extended image implementation and augmented interaction technique to give the experiencer a realistic space, such as directing to new experiences and beautiful sights. In this paper, we added UI layer to additional layers of images to enable users to experience sightseeing information, weather, maps, accommodation, festivals and photo materials with images. It is implemented to add fun through interlocking. We also developed transparent OLED and dual layer panel and 3-channel multi-image playback technique.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.194-197
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• 2002

Applying dual layer insulator on plastic substrates improved electrical characteristics of organic thin film transistor(TFT). A high-quality silicon dioxide(SiO$_2$) suitable for a insulator was deposited on plastic substrates by e-beam evaporation at 110$^{\circ}C$. The insulator film which was treated by N$_2$ annealing at 150$^{\circ}C$ showed excellent I-V, C-V characteristics. The dual layer insulator structure of polyimide-SiO$_2$ improved the roughness of SiO$_2$ surface and showed very low leakage current. In addition, the flat band voltage has been reduced from -2.5V to about 0.5V.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.1
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• pp.127-132
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• 2013

In this paper, we design the physical layer of Guardian modem for wireless public networks. The physical layer is composed of a dual-band RF (Radio Frequency) transceiver and a baseband-processor with quasi-orthogonal codes. The 2.4/5GHz dual-band RF transceiver can overcome the communication difficulty of dense 2.4GHz band for wireless public environment. Also the quasi-orthogonal code can reduce the required ASIC (Application Specific Integrated Circuit) design area. Finally, we analyze the performance of the developed system in viewpoint of data rate, BER (Bit Error Rate), PER (Packet Error Rate). Moreover we verify the performance of the dual-band RF communication.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.113-114
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• 2007

Hole mobility characteristics of single surface channel and dual channel Si/SiGe structure are compared, where the former one consists of a relaxed SiGe buffer layer and a tensile strained Si layer on top, and for dual channel structure a compressively strained SiGe layer is inserted between them. Due to the difference of hole mobility enhancement factors of layers between them, hole mobility characteristics with respect to the Si cap thickness shows the opposite tend. Hole mobility increases with thicker Si cap for single channel structure, whereas it decreases with thicker Si cap for dual channel structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.44-48
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• 2008

Hole mobility characteristics of two representative biaxially strained SiGe/Si structures with high Ge contents are studied, They are single channel ($Si/Si_{1-x}Ge_x/Si$ substrate) and dual channel ($Si/Si_{1-y}Ge_y/Si_{1-x}Ge_x/Si$ substrate), where the former consists of a relaxed SiGe buffer layer with 60 % Ge content and a tensile-strained Si layer on top, and for the latter, a compressively strained SiGe layer is inserted between two layers, Owing to the hole mobility performance between a relaxed SiGe film and a compressive-strained SiGe film in the single channel and the dual channel, the hole mobility behaviors of two structures with respect to the Si cap layer thickness shows the opposite trend, Hole mobility increases with thicker Si cap layer for single channel structure, whereas it decreases with thicker Si cap layer for dual channel. This hole mobility characteristics could be easily explained by a simple capacitance model.

• Geomechanics and Engineering
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• v.32 no.6
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• pp.567-581
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• 2023

Enhanced vertical load capacity of the ground reinforced with the stone columns drew great attention by the researchers as it deals with many of the geotechnical difficulties associated with the weak ground. Recently, it has been found that the stone columns are also prone to fail under the shear load when employed beneath the embankments or the foundations susceptible to lateral loads. In this study, the effect of various encasement conditions on the lateral deflection of stone columns is investigated. A method of dual layers of encasement has been introduced and its the effect on lateral load capacity of the stone columns has been compared with those of the single encased stone column and the un-encased stone columns. Large shear box tests were utilised to generate the shear deformation on the soil system under various normal pressure conditions. The stiffness of the soil-stone column combined system has been compared for various cases of encasement conditions with different diameters. When subjected to lateral deformation, the encased columns outperformed the un-encased stone columns installed in loose sand. Shear stress resistance is up to 1.7 times greater in dual-layered, encased columns than in unencased columns. Similarly, the secant modulus increases as the condition changes from an unencased stone column to single-layer encasement and then to dual-layer encasement, indicating an improvement in the overall soil-stone column system.