• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.1
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• pp.145-150
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• 2013

This paper has presented the analysis for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET as next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function has been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold characteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering are changed, and the deviation rate is changed for device parameters for DGMOSFET.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.691-694
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• 2003

Density gradient method is used to analyze the quantum effect in MOSFET, Quantization effect in the poly gate leads to a negative threshold voltage shift, which is opposed to the positive shift caused by quantization effect in the channel. Quantization effects in the poly gate are investigated using the density gradient method, and the impact on the short channel effect of double gate device is more significant.

• Journal of the Korean Institute of Intelligent Systems
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• v.24 no.6
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• pp.628-633
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• 2014

This paper proposes a performance improvement method of the conventional double talk detection method which can operate before convergence of the echo canceller. The proposed method estimates the coefficients of the linear predictive coding(LPC) filter by using the primary input signal. The time-varying threshold for double talk detection is determined based on the LPC filter gain of the primary input signal level. The proposed method can reduce not only false detection rate which means wrong detection of single talk as double talk but also double talk detection delay. Computer simulation was performed using a long-term real speech signals. It is shown that the proposed method improves the conventional method in terms of lowering the false detection rate and shortening the detection delay.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.2
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• pp.76-81
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• 2007

Threshold voltage ($V_{th}$) modeling of doublegate (DG) MOSFETs was performed, for the first time, by considering barrier lowering in the short channel devices. As the gate length of DG MOSFETs scales down, the overlapped charge-sharing length ($x_h$) in the channel which is related to the barrier lowering becomes very important. A fitting parameter ${\delta}_w$ was introduced semi-empirically with the fin body width and body doping concentration for higher accuracy. The $V_{th}$ model predicted well the $V_{th}$ behavior with fin body thickness, body doping concentration, and gate length. Our compact model makes an accurate $V_{th}$ prediction of DG devices with the gate length up to 20-nm.

• Journal of electromagnetic engineering and science
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• v.10 no.4
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• pp.270-275
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• 2010

In a conventional opportunistic transmit (COT) cooperative relaying system, only the relays that receive signal-to-noise ratio (SNR) from the source and that exceed the threshold transmit to the destination. The COT system, however, only considers the SNR of the source-relay (S-R) path regardless that the SNR of the relay-destination (R-D) path is the opportunistic transmission condition. For that reason, it is not guaranteed that all the transmitted signals from relays exceed the threshold at the destination. Therefore we propose a double opportunistic transmit (DOT) cooperative relaying system - when both of the received SNR from a source and from a destination exceed the threshold, the relay transmits to the destination. It is shown that the proposed DOT system reduces power consumption by 6.9, 20.9, 32.4, and 41.4 % for K =3, 5, 7, and 9, respectively under the given condition of $P_{out}=1{\times}10^{-3}$ and $\overline{\gamma}_{SR}/\Gamma_{SR}$=30 dB, compared to the COT system. We noticed that the performance of the DOT system is superior to that of the COT system for the identical number of active transmit relays under the same condition of the normalized average SNR of $\overline{\gamma}_{RD}/\Gamma_{RD}$.

• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1486-1494
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• 2018

Based on the semiclassical theory of chaotic scattering, Tanner et al. [J. Phys. B 40, F157 (2007)] proposed the fluctuation in the partial photoionization cross section of helium below the double-ionization threshold would show the same characteristics as in the total cross section, predicting that the Fourier spectrum of the fluctuation reveals peaks at the classical actions of closed triple collision orbits and the amplitude of the fluctuation decreases algebraically as the energy approaches the double-ionization threshold. In that paper, however, the predictions were not clearly confirmed due to the lack of experimental data with sufficient accuracy. So instead, we calculate the partial photoionization cross sections of collinear eZe helium for the energy range from the single-ionization threshold $I_{20}$ to $I_{32}$ in order to numerically confirm the predictions. Analysis of the fluctuation in the partial cross section shows that the predictions are indeed valid. Our findings mean that the fluctuation in the partial photoionization cross section can be described by classical triple collision orbits in the semiclassical limit. Thus it explains in a natural way the mirroring and mimicking structures observed in cross section signals for different ionization channels.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.683-685
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• 2012

This paper have presented the analysis of the change for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET with two gates to be next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold chatacteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering is changed, and the deviation rate is changed for device parameters for DGMOSFET.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1248-1251
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• 1995

This paper reports some results of an experimental investigation of planar double injection magnetic sensors. The threshold voltage proved to be very sensitive to an applied magnetic field. The magnitude and direction of the threshold voltage variation depends on the field strength and its orientation with respect to the conduction chennel. The positively-directed field pushes the carriers into the bulk causing an increase in the threhold voltage. These results seem to agree with a path modulation due to Lorentz force. The application of a negative field causes a negative variation, which is dependent on the surface recombination velocity of the silicon-$SiO_2$ interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.14-15
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• 2009

Insulated Gate Bipolar Transistor(IGBTs) are widely used in power device industry. However, to improve the breakdown voltage, IGBTs are suffered from increasing on-state voltage drop due to structural design. In this paper, the new structure is proposed to solve this problem. The proposed structure has double p-floating layer inserted in n-drift layer. The p-floating layers improve the breakdown voltage compared to conventional IGBT without change of other electrical characteristics such as on-state voltage drop and threshold voltage. this is because the p-floating layers expand electric field distribution at blocking state. A electrical characteristic of proposed structure is analyzed by using simulators such as TSUPREM and MEDICI. As a result, on-state voltage drop and threshold voltage are same to a conventional TIGBT, but breakdown voltage is improved to 16%.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.4
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• pp.72-75
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• 1985

1.3$\mu$m double-heterostructure GaInAsP/InP wafers have been grown by LPE and broad contact laser diodes have been fabricated. Electrical and optical characteristics of these lasers under pulsed lasing operation at room temperature are described. Typical threshold currents are below 2 Amp. corresponding to threshold current densities of 3 - 6 KAmp./$\textrm{cm}^2$ and peak lasing wavelength is shown to be at 1.315 $\mu$m.