대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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폴리게이트의 양자 효과에 따른 Double-Gate MOSFET의 단채널 효과 분석

Analysis of Short-Channel Effect due to the 2D QM effect in the poly gate of Double-Gate MOSFETs

  • 박지선 (이화여자대학교 정보통신학과) ;
  • 신형순 (이화여자대학교 정보통신학과)
  • 발행 : 2003.07.01
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초록

Density gradient method is used to analyze the quantum effect in MOSFET, Quantization effect in the poly gate leads to a negative threshold voltage shift, which is opposed to the positive shift caused by quantization effect in the channel. Quantization effects in the poly gate are investigated using the density gradient method, and the impact on the short channel effect of double gate device is more significant.

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