• International Journal of Contents
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• v.7 no.2
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• pp.59-63
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• 2011

The aim of our study was to evaluate the immediate effects of an 830-nm Aluminium gallium arsenide (GaAlAs) laser, by examining the changes, in pressure-pain threshold (PPT) and tenderness at 3 kg of the myofascial trigger point (MTrP) of the upper trapezius muscle in visual display terminal (VDT) workers in comparison with placebo treatment. Thirty VDT workers (13 males, 17 females) with complaints of upper trapezius muscle were recruited. All participants were given either active GaAlAs laser (830 nm wavelength, 450 mW, 9 J at point) or placebo GaAlAs laser, according to the double-blinded and placebo-controlled trial. Both active and placebo low-level laser therapy (LLLT) treatments showed no significant effect on PPT and tenderness at 3 kg. These results suggest that a higher dosage may be necessary to produce immediate effects when applying LLLT to the MTrP of relatively large muscles such as the upper trapezius muscle.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.1
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• pp.43-51
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• 1998

In this paper, the performance about the CDMA inital synchronization under the Rician fading channel, which is actively studied as a CAI for IMT2000(FPLMTS) is analyzed. Through the performance analysis with the double dwell serial search code acquisition, the minimum mean initial synchronization acquisition time vs signal detection threshold value and first dwell duration time respectively with parameters of false alarm probability, detection probability and test PN chips is presented and the results show the mean initial synchronization acquisition time is increased with lower slope than Rayleigh fading as the threshold value of the initial synchronization acquisition decision is increased.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.887-890
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• 2005

The double gate(DG) MOSFET is a promising candidate to further extend the CMOS scaling and provide better control of short channel effect(SCE). DGMOSFETs, having ultra thin updoped Si channel for SCEs control, are being validated for sub-20nm scaling, A channel effects such as the subthreshold swing(SS), and the threshold voltage roll-off(${\Delta}V_{th}$). The propsed model includes the effects of thermionic emission and quantum tunneling of carriers through the source-drain barrier. The proposed model is used to design contours for gate length, channel thickness, and gate oxide thickness.

• Journal of Broadcast Engineering
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• v.5 no.1
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• pp.123-129
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• 2000

This paper addresses a new double detection algorithm which is based on the fuzzy control in the adaptive echo canceller of communication system. In this method, the two input of the fuzzy inference for detecting double talk condition are used. The one is the cross-correlation coefficient between the error signal and the primary signal which is the summed signal of the real echo signal and the near-end signal. The other is the cross-correlation coefficient between the estimation error signal and the primary signal. The fuzzy controller made a fuzzification for two inputs by the membership functions of trapezoid and them became the composition using inference rules. The composed result is defuzzificated by the center gravity method. The output is compared with two threshold values to detect double talk and echo path variation effectively. It is confirmed by computer simulation that this fuzzy double talk detector is able to track echo path variation accurately.

• Proceedings of the IEEK Conference
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• 2003.07c
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• pp.2729-2732
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• 2003

This paper proposes a real-time method to recognize shoulder elevation motions by comparing EMG signals on the Levator scapulae muscles with double threshold values. To achieve real-time, we implement a EMG signal processing hareware embedded band-rejection filter, low-pass filter, full rectifier and moving average circuits. And a high speed microprocessor is used for implementing the double thresholds method. The available shoulder motions for the human-computer interface are elevation of left, right and both shoulders. From experimental results we show that the proposed real-time processing hardware and double thresholds method are useful for the real-time EMG-based human-computer interface.

• Convergence Security Journal
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• v.14 no.2
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• pp.65-72
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• 2014

This paper proposes multi-filtering method on the double firewall to prevent DDoS attack. In the first firewall, R-PA filtering algorithm and rigid hop counter filtering method are applied by analyzing packet paths. In the second firewall, packets are examined to be distinguished abnormal from normal packets. Security policy system monitors each user sessions and if the traffic is over the threshold value, the system blocks that session for an assigned time.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.647-654
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• 2013

The design and analysis of analog circuit application on CMOS technology are a challenge in deep sub-micrometer process. This paper is a study on the performance value of Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with Gate Stack and the channel engineering Single Halo (SH), Double Halo (DH). Four different structures have been analysed keeping channel length constant. The short channel parameters and different sub-threshold analog figures of merit (FOMs) are analysed. This work extensively provides the device structures which may be applicable for high speed switching and low power consumption application.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1549-1551
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• 2002

현재 게이트 길이가 100nm 이하의 MOSFET 소자를 구현할 때 가장 대두되는 문제인 short channel effect를 억제하는 방법으로 제안된 소자 중 하나가 double gate (DG) silicon-on-insulator (SOI) MOSFET이다. 그러나 DG SOI MOSFET는 두 게이트간의 align과 threshold voltage control 문제가 있다. 본 논문에서는 DG SOI MOSFET에서 이상적으로 게이트가 align된 구조와 back 게이트가 front 게이트보다 긴 non-align된 구조가 subthreshold 동작 영역에서 impact ionization에 미치는 영향에 대해 시뮬레이션을 통하여 비교 분석하였다. 그 결과 게이트가 이상적으로 align된 구조보다 back 게이트가 front 게이트보다 긴 non-align된 구조가 게이트와 드레인이 overlap된 영역에서 impact ionization이 증가하였으며 게이트가 각각 n+ 폴리실리콘과 p+ 폴리실리콘을 가진 소자에서 두 게이트가 같은 work function을 가진 소자보다 높은 impact generation rate을 가짐을 알 수 있었다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.773-779
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• 1986

In this paper, we discuss fabrication and characteristics of the Vertical Double diffused MOS(VDMOS) transistor. The epi layers of starting wafers are 18~22\ulcorner in thickness and 8~12\ulcornercm in resistivity. The channel regions are defined through the self-aligned double diffusion process. The characteristics of the fabricated VDMOS are breakdown voltage of 240V, threshold voltage of 2V, on-resistance of 226\ulcornerand transconductance of 3x10**-3 mho.

• Korean Journal of Materials Research
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• v.21 no.9
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• pp.477-481
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• 2011

Composites of insulating polyethylene and carbon black are widely used in switching elements, conductive paint, and other applications due to the large gap of resistance value. This research addresses the critical exponent of dielectric breakdown strength of polymer matrix composites (PMC) made with carbon black and polyethylene below the percolation threshold (Pt) for the first time. Here, Pt means the volume fraction of carbon black of which the resistance of the PMC is transferred from its sharp decrease to gradual decrease in accordance with the increase of carbon-black-filled content. First, the Pt is determined based on the critical exponents of resistivity and relative permittivity. Although huge cohesive bodies of carbon black are formed in case of being less than the Pt, a percolation path connecting the conducting phases is not formed. The dielectric breakdown strength (Dbs) of the PMC below Pt is measured by using an impulse voltage in the range from 10 kV to 40 kV to avoid the effect of joule heating. Although the observed Dbs data seems to be well fitted to a straight line with a slope of 0.9 on a double logarithm of (Pt-$V_{CB}$) and Dbs, the least squares method gives a slope of 0.97 for the PMC. It has been found that finite carbon-black clusters play an important role in dielectric breakdown.