• Proceedings of the Korean Geotechical Society Conference
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• 2001.10a
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• pp.147-158
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• 2001

In general, two methods have been used to predict settlement of soft ground. One method is Terzaghi's one dimensional consolidation theory which gives time-settlement relationship using the standard consolidation test results. The other is forecasting method of ground settlement to be occured in the future using in-situ monitoring data. The above both methods have some defects in application manner or in itself especially in very deep and soft clayey ground. In view of the lessons and experiences of soft ground improvement projects, several techniques were proposed for more accurate theorectical calculation of consolidation settlement as follows ; ① Subdivision of soft ground, ② Consideration of secondary compression, ③ Using the modified compression index, etc. And also, revised hyperbolic fitting method was suggested to minimize the error of predicted future settlement. In addition, revised De-Beer equation of immediate settlement of loose sandy soil was proposed to overcome the tendency to show too small settlement calculation results by original De-Deer equation. And also, considering the various effects of settlement delay in the improved ground by vertical drains, time-settlement caculation equation(Onoue method) was revised to match the tendency of settlement delay by using the characteristics of discharge capacity decreases of vertical drain with time elapse by the pattern of hyperbolic equation.

• Steel and Composite Structures
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• v.2 no.2
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• pp.147-160
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• 2002

This paper summarises results of the research performed at the Department of Steel Structures and Structural Mechanics from the "Politehnica" University of Timisoara, Romania, in order to evaluate the performance of beam-to-column extended end plate connections for steel and composite joints. It comprises laboratory tests on steel and composite joints, and numerical modelling of joints, based on tests. Tested joints are double-sided, with structural elements realised of welded steel sections. The columns are of cruciform cross-section, while the beams are of I section. Both monotonic and cyclic loading, symmetrically and antisymmetrically, has been applied. On the basis of tested joints, a refined computer model has been calibrated using a special connection element of the computer code DRAIN 2DX. In this way, a static/dynamic structural analysis of framed structures with real characteristics of the beam to column joints is possible.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.6
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• pp.487-490
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• 2007

In this paper, the formation and thermal stability characteristics of Ni silicide using Ni-V alloy on Boron cluster ($B_{18}H_{22}$) implanted bulk and SOI substrate were examined in comparison with pure Ni for nano-scale CMOSFET. The Ni silicide using Ni-V alloy on $B_{18}H_{22}$ implanted SOI substrate after high temperature post-silicidation annealing showed the lower sheet resistance, no agglomeration interface image and lower surface roughness than that using pure Ni. The thermal stability of Ni silicide was improved by using Ni-V alloy on $B_{18}H_{22}$ implanted SOI substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.395-395
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• 2007

We report on the fabrication of soluble pentacene-based thin-film transistors (TFTs) that consist of $NiO_x$, poly-vinyl phenol (PVP), and Ni for the source-drain (SID) electrodes, gate dielectric, and gate electrode, respectively. The $NiO_x$ SID electrodes of which the work function is well matched to that of soluble pentacene are deposited on a soluble pentacenechannel by sputter deposited of NiO powder and show a moderately low but still effective transmittance of ~65% in the visible range along with a good sheet resistance of ${\sim}40{\Omega}/{\square}$. The maximum saturation current of our soluble pentacene-based TFT is about $15{\mu}A$ at a gate bias of -40showing a high field effect mobility of $0.06cm^2/Vs$ in the dark, and the on/off current ratio of our TFT is about $10^4$. It is concluded that jointly adopting $NiO_x$ for the S/D electrodes and PVP for gate dielectric realizes a high-quality soluble pentacene-based TFT.

• Journal of IKEEE
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• v.25 no.1
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• pp.15-24
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• 2021

In this paper, 1700 V EPDT (Extended P+ shielding floating gate Double Trench) MOSFET structure, which has a smaller switching time and loss than CDT (Conventional Double Trench) MOSFET, is proposed. The proposed EPDT MOSFET structure extended the P+ shielding area of the source trench in the CDT MOSFET structure and divided the gate into N+ and floating P- polysilicon gate. By comparing the two structures through Sentaurus TCAD simulation, the on-resistance was almost unchanged, but Crss (Gate-Drain Capacitance) decreased by 32.54 % and 65.5 %, when 0 V and 7 V was applied to the gate respectively. Therefore, the switching time and loss were reduced by 45 %, 32.6 % respectively, which shows that switching performance was greatly improved.

• Journal of Environmental Science International
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• v.33 no.7
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• pp.523-532
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• 2024

In popular tourist destinations such as Jeju and Gangwon, electric rental cars are increasingly adopted. However, sudden battery drain due to weather conditions can pose safety issues. To address this, we developed a battery consumption analysis model that considers resistive energy factors such as acceleration, rolling resistance, and aerodynamic drag. Focusing on the effects of ambient temperature and wind speed, the model's performance was evaluated during an empirical validation period from November to December 2023. Comparing predicted and actual state of charge (SoC) across different routes identified ambient temperature, wind speed, and driving time as major sources of error. The mean absolute error (MAE) increased with lower temperatures due to reduced battery efficiency. Higher wind speeds on routes 1 and 6 resulted in larger errors, indicating the model's limitation in considering only tailwinds for aerodynamic drag calculations. Additionally, longer driving times led to higher actual SoC than predicted, suggesting the need to account for varying driver habits influenced by road conditions. Our model, providing more accurate SoC predictions to prevent battery depletion incidents, shows high potential for application in navigation apps for electric vehicle users in tourist areas. Future research should endeavor to the model by including wind direction, HVAC system usage, and braking frequency to improve prediction accuracy further.

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.19-23
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• 2007

The NiSi is very promising candidate for the metallization in 45 nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25\;{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5\;{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process temperature window for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5\;{\Omega}/{\square}$ and $3\;{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

• Journal of Chest Surgery
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• v.33 no.6
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• pp.445-468
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• 2000

Background: Retrograde cerebral perfusion(RCP) is currently used for brain protection during aorta surgery, however, for the safety of it, various data published so far are insufficient. We performed RCP using pig and investiaged various parameters of cerebral metabolism and brain injury after RCP under deep hypothermia. Material and Method: We used two experimental groups: in group I(7 pigs, 20 kg), we performed RCP for 120 minutes and in group II (5 pigs, 20 kg), we did it for 90 minutes. Nasopharyngeal temperature, jugular venous oxygen saturation, electroencephalogram were continuously monitored, and we checked the parameters of cerebral metabolism, histological changes and serum levels of neuron-specific enolose(NSE) and lactic dehydrogenase(LDH). Central venous pressure during RCP was mainained in the range of 25 to 30 mmHg. Result: Perfusion flow rates(ml/min) during RCP were 130$\pm$57.7(30 minutes), 108.6$\pm$55.2(60 minutes), 107.1$\pm$58.8(90 minutes), 98.6$\pm$58.7(120 minutes) in group I and 72$\pm$11.0(30 minutes), 72$\pm$11.0(60 minutes), 74$\pm$11.4(90 minutes) in group II. The ratios of drain flow to perfusion flow were 0.18(30 minutes), 0.19(60 minutes), 0.17(90 minutes), 0.16(120 minutes) in group I and 0.21, 0.20, 0.17 in group II. Oxygen consumptions(ml/min) during RCP were 1.80$\pm$1.37(30 minutes), 1.72$\pm$1.23(60 minutes), 1.38$\pm$0.82(90 minutes), 1.18$\pm$0.67(120 minutes) in group I and 1.56$\pm$0.28(30 minutes), 1.25$\pm$0.28(60 minutes), 1.13$\pm$0.26(90 minutes). We could observe an decreasing tendency of oxygen consumption after 90 minutes of RCP in group I. Cerebrovascular resistance(dynes.sec.cm-5) during RCP in group I incrased from 71370.9$\pm$369145.5 to 83920.9$\pm$49949.0 after the time frame of 90 minutes(p<0.05). Lactate(mg/min) appeared after 30 minutes of RCP and the levels were 0.15$\pm$0.07(30 minutes), 0.18$\pm$0.10(60 minutes), 0.19$\pm$0.19(90 minutes), 0.18$\pm$0.10(120 minutes) in group I and 0.13$\pm$0.09(30 minutes), 0.19$\pm$0.03(60 minutes), 0.29$\pm$0.11(90 minutes) in group II. Glucose utilization, exudation of carbon dioxide, differences of cerebral tissue acidosis between perfusion blood and drain blood were maintained constantly during RCP. Oxygen saturation levels(%) in drain blood during RCP were 22.9$\pm$4.4(30 minutes), 19.2$\pm$4.5(60 minutes), 17.7$\pm$2.8(90 minutes), 14.9$\pm$2.8(120 minutes) in group I and 21.3$\pm$8.6(30 minutes), 20.8$\pm$17.6(60 minutes), 21.1$\pm$12.1(90 minutes) in group II. There were no significant changes in cerebral metabolic parameters between two groups. Differences in serum levels of NSE and LDH between perfusion blood and drain blood during RCP showed no statistical significance. Serum levels of NSE and LDH after resuming of cardipulmonary bypass decreased to the level before RCP. Brain water contents were 0.73$\pm$0.03 in group I and 0.69$\pm$0.06 in group II and were higher than those of the controls(p<0.05). The light microscopic findings of cerebral neocortex, basal ganglia, hippocampus(CA1 region) and cerebellum showed no evidence of cerebral injury in two groups and there were no different electron microscopy in both groups(neocortex, basal ganglia and hippocampus), but they were thought to be reversible findings. Conclusion: Although we did not proceed this study after survival of pigs, we could perform the RCP successfully for 120 minutes with minimal cerebral metabolism and no evidence of irreversible brain damage. The results of NSE and LDH during and after RCP should be reevaluated with survival data.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1064-1073
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• 2013

In this paper, a compact 370 W high efficiency GaN(Gallium Nitride) HEMT(High Electron Mobility Transistor) power amplifier(PA) using internal harmonic manipulation circuits is presented for cellular and L-band. We employed a new circuit topology for simultaneous high efficiency matching at both fundamental and 2nd harmonic frequency. In order to minimize package size, new 41.8 mm GaN HEMT and two MOS(Metal Oxide Semiconductor) capacitors are internally matched and combined package size $10.16{\times}10.16{\times}1.5Tmm^3$ through package material changes and wire bonded in a new package to improve thermal resistance. When drain biased at 48 V, the developed GaN HEMT power amplifier has achieved over 80 % Drain Efficiency(DE) from 770~870 MHz and 75 % DE at 1,805~1,880 MHz with 370 W peak output power(Psat.). This is the state-of-the-art efficiency and output power of GaN HEMT power amplifier at cellular and L-band to the best of our knowledge.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.95-102
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• 2001

Nano-scale gate length MOSFET devices require extremely shallow source/drain eftension region with junction depth of 20∼30nm. In this work, 20nm $n^{+}$-p junctions that are realized by using this $As_{2}^{+}$ low energy ($\leq$10keV) implantation show the lower sheet resistance of the $1.0k\Omega$/$\square$ after rapid thermal annealing process. The $As_{2}^{+}$ implantation and RTA process make it possible to fabricate the nano-scale NMOSFET of gate length of 70nm. $As_{2}^{+}$ 5 keV NMOSFET shows a small threshold voltage roll-off of 60mV and a DIBL effect of 87.2mV at 100nm gate length devices. The electrical characteristics of the fabricated devices with the heavily doped and abrupt $n^{+}$-p junctions ($N_{D}$〉$10^{20}$$cm^{-3}$, $X_{j}$$\leq$20nm) suggest the feasibility of the nano-scale NMOSFET device fabrication using the $As_{2}^{+}$ low energy ion implantation.