• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.97-98
• /
• 2006

High current behaviors of the grounded gate extended drain N-type metal-oxide-semiconductor field effects transistor (GG_EDNMOS) electro-static discharge (ESD) protection devices are analyzed. Simulation based contour analyses reveal that combination of BJT operation and deep electron channeling induced by high electron injection gives rise to the 2-nd on-state. Thus, the deep electron channel formation needs to be prevented in order to realize stable and robust ESD protection performance. Based on our analyses, general methodology to avoid the double snapback and to realize stable ESD protection is to be discussed.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.1305-1308
• /
• 2008

In this study, we redesigned the reliable integrated on-panel display gate driver that was equipped with dual pull-down as well as controlled discharge-path structure to reduce the high voltage stress effect and realized with TSMC 0.35 um CMOS-based technology before. An improved discharge path and a low noise design are proposed for our new a-Si TFT process implementation. Our novel reliable gate driver design can make each cell of shift register to be insensitive to the coupling noise of that stage.

• Journal of Environmental Impact Assessment
• /
• v.18 no.6
• /
• pp.377-386
• /
• 2009

Due to severe flooding, the long-term residence of turbidity flows within the stratified Daecheong Reservoir have lengthened. A long-term residence of turbidity flows within the stratified Daecheong Reservoir after floods has been major environmental issue. The objective of this study was to assess the impact to water supply from the hydrodynamics and turbidity outflow. Two gate operation scenarios were investigated. Scenario A refers to gate operations according to rainfall events, and scenario B refers to gate operations according to inflow. From the results of secenario A, the SS concentrations decreased from 0.44mg/l to 0.54mg/l at the front of the dam, whereas SS concentrations increased from 0.24mg/l to 1.24mg/l at the intake points at Munhi and Daejeon. From the results of scenario B, the SS concentrations decreased from 0.61mg/l to 0.83mg/l at the front of Dam; howeve, SS concentrations also decreased from 0.16mg/l to 0.48mg/l at the intake points at Munhi and Daejeon. It seems that it may be more efficient to control turbidity by creating additional outflows of generated discharge after intensive rainfalls than not.

• Journal of Environmental Science International
• /
• v.25 no.4
• /
• pp.491-504
• /
• 2016

This study, examines the flow characteristics of upstream channel depending on water gate operation of Nakdan Multi-fuctional weir. The specific purpose of this study are to simulate the variation of flow velocity depending on the operation of the weir using 1-dimensional hydraulic model, HEC-RAS, and compare it with observed velocity. For discharge conditions from $50m^3/s$ to $3,500m^3/s$, it is observed that the velocity of upstream channel is almost constant, whereas for probability flood discharge, the velocity and froude number are increased as the discharge values are increased. The velocity values for downstream boundary condition EL, 40.0 m are more decreased than those for EL. 40.5m. From comparison on the variation of water stage depending on water gate operation, it is observed that the stage values are almost constant for discharges below $300m^3/s$, whereas 5 cm to 20 cm for discharges over $700m^3/s$. Flow velocity at streamflow gauging station. Nakdong, is decreased by more than 875% after installing the weir. The results obtained from this study indicate that the velocity of upstream channel is decreased and the discharge and velocity of downstream channel are significantly varied after installing the weir.

• Journal of Wetlands Research
• /
• v.24 no.1
• /
• pp.52-58
• /
• 2022

Recently, various efforts and research are being conducted to integrated management of the estuary in Nakdong River. As one of such studies, measurement of opening discharge amount for each floodgate using a three-dimensional fixed ultrasonic flow meter is being conducted, but studies on hydraulic and statistical processing procedures and techniques using actual measurement results for calculating discharge amount by opening remain at the basic level. Therefore, in this study, a data processing technique using three-dimensional fixed ultrasonic flow meter measurement data was developed, the flow coefficient was calculated based on the measured data, and the applicability of the discharge amount calculation formula development was reviewed.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
• /
• 2004.05a
• /
• pp.24-28
• /
• 2004

본 연구는 기존에 제안한 방전 AND gate PDP의 결점을 개선한 연구로써 AND gate를 구성하는 DC 방전의 극성을 반대로 설계하여 인접 주사전극에 대한 cross talk를 개선하였다. 또한 기존의 AND gate가 공간전하에 의한 방전의 비선형성에 의존한 것과는 달리 본 연구에서 제안한 AND gate는 방전 경로에 따른 전압의 변화에 의존하는 것으로 AND gate의 동작이 한층 안정해 졌다. 실험 결과 4개의 수평 주사전극에 대해 선택적인 어드레스 방전이 가능하였으며 각각 34V와 70V의 AND 방전 및 Data 방전의 동작마진을 얻을 수가 있었다.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.45 no.10
• /
• pp.1-6
• /
• 2008

The holding voltage of the high-voltage MOSFETs in snapback condition is much smaller than the power supply voltage. Such characteristics may cause the latcup-like problems in the Smart Power ICs if these devices are directly used in the ESD (Electrostatic Discharge) power clamp. In this work, a latchup-free design based on the Drain-Extended PMOS (DEPMOS) adopting gate VDD structure is proposed. The operation region of the proposed gate-VDD DEPMOS ESD power clamp is below the onset of the snapback to avoid the danger of latch-up. From the measurement on the devices fabricated using a $0.35\;{\mu}m$ BCD (Bipolar-CMOS-DMOS) Process (60V), it was observed that the proposed ESD power clamp can provide 500% higher ESD robustness per silicon area as compared to the conventional clamps with gate-driven LDMOS (lateral double-diffused MOS).

• Water for future
• /
• v.29 no.2
• /
• pp.209-219
• /
• 1996

The existing gate operation rule of Paldang hydroelectric plant has been used since the construction of the dam in 1973 except partial modification due to the construction of Chungju multipurpose dam in 1985. The water level near the downstream of Paldang dam has been lowered about 3 m because of the channel maintenance of Han River development project. Thus, the discharge estimation formula based on the submerged orifice type spillway has to be re-evaluated by considering various patterns of the gate operation rules and lowered channel bed. In this study, three types of gate openings were tested to select the proper gate operation rules through the hydraulic model test for various discharges and opening heights. Also, the numerical analysis has been performed to simulate the flow patterns of downstream. As a result, the gate operation rule, which opens 5 gates each time from the left side, was selected as the proper gate operation rule of Paldang dam.

• Journal of Korean Society of Coastal and Ocean Engineers
• /
• v.20 no.2
• /
• pp.184-193
• /
• 2008

The gate expansion was planed to increase discharge capacity of gate structure at sea dike in Asan Bay. So it was estimated for changing of hydraulic states in Pyeongteak Harbor Zone caused by gate expansion, using Delft3D, FLOW-3D and hydraulic physical scale model testing. In result, the influence of gate expansion was indicated to be weak.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
• /
• 2004.05a
• /
• pp.248-252
• /
• 2004

본 연구에서는 새로 고안된 NOT 논리를 포함한 방전 AND gate의 방전특성에 대해 고찰하고 동작 특성을 해석하였다. 새로 고안된 방전 AND gate는 방전 경로에 따른 전극사이의 전압의 변화로 AND 출력을 유도한다. 측정결과 AND 출력은 A전극의 A1전압과 B전극 전압의 상호 관계에 영향을 받는다는 것을 알았다. 또한 AND 출력을 위한 DC priming 방전은 방전 후 $30{\mu}s$ 정도까지 영향을 미치며 방전 강도는 AND gate의 특성에 영향을 주지 않는다는 것을 알았다. 시험결과를 통해 AND gate를 구성하는 각 전극 전압의 최적 값을 얻었으며 기존의 연구 결과보다 안정적인 AND 동작을 확인하였다.