• Nuclear Engineering and Technology
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• v.53 no.8
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• pp.2582-2590
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• 2021

The high-energy milling is one of the most extended techniques to produce Oxide dispersion strengthened (ODS) powder steels for nuclear applications. The consequences of the high energy mill process on the final powders can be measured by means of deformation level, size, morphology and alloying degree. In this work, an ODS ferritic steel, Fe-14Cr-5Al-3W-0.4Ti-0.25Y₂O₃-0.6Zr, was fabricated using two different mechanical alloying (MA) conditions (M_std and M_act) and subsequently consolidated by Spark Plasma Sintering (SPS). Milling conditions were set to evidence the effectivity of milling by changing the revolutions per minute (rpm) and dwell milling time. Differences on the particle size distribution as well as on the stored plastic deformation were observed, determining the consolidation ability of the material and the achieved microstructure. Since recrystallization depends on the plastic deformation degree, the composition of each particle and the promoted oxide dispersion, a dual grain size distribution was attained after SPS consolidation. M_act showed the highest areas of ultrafine regions when the material is consolidated at 1100 ℃. Microhardness and small punch tests were used to evaluate the material under room temperature and up to 500 ℃. The produced materials have attained remarkable mechanical properties under high temperature conditions.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.14 no.2
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• pp.169-178
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• 2016

The properties of wastes for melting need to be considered to minimize the maintenance of refractory and to discharge the molten slags smoothly from a plasma torch melter. When the nonflammable wastes from nuclear facilities such as concrete debris, glass, sand, etc., are melted, they become acid slags with low basicity since the chemical composition has much more acid oxides than basic oxides. A molten slag does not have good characteristics of discharge and is mainly responsible for the refractory erosion due to its low liquidity. In case of a stationary plasma torch melter with a slant tapping port on the wall, a fixed amount of molten slags remains inside of tapping hole as well as the melter inside after tapping out. Nonmetallic slags keep the temperature higher than melting point of metal because metallic slags located on the bottom of melter by specific gravity difference are simultaneously melted when dual mode plasma torch operates in transferred mode. In order to minimize the refractory erosion, the compatible refractories are selected considering the temperature inside the melter and the melting behavior of slags whether to contact or noncontact with molten slags. An acidic refractory shall not be installed in adjacent to a basic refractory for the resistibility against corrosion.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.9
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• pp.1614-1618
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• 2007

We have demonstrated the experimental results to obtain the immunity of FN (Fowler Nordheim) stress for S-RCAT (Spherical-Recess Cell Array Transistor) which has been employed to meet the requirements of data retention time and propagation delay time for sub-100-nm mobile DRAM (Dynamic Random Access Memory). Despite of the same S-RCAT structure, the immunity of FN stress of S-RCAT depends on the process condition of gate oxidation. The S-RCAT using DPN (decoupled plasma nitridation) process showed the different degradation of device properties after FN stress. This paper gives the mechanism of FN-stress degradation of S-RCAT and introduces the improved process to suppress the FN-stress degradation of mobile DRAM.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.489.1-489.1
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• 2014

Plasma Enhanced Chemical Vapor Deposition (PECVD) 장치를 통하여 증착된 수소화된 질화막(SiNx:H)은 결정질 태양전지의 반사방지막과 패시베이션 층으로 널리 사용되고 있다. 본 연구에서는 PECVD 장치내에 플라즈마를 형성하는 무선주파수(Radio Frequency)를 다양하게 변화시켜 수소화된 실리콘 질화막의 경향성을 알아보고 각 무선주파수에서 최적화된 패시베이션층을 태양전지에 적용하여 그 특성들을 분석하였다. 다양한 무선주파수 범위는 고주파(High Frequency: 13.56 MHz), 저주파 (Low Frequency: 440 kHZ) 그리고 혼합주파(Dual Frequency: 13.56 MHz + 440 kHz)를 각각 이용하여 수소화된 질화막을 증착 하였으며 $156{\times}156mm$ 대면적 결정질 실리콘 태양전지를 제작하여 비교하였다.

• Macromolecular Research
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• v.10 no.5
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• pp.273-277
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• 2002

Ultra-thin polymer films containing cobalt(II) meso-tetraphenylporphyrin(CoTPP) have been prepared by vacuum codeposition of the metal complex and trans-2-butene as an organic monomer using an inductively coupled RF glow discharge operating at 7-9 Watts. The polymer films were characterized by sorption measurements. Sorption data obtained for polymer films containing CoTPP indicate that the CoTPP molecules are capable of reversibly binding oxygen molecules. It was found that the adjacent CoTPP molecules in the aggregated metal complex phase could irreversibly share the oxygen molecules. A dispersion of the metal complex molecules in the polymer matrix was made to maintain the reversible reactivity of the metal complex molecules with oxygen in the polymer films via vacuum evaporation process. The Henry mode solubility constant, the Langmuir mode capacity constant, the amount of binding oxygen, and the dissociation equilibrium in the dual mode sorption theory were discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1065-1069
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• 2002

The addressing time should be reduced by modifying cell structure and/or driving method in order to replace the dual scan system by single scan and increase the luminance in large ac plasma display panel(PDP). In this paper, the effects of the addressing time was decreased with decreasing thickness of dielectric layer on the front glass and thickness of white dielectric layer on the rear glass. the decreasing rate were 160ns/10$\mu\textrm{m}$ and 270ns/10$\mu\textrm{m}$, respectively Also in case of decreasing the height of barrier rib, addressing time was decreased at the rate of Sons/10$\mu\textrm{m}$.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1827-1829
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• 2000

To replace the dual scan system by single scan in large ac plasma display(PDP), the addressing time should be reduced by modifying cell structure and driving circuits. Moreover. the luminance of the PDP can be also increased with the decrease in the addressing time. In this paper, various shapes of bus and address electrode have been investigated to reduce the addressing time in ADS driving method. The experimental results show that the addressing time can be reduced more than 30% compared to the conventional type by modifying the electrodes without reducing the luminance of the PDP.

• Journal of Power Electronics
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• v.6 no.3
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• pp.205-213
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• 2006

A cost-effective magnetic-coupled AC-PDP sustain driver with low switching loss is proposed. The transformer reduces current stress in the energy recovery switches which affects circuit cost and reliability. The turns-ratio can be used to adjust the sustain pulse slopes which affect gas discharge uniformity. Dividing the recovery paths prevents abrupt changes in the output capacitance and thereby switching losses of the recovery switches is reduced. In addition, the proposed circuit has a more simple structure because it does not use the recovery path diodes which also afford a large recovery current. By reducing the current stress and device count in the energy recovery circuit, the proposed driver may have decreased circuit cost and improved circuit reliability.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.132-133
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• 2007

2개의 주파수가 인가된 유도결합 플라즈마(ICP)를 이용하여 주파수 조합(13.56 or 27.12/2MHz)과 안테나의 캐패시턴스 변화에 따른 $SiO_2$ 와 poly-Si 의 식각특성을 연구하였다. 본 실험의 결과로, 27.12 MHz에서 plasma density가 높다는 것과 13.56 MHz에서 center high profile이 쉽게 형성됨을 알 수 있었다. $SiO_2$ 식각에서는 non-uniformity와 etch rate모두 27.12 MHz가 13.56 MHz보다 높다는 것을 알 수 있었고, poly-Si 식각에서는 non-uniformity와 etch rate모두 비슷한 경향을 나타낸다는 것을 알 수 있었다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.250-251
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• 2009

For the fabrication of a multilevel resist (MLR) based on a very thin amorphous carbon (a-C) layer an $Si_{3}N_{4}$ hard-mask layer, the selective etching of the $Si_{3}N_{4}$ layer using physical-vapor-deposited (PVD) a-C mask was investigated in a dual-frequency superimposed capacitively coupled plasma etcher by varying the following process parameters in $CH_{2}F_{2}/H_{2}/Ar$ plasmas : HF/LF powr ratio ($P_{HF}/P_{LF}$), and $CH_{2}F_{2}$ and $H_2$ flow rates. It was found that infinitely high etch selectivities of the $Si_{3}N_{4}$ layers to the PVD a-C on both the blanket and patterned wafers could be obtained for certain gas flow conditions. The $H_2$ and $CH_{2}F_{2}$ flow ratio was found to play a critical role in determining the process window for infinite $Si_{3}N_{4}$/PVDa-C etch selectivity, due to the change in the degree of polymerization. Etching of ArF PR/BARC/$SiO_x$/PVDa-C/$Si_{3}N_{4}$ MLR structure supported the possibility of using a very thin PVD a-C layer as an etch-mask layer for the $Si_{3}N_{4}$ layer.