• Title/Summary/Keyword: direct spectrum

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Spread of CTX-M Extended-spectrum β-lactamase Producing Escherichia coli in the Community in Chungcheong Area, Korea

  • Sung, Ji Youn;Oh, Ji-Eun;Kim, Eun Sun;Son, Ja Min;Kim, Hye Yeon;Lim, Da Young
    • Korean Journal of Clinical Laboratory Science
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    • v.45 no.2
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    • pp.43-47
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    • 2013
  • This study was designed to evaluate the prevalence of ESBL genes and monitor antimicrobial resistance pattern in Escherichia coli, isolated from a hospital and a community. We tested 200 E. coli strains isolated in the hospitals and community in Chungcheong area from January to March 2012. Antimicrobial susceptibilities were tested by using the disk diffusion method. A search for ESBL genes was conducted by PCR amplification, and the genotypes were determined by direct nucleotide sequence analysis of the amplified products. An Epidemiologic study was performed by repetitive extragenic palindromic sequence-based PCR (REP-PCR). The percentage of ESBL-producing isolates was 17% for hospital associated E. coli and 11% for community associated E. coli. The ESBL gene sequencing results showed that the most common ESBL in E. coli was CTX-M-14 (19/28), followed by CTX-M-15 (9/28). The REP-PCR study also showed the genetic diversity, but there was no difference between the hospital and community associated E. coli. In this study, the most common types of class A ESBLs identified were CTX-M in the hospital and the community in Chungcheong area. ESBL-producing E. coli isolates showed diverse clonality.

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Photoluminescence from silicon nanocrystals in silicon ion implanted SiO2 layers (실리콘 이온주입 SiO2층의 나노결정으로 부터의 광루미네센스)

  • Kim, Kwang-Hee;Oh, Hang-Seok;Jang, Tae-Su;Kwon, Young-Kyu;Lee, Yong-Hyun
    • Journal of Sensor Science and Technology
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    • v.11 no.3
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    • pp.183-190
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    • 2002
  • Photoluminescence(PL) properties of $Si^+$-implanted $SiO_2$ film, which was thermally grown on c-Si substrate, is reported. We have compared room temperature photoluminescence (PL) spectra of the samples which was made in several kinds of implantation, subsequent annealing and $SiO_2$ film thickness. XRD data was correlated with the PL spectra. Silicon nanocrystals in $SiO_2$ film is considered as the origin of the photoluminescence. PL spectra was investigated after wet etching of the $SiO_2$ film by using BOE (Buffered Oxide Etchant) at every one minute. PL peak wavelength was varied as the etching is proceeded. These results indicate that the quantity and the distribution of dominant size of Si nanocrystals in $SiO_2$ film seem to have a direct effect on PL spectrum.

A Design on High Frequency CMOS VCO for UWB Applications (UWB 응용을 위한 고주파 CMOS VCO 설계 및 제작)

  • Park, Bong-Hyuk;Lee, Seung-Sik;Choi, Sang-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.2 s.117
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    • pp.213-218
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    • 2007
  • In this paper, we propose the design and fabrication on high frequency CMOS VCO for DS-UWB(Direct-Sequence Ultra-WideBand) applications using 0.18 ${\mu}m$ process. The complementary cross-coupled LC oscillator architecture which is composed of PMOS, NMOS symmetrically, is designed for improving the phase noise characteristic. The resistor is used instead of current source that reduce the 1/f noise of current source. The high-speed buffer is needed for measuring the output characteristic of VCO using spectrum analyzer, therefore the high-speed inverter buffer is designed with VCO. A fabricated core VCO size is $340{\mu}m{\times}535{\mu}m$. The VCO is tunable between 7.09 and 7.52 GHz and has a phase noise lower than -107 dBc/Hz at 1-MHz offset over entire tuning range. The measured harmonic suppression is 32 dB. The VCO core circuit draws 2.0 mA from a 1.8 V supply.

Evidence of Spin Reorientation by Mössbauer Analysis

  • Myoung, Bo Ra;Kim, Sam Jin;Kim, Chul Sung
    • Journal of Magnetics
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    • v.19 no.2
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    • pp.126-129
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    • 2014
  • We report the crystallographic and magnetic properties of $Ni_{0.3}Fe_{0.7}Ga_2S_4$ by means of X-ray diffractometer (XRD), a superconducting quantum interference device (SQUID) magnetometer, and a M$\ddot{o}$ssbauer spectroscopy. In particular, $Ni_{0.3}Fe_{0.7}Ga_2S_4$ was studied by M$\ddot{o}$ssbauer analysis for evidence of spin reorientation. The chalcogenide material $Ni_{0.3}Fe_{0.7}Ga_2S_4$ was fabricated by a direct reaction method. XRD analysis confirmed that $Ni_{0.3}Fe_{0.7}Ga_2S_4$ has a 2-dimension (2-D) triangular lattice structure, with space group P-3m1. The M$\ddot{o}$ssbauer spectra of $Ni_{0.3}Fe_{0.7}Ga_2S_4$ at spectra at various temperatures from 4.2 to 300 K showed that the spectrum at 4.2 K has a severely distorted 8-line shape, as spin liquid. Electric quadrupole splitting, $E_Q$ has anomalous two-points of temperature dependence of $E_Q$ curve as freezing temperature, $T_f=11K$, and N$\acute{e}$el temperature, $T_N=26K$. This suggests that there appears to be a slowly-fluctuating "spin gel" state between $T_f$ and $T_N$, caused by non-paramagnetic spin state below $T_N$. This comes from charge re-distribution due to spin-orientation above $T_f$, and $T_N$, due to the changing $E_Q$ at various temperatures. Isomer shift value ($0.7mm/s{\leq}{\delta}{\leq}0.9mm/s$) shows that the charge states are ferrous ($Fe^{2+}$), for all temperature range. The Debye temperature for the octahedral site was found to be ${\Theta}_D=260K$.

Ambient dose equivalent measurement with a CsI(Tl) based electronic personal dosimeter

  • Park, Kyeongjin;Kim, Jinhwan;Lim, Kyung Taek;Kim, Junhyeok;Chang, Hojong;Kim, Hyunduk;Sharma, Manish;Cho, Gyuseong
    • Nuclear Engineering and Technology
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    • v.51 no.8
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    • pp.1991-1997
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    • 2019
  • In this manuscript, we present a method for the direct calculation of an ambient dose equivalent (H* (10)) for the external gamma-ray exposure with an energy range of 40 keV to 2 MeV in an electronic personal dosimeter (EPD). The designed EPD consists of a 3 × 3 ㎟ PIN diode coupled to a 3 × 3 × 3 ㎣ CsI (Tl) scintillator block. The spectrum-to-dose conversion function (G(E)) for estimating H* (10) was calculated by applying the gradient-descent method based on the Monte-Carlo simulation. The optimal parameters for the G(E) were found and this conversion of the H* (10) from the gamma spectra was verified by using 241Am, 137Cs, 22Na, 54Mn, and 60Co radioisotopes. Furthermore, gamma spectra and H* (10) were obtained for an arbitrarily mixed multiple isotope case through Monte-Carlo simulation in order to expand the verification to more general cases. The H* (10) based on the G(E) function for the gamma spectra was then compared with H* (10) calculated by simulation. The relative difference of H* (10) from various single-source spectra was in the range of ±2.89%, and the relative difference of H* (10) for a multiple isotope case was in the range of ±5.56%.

Graphene Formation on Ni/SiO2/Si Substrate Using Carbon Atoms Activated by Inductively-Coupled Plasma Chemical Vapor Deposition (유도결합 플라즈마 화학기상증착법에 의해 활성화된 탄소원자를 이용한 Ni/SiO2/Si 기판에서 그래핀 성장)

  • Nang, Lam Van;Kim, Eui-Tae
    • Korean Journal of Materials Research
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    • v.23 no.1
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    • pp.47-52
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    • 2013
  • Graphene has been synthesized on 100- and 300-nm-thick Ni/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90% Ar (99 SCCM) at $900^{\circ}C$ by using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The film morphology of 100-nm-thick Ni changed to islands on $SiO_2$/Si substrate after heat treatment at $900^{\circ}C$ for 2 min because of grain growth, whereas 300-nm-thick Ni still maintained a film morphology. Interestingly, suspended graphene was formed among Ni islands on 100-nm-thick Ni/$SiO_2$/Si substrate for the very short growth of 1 sec. In addition, the size of the graphene domains was much larger than that of Ni grains of 300-nm-thick Ni/$SiO_2$/Si substrate. These results suggest that graphene growth is strongly governed by the direct formation of graphene on the Ni surface due to reactive carbon radicals highly activated by ICP, rather than to well-known carbon precipitation from carbon-containing Ni. The D peak intensity of the Raman spectrum of graphene on 300-nm-thick Ni/$SiO_2$/Si was negligible, suggesting that high-quality graphene was formed. The 2D to G peak intensity ratio and the full-width at half maximum of the 2D peak were approximately 2.6 and $47cm^{-1}$, respectively. The several-layer graphene showed a low sheet resistance value of $718{\Omega}/sq$ and a high light transmittance of 87% at 550 nm.

Listener Auditory Perception Enhancement using Virtual Sound Source Design for 3D Auditory System

  • Kang, Cheol Yong;Mariappan, Vinayagam;Cho, Juphil;Lee, Seon Hee
    • International journal of advanced smart convergence
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    • v.5 no.4
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    • pp.15-20
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    • 2016
  • When a virtual sound source for 3D auditory system is reproduced by a linear loudspeaker array, listeners can perceive not only the direction of the source, but also its distance. Control over perceived distance has often been implemented via the adjustment of various acoustic parameters, such as loudness, spectrum change, and the direct-to-reverberant energy ratio; however, there is a neglected yet powerful cue to the distance of a nearby virtual sound source that can be manipulated for sources that are positioned away from the listener's median plane. This paper address the problem of generating binaural signals for moving sources in closed or in open environments. The proposed perceptual enhancement algorithm composed of three main parts is developed: propagation, reverberation and the effect of the head, torso and pinna. For propagation the effect of attenuation due to distance and molecular air-absorption is considered. Related to the interaction of sounds with the environment, especially in closed environments is reverberation. The effects of the head, torso and pinna on signals that arrive at the listener are also objectives of the consideration. The set of HRTF that have been used to simulate the virtual sound source environment for 3D auditory system. Special attention has been given to the modelling and interpolation of HRTFs for the generation of new transfer functions and definition of trajectories, definition of closed environment, etc. also be considered for their inclusion in the program to achieve realistic binaural renderings. The evaluation is implemented in MATLAB.

Thermal Characteristics of the design on Residential 13.5W COB LED Down Light Heat Sink (주거용 13.5W COB LED 다운라이트 방열판 설계에 따른 열적 특성 분석)

  • Kwon, Jae-hyun;Lee, Jun-myung;Kim, Hyo-jun;Kang, Eun-young;Park, Keon-jun
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.7 no.1
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    • pp.20-25
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    • 2014
  • There are several severe problems for LED device, the next generation's economy green lighting: as the temperature increases, the lamp efficiency decreases; if the temperature is over $80^{\circ}C$, the lifetime of lighting decreases; Red Shift phenomenon that wavelength of spectrum line moves toward long wavelength occurs; and optical power decreases as $T_j$ increases. Thus, Heat sink design that can minimize the heat of LED device is currently in progress. While the thermal resistance of COB Type LED was reduced by direct coupling of LED chip to the board, residential 13.5W requires Heat sink in order resolve heat issue. This study designed Heat Sink suitable for residential 13.5W COB LED down-light and selected the optimum Fin thickness through flow simulation that packaged the designed Heat Sink and 13.5W COB. And finally it analyzed and evaluated the thermal modes using contacting thermometer.

Development of Monte Carlo Simulation Code for the Dose Calculation of the Stereotactic Radiosurgery (뇌 정위 방사선수술의 선량 계산을 위한 몬테카를로 시뮬레이션 코드 개발)

  • Kang, Jeongku;Lee, Dong Joon
    • Progress in Medical Physics
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    • v.23 no.4
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    • pp.303-308
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    • 2012
  • The Geant4 based Monte Carlo code for the application of stereotactic radiosurgery was developed. The probability density function and cumulative density function to determine the incident photon energy were calculated from pre-calculated energy spectrum for the linac by multiplying the weighting factors corresponding to the energy bins. The messenger class to transfer the various MLC fields generated by the planning system was used. The rotation matrix of rotateX and rotateY were used for simulating gantry and table rotation respectively. We construct accelerator world and phantom world in the main world coordinate to rotate accelerator and phantom world independently. We used dicomHandler class object to convert from the dicom binary file to the text file which contains the matrix number, pixel size, pixel's HU, bit size, padding value and high bits order. We reconstruct this class object to work fine. We also reconstruct the PrimaryGeneratorAction class to speed up the calculation time. because of the huge calculation time we discard search process of the ThitsMap and used direct access method from the first to the last element to produce the result files.

Photoelectrochemical Behaviour of Oxide Films on Ti-Ga2O3 Alloy (Ti-Ga 합금 위에 형성된 산화티타늄 피막의 광 전기분해 특성에 관한 연구)

  • Park, Seong-Yong;Cho, Byung-Won;Yun, Kyung-Suk;Lee, Eung-Cho
    • Transactions of the Korean hydrogen and new energy society
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    • v.3 no.2
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    • pp.25-33
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    • 1992
  • With the aim to obtain $TiO_2$ films with an increased photorespones and absorbance in the visible region of the solar spectrum, the direct oxidation of titanium alloys were performed. In this study, $Ti-Ga_2O_3$ alloy was prepared by mixing, pressing and arc melting of appropriate amounts of titanium and $Ga_2O_3$ powder. Electrochemical measurements were performed in three electrode cell using electrolyte of 1M NaOH solution. The oxide films on $Ti-Ga_2O_3$ alloy was composed of $Ti_2O$, TiO, $TiO_2$, $Ga_2TiO_5$. The free energy efficiency (${\eta}e$) of $Ti-Ga_2O_3$ oxide films had 0.8~1.3 % and were increased with the increase of $Ga_2O_3$ content up to 10wt %. The onset potential ($V_{on}$) had -0.8V~0.9V ranges and were shifted to anodic direction with the increase of $Ga_2O_3$ content. The spectral response of Ti-$Ga_2O_3$ oxides were similar to the response of the $TiO_2$ and their $E_g$ were observed to 2.90~3.0eV. Variations of onset potential($V_{on}$) associated with electrolyte pH were -59mV/pH. This probably reflects the nature of the bonding of $OH^-$ ion to the $TiO_2$ surface, a common phenomena in the transition-metal oxides.

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