• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.188-194
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• 1998

The GaSe:$Er^{3+}$(5mol%) single crystals grown by the Bridgman technique displayed a direct energy gap at 1.79 eV and an indirect energy gap of 1.62 eV at 300 ${\circ}^$K. Also an optical absorption peak by impurity was found at 6505 $cm^{-1}$. The peak identified the origin of the electronic transitions to be between the energy levels of $Er^{3+}$ ions.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.296-302
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• 1999

$CdIn_2S_4 and CdIn_2S_4 : Co^{2+}$ singlecrystals of thenormal spinel structure were grown by the C.T.R. method. The optical energy band structure of these compounds had a indirect band gap at the fundamental optical absorption band edge. The direct and the indirect energy gaps are found to be 2.325 and2.179eV for $Cdln_2S_4$ , and 2.303 and 2.169eV for $CdIn_2S_4 and CdIn_2S_4 : Co^{2+}$ at 5K, respectivly. The fundamental absorption band edge of these single crystals shift to a shorter wavelength region with decreasing temperature, and the temperature dependence of the optical energy gaps in these compounds satisfy Varshni equation. The Varshni constants$\alpha and \beta$ of the direct energy gap are given by $13.39{\times}10_{-4}eV/K$ and 509 K for $Cdln_2S_4$ and $29.73{\times}10_{-4} eV/K$ and 1398K for $CdIn_2S_4 and CdIn_2S_4 : Co^{2+}$. The Varshni constants ${\alpha}and {\beta}$ of the indirect energy gap are given by 9.68${\times}10^{-4}$ eV/K 308K for $Cdln_2S_4$ and $13.33{\times}10_{-4}eV/K$ and 440K for $CdIn_2S_4 : Co^{2+}$ respectivly. The impurity optical absorption peaks due to cobalt dopant are observed in $CdIn_2S_4 : Co^{2+}$ single crystal. These impurity optical absorption peaks can be attributed to the electronic transitions between the split energy levels of $Co_{2+}$ ions located at $T_d$ symmetry site of $Cdln_2S_4$ host lattece.

• Journal of the Semiconductor & Display Technology
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• v.14 no.4
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• pp.25-29
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• 2015

In this study, RF magnetron sputtering was used to investigate the relationship between oxygen vacancy and carrier concentration in a GZO film on an amorphous structure. RF power was fixed at 50W and Ar flow was changed on a glass plate to create a thin film at room temperature. The transmittance of Al-adopted amorphous GZO was measured at 85% or higher; therefore, the transmittance was shown to be outstanding in all films. The hall mobility was also shown to be higher at the film showing the high transmittance at a short-wavelength, whereas the optical energy gap was shown to be higher at the film with high oxygen vacancy. The oxygen vacancy at the amorphous oxide semi-conductor increased the optical energy gap while it was not directly involved in increasing the mobility. The oxygen vacancy increases the carrier concentration while lowering the quality of amorphous structure; such factor, therefore affected the mobility. The increase of amorphous property is a direct way to increase the mobility of amorphous oxide semi-conductor.

• Nuclear Engineering and Technology
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• v.44 no.7
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• pp.727-734
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• 2012

A new advanced safety feature of DVI+ (Direct Vessel Injection Plus) for the APR+ (Advanced Power Reactor Plus), to mitigate the ECC (Emergency Core Cooling) bypass fraction and to prevent switching an ECC outlet to a break flow inlet during a DVI line break, is presented for an advanced DVI system. In the current DVI system, the ECC water injected into the downcomer is easily shifted to the broken cold leg by a high steam cross flow which comes from the intact cold legs during the late reflood phase of a LBLOCA (Large Break Loss Of Coolant Accident)For the new DVI+ system, an ECBD (Emergency Core Barrel Duct) is installed on the outside of a core barrel cylinder. The ECBD has a gap (From the core barrel wall to the ECBD inner wall to the radial direction) of 3/25~7/25 of the downcomer annulus gap. The DVI nozzle and the ECBD are only connected by the ECC water jet, which is called a hydrodynamic water bridge, during the ECC injection period. Otherwise these two components are disconnected from each other without any pipes inside the downcomer. The ECBD is an ECC downward isolation flow sub-channel which protects the ECC water from the high speed steam crossflow in the downcomer annulus during a LOCA event. The injected ECC water flows downward into the lower downcomer through the ECBD without a strong entrainment to a steam cross flow. The outer downcomer annulus of the ECBD is the major steam flow zone coming from the intact cold leg during a LBLOCA. During a DVI line break, the separated DVI nozzle and ECBD have the effect of preventing the level of the cooling water from being lowered in the downcomer due to an inlet-outlet reverse phenomenon at the lowest position of the outlet of the ECBD.

• Vacuum Magazine
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• v.3 no.1
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• pp.9-15
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• 2016

Molybdenum disulfide ($MoS_2$), which has 0.65 nm-thick atomic layer, can be easily separated layer by layer due to weak van der Waals interactions in out-of-plane direction. ($MoS_2$), has a good potential in nanoelectronics, because it has high electrical mobility and On/Off ratio. Its band gap energy changes from indirect to direct band gap energy as it goes from bulk to monolayer. Therefore, atomically thin ($MoS_2$), is widely studied in academic and engineering fields. Here, we introduce the research of atomically thin $MoS_2$ and discuss the research directions.

• Proceedings of the KIEE Conference
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• 2002.06a
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• pp.94-97
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• 2002

CdS and $CdS:Co^{2+}$ single crystals were grown by CTR method using iodine as transport material. The grown single crystals have defect chalcopyrite structure with direct band gap. The optical energy band gap was decreased according to add of Co-impurity. We can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_d$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.607-608
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• 2005

In this paper, author describe the undoped and $Co^{2+}$(0.5mole%) doped $Cd_4SnSe_6$ single crystals were grown by the chemical transport reaction(CTR) method. The grown single crystals crystallize in the monoclinic structure of space group Cc and have the direct band gap structure. The energy gaps of them are 1.68 eV for $Cd_4SnSe_6$ and 1.50 eV for $Cd_4SnSe_6:Co^{2+}$ at 300K respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.78-86
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• 1995

Abstract We have investigated the structure and the conductivity of the CdTe films evaporated on the glass substrates by Electron Beam Evaporator (EBE) technique. The structure is observed to be polycrystalline whose phase is mainly hexagonal phase with some cubic phase. Dark electric conductivity is of the order of $1-^{-8} {\Omega}^{-1} cm^{-1}$ and slightly increased by annealing for an hour at $300^{\circ}C$. Activation energy calculated from the electrical conductivity which varies with increasing temperature is 1.446 eV in the case of room temperature substrates. The values of optical band gap are 1.52 eV in direct transition whereas 1.44 eV in indirect. The photoconductivity of the films is of the order of $1-^{-8} {\Omega}^{-1} cm^{-1}$ and the peak energy is about 600 nm in the room temperature. The photoconductivity starts to increase at 850 nm, which is close to 1.446 eV, the activation energy of CdTe polycrystal films.

• Genomics & Informatics
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• v.8 no.2
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• pp.70-75
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• 2010

Asp66his, Asp54Lys, and Asp50Asn are mutations in connexin 26 that are observed in the clinic and give rise to autosomal dominant syndromes. They are the result of point mutations in the human gap junction ${\beta}-2$ gene. In order to investigate the structural mechanism of Bart-Pumphrey Syndrome, Keratitis-Ichthyosis-Deafness Syndrome, and Vohwinkel Syndrome, homology modeling was carried out. Asp66 has direct contact with Asn62 by two hydrogen bonds in the wild-type protein, and in Asp66His, the biggest change observed is a tremendous energy increase caused by hydrogen bond breakage to Asn62. Shifts in the side chain and new hydrogen bond formation are observed for Lys54 compared to the wild-type protein (Asn54) and result in closer contact to Val84. Asp50Asn causes a significant decrease in bond energy, and residual charge reversal repels the ion and metabolites and, hence, inhibits their transportation. Such perturbations are likely to be a factor contributing to abnormal functioning of ion channels, resulting cell death and disease.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.2088-2093
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• 2004

Harmful elements from the exhaust gases are caused by incomplete combustion of mixture inside the engine cylinder and this abnormal combustion like misfire or partial burning is the direct cause of the air pollution and engine performance degradation. In this study, I obtain the shapes of spark, voltage and current generated when changing the experimental parameters such as grounded electrode shapes, electrode gap and the material of center electrodes. After that, I produce ignition energy by using the voltage and current and classify ignition energy into capacitive discharge energy and inductive discharge energy.