• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.309-313
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• 2006

We demonstrated 2.2inch qqVGA AMOLED display drived by ultra low temperature poly-Si (ULTPS) TFT not transferred but direct fabricated below $200^{\circ}C$. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma - CVD. In order to reduce stress of plastic, organic film was coated as inter-dielectric and passivation layers. Finally, ULTPS TFT of which mobility is over $20cm^2/Vsec$ was fabricated on transparent plastic substrate and drived OLED display successfully.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.257-260
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• 2007

Hydrogenated amorphous silicon thin film transistors were fabricated on a flexible metal substrate. A negative voltage at a floated gate can be induced by a negative substrate bias through a capacitor between the substrate and gate electrode. This can recover the shifted-threshold voltage to an original value.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1081-1084
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• 2007

System on Panel (SOP) can integrate many functions by Thin Film Transistor (TFT) circuits on an insulator substrate without using external driver LSIs. However, to make practical SOP has become more and more difficult because of rapid cost reduction of the driver LSIs. This paper will review the circuit design technology trend for SOP and introduce an example of a practical SOP, 2.0inch QVGA full color active matrix OLED with 8bit source driver.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.679-682
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• 2003

We report the suitable SLS (sequential lateral solidification) as a function of laser intensity. Precursor film is changed from 50nm to 100nm and is deposited on glass substrate by PECVD. We can find the suitable SLS length by changing the mask size. In this paper, we present the well-defined grain growth conditions as a function of laser intensity.

• Journal of Information Display
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• v.5 no.2
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• pp.1-5
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• 2004

We developed an a-Si TFT-LCD panel with integrated gate driver circuit using a standard 5-MASK process. To minimize the effect of the a-Si TFT current and LC's capacitance variation with temperature, we developed a new a-Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3-side free panel structure in a-Si TFT-LCD of QVGA ($240{\times}320$) resolution. And using double ASG structure the dead space of TFT-LCD panel could be further decreased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.5
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• pp.344-349
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• 2015

A new information society of late has arrived by the rapid development of various information & communications technologies. Accordingly, mobile devices which are light and thin, easy and convenient to carry on the market. Also, the requirements for the larger television sets such as fast response speed, low-cost electric power, wider visual angle display are sufficiently satisfied. The currently most widely studied display material, the Organic Light-emitting Diodes(OLEDs) overwhelms the Liquid Crystal Display(LCD), the main occupier of the market. This new material features a response speed of more than a thousand times faster, no need of backlight, a low driving voltage, and no limit of view angle. And the OLEDs has high luminance efficiency and excellent durability and environment resistance, quite different from the inorganic LED light source. The OLEDs with simple device structure and easy produce can be manufactured in various shapes such as a point light source, a linear light source, a surface light source. This will surely dominate the market for the next generation lighting and display device. The new display utilizes not the glass substrate but the plastic one, resulting in the thin and flexible substrate that can be curved and flattened out as needed. In this paper, OLEDs device was produced by changing thickness of Teflon-AF of hole injection material layer. And as for the electrical properties, the four layer device of ITO/TPD/$Alq_3$/BCP/LiF/Al and the five layer device of ITO/Teflon AF/TPD/$Alq_3$/BCP/Lif/Al were studied experimentally.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.199-203
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• 2017

$ZrO_2/PSS$ thin film with a high refractive index was fabricated on a glass substrate by a layer-by-layer self-assembly method. The surface morphology and thickness of the fabricated $ZrO_2/PSS$ thin films were measured as a function of the number of $(ZrO_2/PSS)n$. As the number of $(ZrO_2/PSS)n$ increased from n = 5 to n = 20, RMS roughness decreased from 29.01 nm to 8.368 nm. The $ZrO_2$ thin films exhibited high transmittance of 85% or more; and the 15-bilayer thin film exhibited the highest transmittance among the samples. The transmittance of the fabricated $(ZrO_2/PSS)_{15}$ thin film was ca. 90.8% in the visible range. The refractive index of the glass substrate coated by a $(ZrO_2/PSS)_{15}$ thin film with a thickness of 160 nm increased from ca. 1.52 to 1.74 at the 632 nm wavelength.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.633-636
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• 2006

GE has developed a plastic substrate technology comprised of a superior high-heat polycarbonate substrate film and a unique transparent coating package that provides the ultrahigh barrier to moisture and oxygen, and chemical resistance to solvents used in device fabrication. This contribution will update recent progresses made at GEFlexible Ultra-high Gas Barrier Substrate for Organic Electronics on ultra-high barrier coated plastic substrate, both in batch mode and in roll-to-roll mode

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.395-398
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• 2004

We developed an a-Si TFT-LCD panel with integrated gate driver circuit using a standard 5-MASK process. To minimize the effect of the a-Si TFT current and LC's capacitance variation with temperature, we developed a new a-Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3-side free panel structure in a-Si TFT-LCD of QVGA(240$^{\ast}$320) resolution. And using double ASG structure the dead space of TFT-LCD panel could be further decreased.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.189-192
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• 2008

A 5.8-inch wide-QQVGA flexible full-color active-matrix OLED display was fabricated on a plastic substrate. Low-voltage-operation organic TFTs and high-efficiency phosphorescent OLEDs were used as the backplane and emissive pixels, respectively. The fabricated display clearly showed color moving images when the driving voltage was below 15 V.