• 제목/요약/키워드: double dielectric layer

검색결과 73건 처리시간 0.022초

$SiO_2/Si_3N_4$ 2중층 박막의 유전특성 (Dielectric Characteristics of $SiO_2/Si_3N_4$ Double Layer)

  • 고길영;김균식;홍능표;변두균;이충호;홍진웅
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 하계학술대회 논문집 C
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    • pp.1526-1528
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    • 2003
  • 본 연구에서는 P-type Si wafer에 1000[$^{\circ}C$]의 조건에서 열산화방식으로 성장시킨 산화막($SiO_2$) 두께 3000[${\AA}$] 그 위에 APCVD방법으로 형성시킨 질화막($Si_3N_4$)의 두께 500[${\AA}$], 1500[${\AA}$]인 시료에 대하여 전기적 특징 중 유전정접 특성에 관하여 조사하였다. [1] 또한 각각의 두께에 대하여 측정 온도범위 상온${\sim}150[^{\circ}C]$ 와 인가전압 범위 1[V]${\sim}$20[V]에서 유전정접의 주파수 의존성과 온도 의존특성을 조사하고 특히 정전용량 변화에 따른 유전특성에 대하여 조사하고 변환기 소자재료 개발을 위한 기초물성을 실험한 결과를 보고한다.

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유동대전에 의한 정전기 특성 분석 (Analysis of Characteristics on the Static Electricity by Streaming Electrification)

  • 김길태;이재근
    • 한국안전학회지
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    • 제20권3호
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    • pp.42-46
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    • 2005
  • The static electricity by thinner flow and discharge energy is investigated experimentally for the purpose of preventing the electrostatic discharge and damage. Test system for evaluating streaming electrification consists of a teflon pipe, a reservoir tank a pump, flowmeters and an electrometer. When dielectric liquid flows through a pipe from one vessel to another, the potential difference generated in the collecting vessel is due to the accumulation of charges. These charges result from the convection of a part of the electrical double layer existing in the tube at the contact between the liquid and the inner wall. When the fluid velocity increases, the electric current increases proportionally. The charging current and accumulated charges by streaming electrification at the thinner velocity of 40cm/s are measured a range of 5 nA and $0.27{\mu}C$ respectively. This amount of static discharge energy generated by streaming electrification is enough to ignite flammable solvent. Therefore surface electric potential should decrease by using electrostatic shielding and ground.

Copper Phthalocyanine Field-effect Transistor Analysis using an Maxwell-wagner Model

  • Lee, Ho-Shik;Yang, Seung-Ho;Park, Yong-Pil;Lim, Eun-Ju;Iwamoto, Mitsumasa
    • Transactions on Electrical and Electronic Materials
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    • 제8권3호
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    • pp.139-142
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    • 2007
  • Organic field-effect transistor (FET) based on a copper Phthalocyanine (CuPc) material as an active layer and a $SiO_2$ as a gate insulator were fabricated and analyzed. We measured the typical FET characteristics of CuPc in air. The electrical characteristics of the CuPc FET device were analyzed by a Maxwell-Wagner model. The Maxwell-Wagner model employed in analyzing double-layer dielectric system was helpful to explain the C-V and I-V characteristics of the FET device. In order to further clarity the channel formation of the CuPc FET, optical second harmonic generation (SHG) measurement was also employed. Interestingly, SHG modulation was not observed for the CuPc FET. This result indicates that the accumulation of charge from bulk CuPc makes a significant contribution.

BCB를 이용한 High & Low$Z_0$전송선로 제작에 대한 연구 (Studies on the fabrication of transmission line with high and low $Z_0$ using BCB layer)

  • 한효종;이성대;전영훈;윤관기;김삼동;황인석;이진구;류기현
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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    • pp.57-60
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    • 2002
  • In this paper, transmission lines with low and high characteristic impedance (Z$_{0}$) are fabricated and analyzed. The transmission lines are fabricated on the benzo-cyclo-butene (BCB) films of a low dielectric constant. For the low Z$_{0}$, two types of coplanar waveguide (CPW) structures are fabricated, which include bottom-ground and double-ground type. Measurement shows that Z$_{0}$ values for each CPW type are 7.3 and 9.4$\Omega$, respectively, at a signal line width of 100 #m. Whit the ratio between the spacing of bottom-ground and the signal line with becomes greater than 2.5, the Z$_{0}$ is nearly saturated. In addition, thin film microstrip lines fabricated using the BCB insertion layers show very low Z$_{0}$ of 25.5$\Omega$, and this impedance is ~64 % of the values obtained from the BCB-based CPW structures of the same line width. Measurement result of CPW on BCB layer is 100.5 Ω.s 100.5 Ω.

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WiFi용 스위치 칩 내장형 기판 기술에 관한 연구 (The Fabrication and Characterization of Embedded Switch Chip in Board for WiFi Application)

  • 박세훈;유종인;김준철;윤제현;강남기;박종철
    • 마이크로전자및패키징학회지
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    • 제15권3호
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    • pp.53-58
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    • 2008
  • 본 연구에서는 상용화된 2.4 GHz 영역대에서 사용되어지는 WiFi용 DPDT(Double Pole Double throw) switch 칩을 laser 비아 가공과 도금 공정을 이용하여 폴리머 기판내에 내장시켜 그 특성을 분석하였으며 통상적으로 실장되는 wire 본딩방식으로 패키징된 기판과 특성차이를 분석 비교하였다. 폴리머는 FR4기판과 아지노 모토사의 ABF(Ajinomoto build up film)를 이용하여 패턴도금법으로 회로를 형성하였다. ABF공정의 최적화를 위해 폴리머의 경화정토를 DSC (Differenntial Scanning Calorimetry) 및 SEM (Scanning Electron microscope)으로 분석하여 경화도에 따라 도금된 구리패턴과의 접착력을 평가하였다. ABF의 가경화도가 $80\sim90%$일 경우 구리층과 최적의 접착강도를 보였으며 진공 열압착공정을 통해 기공(void)없이 칩을 내장할 수 있었다. 내장된 기관과 와이어 본딩된 기판의 측정은 S 파라미터를 이용하여 삽입손실과 반사손실을 비교 분석하였으며 그 결과 삽입손실은 두 경우 유사하게 나타났지만 반사손실의 경우 칩이 내장된 경우 6 GHz 까지 -25 dB 이하로 안정적으로 나오는 것을 확인할 수 있었다.

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비정질실리콘 박막 트랜지스터 (Hydrogenated a-Si TFT Using Ferroelectrics)

  • 허창우
    • 한국정보통신학회논문지
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    • 제9권3호
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    • pp.576-581
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    • 2005
  • 강유전체$(SrTiO_3)$ 박막을 게이트 절연층으로 하여 수소화 된 비정질 실리콘 박막 트랜지스터를 유리 기판 위에 제조하였다. 강유전체는 기존의 $SiO_2,\;SiN$ 등과 같은 게이트 절연체에 비하여 유전특성이 매우 뛰어나 TFT의 ON 전류를 증가시키고 문턱전압을 낮추며 항복특성을 개선하여 준다. PECVD에 의하여 증착된 a-Si:H는 FTIR 측정 결과 $2,000cm^{-1}$$876cm^{-1}$에서 흡수 밴드가 나타났으며, $2,000cm^{-1}$$635cm^{-1}$$SiH_1$의 stretching과 rocking 모드에 기인한 것이며 $876cm^{-1}$의 weak 밴드는 $SiH_2$ vibration 모드에 의한 것이다. a-SiN:H는 optical bandgap이 2.61 eV이고 굴절률은 $1.8\~2.0$, 저항률은 $10^{11}\~10^{15}\Omega-cm$ 정도로 실험 조건에 따라 약간 다르게 나타난다. 강유전체$(SrTiO_3)$ 박막의 유전상수는 $60\~100$ 정도이고 항복전계는 IMV/cm 이상으로 우수한 절연특성을 갖고 있다. 강유전체를 이용한 TFT의 채널 길이는 $8~20{\mu}m$, 채널 넓이는 $80~200{\mu}m$로서 드레인 전류가 게이트 전압 20V에서 $3.4{\mu}A$이고 $I_{on}/I_{off}$ 비는 $10^5\~10^8,\;V_{th}$$4\~5\;volts$이다.

FOWLP 적용을 위한 Cu 재배선과 WPR 절연층 계면의 정량적 계면접착에너지 측정방법 비교 평가 (Comparison of Quantitative Interfacial Adhesion Energy Measurement Method between Copper RDL and WPR Dielectric Interface for FOWLP Applications)

  • 김가희;이진아;박세훈;강수민;김택수;박영배
    • 마이크로전자및패키징학회지
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    • 제25권2호
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    • pp.41-48
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    • 2018
  • Fan-out wafer level packaging (FOWLP) 적용을 위한 최적의 Cu 재배선 계면접착에너지 측정방법을 도출하기 위해, 전기도금 Cu 박막과 WPR 절연층 계면의 정량적 계면접착에너지를 $90^{\circ}$ 필 테스트, 4점 굽힘 시험법, double cantilever beam (DCB) 측정법을 통해 비교 평가 하였다. 측정 결과, 세 가지 측정법 모두 배선 및 패키징 공정 후 박리가 일어나지 않는 산업체 통용 기준인 $5J/m^2$보다 높게 측정되었다. 또한, DCB, 4점 굽힘 시험법, $90^{\circ}$ 필 테스트 순으로 계면접착에너지가 증가하는 거동을 보였는데, 이는 계면파괴역학 이론에 의해 위상각 증가에 따라 이종재료 계면균열 선단의 전단응력성분 증가에 따른 소성변형에너지 및 계면 거칠기 증가 효과에 의한 것으로 설명이 가능하다. FOWLP 재배선에 대한 최적의 계면접착에너지 도출을 위해서는 시편제작 공정, 위상각 차이, 정량적 측정 정확도 및 결합력 크기 등을 고려하여 4점 굽힘 시험법 또는 DCB 측정법을 적절히 혼용 사용하는 것이 타당한 것으로 판단된다.

Design Optimization of Composite Radar Absorbing Structures to Improve Stealth Performance

  • Jang, Byungwook;Kim, Myungjun;Park, Jungsun;Lee, Sooyong
    • International Journal of Aeronautical and Space Sciences
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    • 제17권1호
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    • pp.20-28
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    • 2016
  • In this study, an efficient method of designing laminate composite radar absorbing structures (RAS) is proposed with consideration given to the structural shape so as to improve aircraft stealth performance. The calculation of the radar cross section (RCS) should be decreased to enhance the efficiency of the stochastic optimization when designing an RAS. In the proposed method, RAS are optimized to match up the input impedance of the minimal RCS, which is obtained by using physical optics and the transmission line theory. Single and double layer dielectric RAS for aircraft wings are employed as numerical examples and designed using the proposed method, RCS minimization and reflection coefficient minimization. The availability of the proposed method is assessed by comparing the similarity of the results and computation time with other design methods. According to the results, the proposed method produces the same results as the stochastic optimization, which adopts the RCS as the objective function, and can improve RAS design efficiency by reducing the number of RCS analyses.

Role of Charge Produced by the Gas Activation in the CVD Diamond Process

  • Hwang, Nong-Moon;Park, Hwang-Kyoon;Suk Joong L. Kang
    • The Korean Journal of Ceramics
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    • 제3권1호
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    • pp.5-12
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    • 1997
  • Charged carbon clusters which are formed by the gas activation are suggested to be responsible for the formation of the metastable diamond film. The number of carbon atoms in the cluster that can reverse the stability between diamond and graphite by the capillary effect increases sensitively with increasing the surface energy ratio of graphite to diamond. The gas activation process produces charges such as electrons and ions, which are energetically the strong heterogeneous nucleation sites for the supersaturated carbon vapor, leading to the formation of the charged clusters. Once the carbon clusters are charged, the surface energy of diamond can be reduced by the electrical double layer while that of graphite cannot because diamond is dielectric and graphite is conducting. The unusual phenomena observed in the chemical vapor deposition diamond process can be successfully approached by the charged cluster model. These phenomena include the diamond deposition with the simultaneous graphite etching, which is known as the thermodynamic paradox and the preferential formation of diamond on the convex edge, which is against the well-established concept of the heterogeneous nucleation.

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바이오센서로 응용을 위한 양극산화알루미늄의 양극산화 온도에 따른 제작 및 전기적 특성 (Fabrication and Electrical Properties of Anodic Aluminum Oxide Membrane with Various Anodizing Temperatures for Biosensor)

  • 여진호;이성갑;김용준;이영희
    • 한국전기전자재료학회논문지
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    • 제27권6호
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    • pp.394-398
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    • 2014
  • We fabricated the electrolyte-dielectric-metal (EDM) sensor on the base of AAO (anodic aluminum oxide) template with variation of the anodizing temperature. When a surface is immersed or created in an aqueous solution, a discontinuity is formed at the interface where such physicochemical variables as electrical potential and electrolyte concentration change significantly from the aqueous phase to another phase. Because of the different chemical potentials between the two phases, charge separation often occurs at the interfacial region [1]. This interfacial region, togeter with the charged surface, is usually known as the electrical double layer (EDL) [2]. The structural and electrochemical properties of AAO sensor were investigated for applications in capacitive pH sensors. To change the thickness of the AAO template, the anodizing temperature was varied from $5^{\circ}C$ to $20^{\circ}C$, the thickness of the AAO template invreased from 300 nm to 477 nm. The pH sensitivity of sensors with the anodizing temperature of $20^{\circ}C$ showed the highest value of 56.4 mV/pH in the pH range of 3 to 11. The EDM sensor with the anodizing temperature of $20^{\circ}C$ exhibited the best long-term stability of 0.037 mV/h.