• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.159-161
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• 2007

We fabricated flexible OTFT-backplanes for the electrophoretic display(EPD). The OTFTs employed bottom contact structure on PEN substrate and used the cross-linked polyvinylphenol for gate insulator, pentacene for active layer. Especially, we used PVA/Acryl double layers for passivation of backplane as well as for pixel dielectric layer between backplane and EPD panel. The OTFT-EPD panel worked successfully anddemonstrated to display some patterns.

• Journal of Navigation and Port Research
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• v.30 no.9
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• pp.763-766
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• 2006

In this paper, the EM wave absorbers were designed and fabricated for X -band sensors using Carbon of dielectric material with CPE. The complex relative permittivity of samples is calculated by using measurement results of S-parameter. We simulated the double-layered type EM wave absorber with broad bandwidth using the measured complex relative permittivity by changing the thickness and layer, which was fabricated based on the simulated design The fabricated EM wave absorber consists of 1 mm first layer sheet facing metal with Carbon composition ratio 70 vol. % and 1.5 mm second layer sheet with Carbon composition ratio 60 vol. %. The measured results showed a good agreement to the simulated ones. It is found toot the optimized absorption ability of double-layered type EM wave absorber with thickness of 2.5 mm is higher than 10 dB from 7.8 GHz to 13.3 GHz.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• v.1
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• pp.297-300
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• 2006

In this paper, the EM wave absorbers were designed and fabricated for X-band sensors using Carbon of dielectric material with CPE. The complex relative permittivity of samples is calculated by the measured S-parameter data. We simulated the double-layered type EM wave absorber with broad bandwidth using the measured complex relative permittivity by changing the thickness and layer, which was fabricated based on the simulated design. The fabricated EM wave absorber consist of 1mm first layer sheet facing metal with Carbon composition ratio 70 vol% and 1.5 mm second layer sheet with Carbon composition ratio 60 vol%. The comparisons of simulated and measured results are good agreement. As a result, the optimized absorption ability of double-layered type EM wave absorber with thickness of 2.5 mm is higher than 10 dB from 7.8 GHz to 13.3 GHz.

• Journal of the Korean Ceramic Society
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• v.21 no.1
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• pp.60-66
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• 1984

During the metallization in the manufacturing of the ceramic capacitor at the boundary layer between Pd or Pt electrode and $BaTiO_3$-dielectric reactions were analysed. For the study of the reaction Electron Spin Resonance (ESR) Method was used. With the aid of ESR an increased of the concentration of the paramagnetic $Ti^{3+}$-Centers on the metallizing process could be seen. It meaned a reduction effect although the metallization was accomplished under oxidation atmosphere. Therefore it could be regarded as a reaction at the boundary layer. In order to investigate the reaction ad double octahedral model was compared and the increase of the $Ti^{3+}$-concentration was studied.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.570-572
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• 2012

In this paper, a three-dimensional (3-D) low-loss and wide-band BPF based on low-temperature co-fired ceramic (LTCC) has been presented for mm-wave wireless communication applications. The proposed BPF is designed in a 6-layer LTCC substrate. The double patch resonators are fully integrated into the LTCC dielectrics and vertical via and planar CPW transitions are designed for interconnection between embedded resonators and in/output ports and MMICs, respectively. The designed BPF was fabricated in a 6-layer LTCC dielectric. The fabricated BPF shows a centre frequency (fc) of 53.23 GHz and a 3dB bandwidth of 14.01 % from 49.5 to 56.9 GHz (7.46 GHz). An insertion loss of -1.56 dB at fc and return losses below -10 dB are achieved. Its whole size is $4.7{\times}1.7{\times}0.684mm^3$.

• Applied Chemistry for Engineering
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• v.33 no.3
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• pp.315-321
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• 2022

We firstly observed that activated carbon (AC) deposited by atomic-layer vanadium pentoxide (V₂O₅) was used as CDI electrodes to utilize the high dielectric constant for enhancing the capacitance equipped with atomic layer deposition (ALD). It was demonstrated that the vanadium pentoxide (V₂O₅) with sub-nanometer layer was effectively deposited onto activated carbon, and the electric double-layer capacitance of the AC was improved due to an increase in the surface charge density originated from polarization, leading to high ion removal in CDI operation. It was confirmed that the performance of modified-AC increases more than 200%, comparable to that of pristine-AC under 1.5 V at 20 mL min^-1 in CDI measurements.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.516-520
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• 2012

In this paper, we have theoretically analyzed and designed a dielectric multi-layer sensor with a SPR (surface plasmon resonance) using analytical calculation and FDTD (finite difference time-domain) methods. The proposed structure is composed of periodic layer and thin metal film. It has many advantages. One of that is a high sensitivity of the SPR. Another is a high Q-factor of the characteristics in the PhC (photonic crystals) micro-cavity structure. The incident light has double resonance characteristics, because the filtered light by PhC structure, dielectric multi-layer, is met the thin metal film for SPR effect. We have also observed the change of resonance characteristics according to the variation of effective index on the metal film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05a
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• pp.210-213
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• 2002

For insulation design of the superconducting transformer, many types of insulation tests should be carried out. To clarify the components of insulation for superconducting transformer, there are main four parts as 1ike that turn-to-turn interior of each primary and secondary windings, layer-to-layer between primary and secondary windings, and winding to grounded structures. The insulation components should meet the required withstand voltage of the system and enough safety factors must included. As the fundamental insulation characteristics, we tested surface flashover voltage of spacer that would place between the coils and would take the role of both cooling duct and insulator. The structure of spacer in practice vary depending on coil type, in this work we considered double pancake coil for the superconducting transformer. In this study we tested flashover voltages of several arrangement of spacer.

• 한국태양에너지학회:학술대회논문집
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• 2011.11a
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• pp.245-248
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• 2011

Many researches have been carried out to improve light absorption in the crystalline silicon solar cell fabrication. The rear reflection is applied to increase the path length of light, resulting in the light absorption enhancement and thus the efficiency improvement mainly due to increase in short circuit current. In this paper, we manufactured the silicon solar cell using the mono crystalline silicon wafers with $156{\times}156mm^2$, 0.5~3.0 ${\Omega}{\cdot}cm$ of resistivity and p-type. After saw damage removal, the dielectric film ($SiN_x$)on the back surface was deposited, followed by surface texturing in the KOH solution. It resulted in single-side texturing wafer. Then the dielectric film was removed in the HF solution. The silicon wafers were doped with phosphorus by $POCl_3$ with the sheet resistance 50 ${\Omega}/{\Box}$ and then the silicon nitride was deposited on the front surface by the PECVD with 80nm thickness. The electrodes were formed by screen-printing with Ag and Al paste for front and back surface, respectively. The reflectance and transmittance for the single-sided and double-sided textured wafers were compared. The double-sided textured wafer showed higher reflectance and lower transmittance at the long wavelength region, compared to single-sided. The completed crystalline silicon solar cells with different back surface texture showed the conversion efficiency of 17.4% for the single sided and 17.3% for the double sided. The efficiency improvement with single-sided textured solar cell resulted from reflectance increase on back surface and light absorption enhancement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.39-39
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• 2009

We fabricated p-channel TFTs based on poly Silicon. The 35nm thickness silicon dioxide layer structure got higher $I_{on}/I_{off}$ ratio, field-effect Mobility and output current than 10nm thickness. And 35nm layer showed low leakage current and threshold voltage. So, 35nm thickness silicon dioxide layer TFTs are faster reaction speed and lower power consumption than 10nm thickness.