• JSTS:Journal of Semiconductor Technology and Science
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• 제7권2호
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• pp.120-131
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• 2007

A comprehensive short channel analytical model has been proposed for High Electron Mobility Transistor (HEMT) to obtain higher cut-off frequency maintaining the reliability of the device. The model has been proposed to consider generalized doping variation in the directions perpendicular to and along the channel. The effect of field plates and different gate-insulator geometry (T-gate, etc) have been considered by dividing the area between gate and the high band gap semiconductor into different regions along the channel having different insulator and metal combinations of different thicknesses and work function with the possibility that metal is in direct contact with the high band gap semiconductor. The variation obtained by gate-insulator geometry and field plates in the field and channel potential can be produced by varying doping concentration, metal work-function and gate-stack structures along the channel. The results so obtained for normal device structure have been compared with previous proposed model and numerical method (finite difference method) to prove the validity of the model.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.589-589
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• 2012

Indium sulfide thin films have been grown onto glass substrates using radio frequency magnetron sputtering at room temperature. The as-deposited film were annealed in nitrogen atmosphere at different temperatures of 100, 200, 300, 400 and $500^{\circ}C$ with an 1 h annealing time. The effect of annealing temperature on composition, structure, morphology and optical properties of the as-grown In2S3 films has been studied. The XRD results indicate that the as-deposited films are composed by a mixture of both cubic ${\alpha}$ and ${\beta}$ crystalline phases, with some fraction of tetragonal phase. The thermal annealing on the films produces the conversion of the cubic crystalline phases to the tetragonal ${\beta}$ one and a crystalline reorientation of the latter phase. The surface morphological analysis reveals that the films grown at $300^{\circ}C$ have an average grain size of ~ 58 nm. These films show a S/In ratio of 0.99. The optical band gap is found to be direct and the films grown at $300^{\circ}C$ shows a higher optical transmittance of 80% and an energy band gap of 2.52 eV.

• 마이크로전자및패키징학회지
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• 제26권3호
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• pp.15-22
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• 2019

In these days, importance of the power electronic devices and modules keeps increasing due to electric vehicles and energy saving requirements. However, current silicon-based power devices showed several limitations. Therefore, wide band gap (WBG) semiconductors such as SiC, GaN, and $Ga_2O_3$ have been developed to replace the silicon power devices. WBG devices show superior performances in terms of device operation in harsh environments such as higher temperatures, voltages and switching speed than silicon-based technology. In power devices, the reliability of the devices and module package is the critically important to guarantee the normal operation and lifetime of the devices. In this paper, we reviewed the recent trends of the power devices based on WBG semiconductors as well as expected future technology. We also presented an overview of the recent package module and fabrication technologies such as direct bonded copper and active metal brazing technology. In addition, the recent heat management technologies of the power modules, which should be improved due to the increased power density in high temperature environments, are described.

• 반도체디스플레이기술학회지
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• 제20권1호
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• pp.12-17
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• 2021

The electronic and magnetic properties for Mn-adsorbed on the chalcopyrite (CH) AlGaP2 semiconductor are investigated by using first-principles FPLMTO method. The clean CH-AlGaP2 without adsorbed Mn is a p-type semiconductor with a direct band-gap. The Mn-adsorbed CH-AlGaP2 exhibits the ferromagnetic state. It is more energetically stable than the other magnetic ones. The interstitial site on P-terminated surface is more energetically favorable one than the Al/Ga-terminated surface, or the other adsorbing sites. In the case of Mn-adsorbed Al/Ga-terminated surface, it is induced a strong coupling between Mn-3d and neighboring P-3p electrons. The holes of partially unoccupied minority Mn-3d state and majority (or minority) Al-3p or P-3p state are induced. Thus a high magnetic moment of Mn is sustained by holes-mediated double-exchange coupling. It is noticeable that the semiconducting and half-metallic characteristics of CH-AlGaP2:Mn thin film is disappeared.

• 한국결정성장학회지
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• 제5권1호
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• pp.78-86
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• 1995

유리기판 위에 electron beam으로 증착(EBE)된 CdTe film의 결정구조 및 전기 전도도와 광 전도도를 조사하였다. 그 구조는 거의 hexagonal phase 이었으며 Cubic phas가 약간 포함된 다결정이었다. 암 전기 전도도(dark electric conductivity)는 $1-^{-8} {\Omega}^{-1} cm^{-1}$정도이고 $300^{\circ}C$에서 1시간 동안 열처리하여 약간 증가되었다. 온도가 증가됨에 따른 전기 전도도로부터 계산된 활성화 에너지는 실온에서 증착된 film의 경우1.446 eV이었다. 흡수계수로부터 구한 광학적 band gap은 직접 천이(direct transition)인 경우 1.52 eV이었고 간접 천이(indirect transition)인 경우 1.44eV이었다. Film의 광전도도는 약$1-^{-8} {\Omega}^{-1} cm^{-1}$정도이고, 실온에서 대략 600 nm일때 가장 크다. 광전기 전도도는 850 nm에서 증가하기 시작하며 이는 CdTe 다결정의 활성화 에너지 (activation energy)인 1.446 eV와 근사하다.

• 마이크로전자및패키징학회지
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• 제24권2호
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• pp.37-41
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• 2017

$Cu_2O$는 초저가 태양전지의 흡수층으로 적용될 수 있는 물질 중 하나로 direct band gap($E_g={\sim}2.1eV$)을 갖고 있으며 최대 650 nm 파장의 빛을 흡수 할 수 있는 높은 흡수율을 가지고 있다. 또한 무독성, 풍부한 매장량으로 낮은 비용 등의 여러 장점을 가지며 간단하고 저렴한 방법으로 대량으로 제작이 가능하다. 본 연구에서 Au가 증착된 $SiO_2/Si$ 기판 위에 전착법을 통해 $Cu_2O$ 박막을 제작하였다. 우리는 용액의 pH와 작업전극에 인가되는 전위, 용액의 온도와 같은 공정조건을 바꾸어주었고 최종적으로 XRD와 SEM 사진 분석을 통해 박막의 특성을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.587-587
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• 2013

ZnS is well-known direct band gap II-VI semiconductor, and it attracts intense interest due to its excellent properties of luminescence which enable ZnS to have promising materials for optical, photonic and electronic devices. Especially, the emission wavelength of ZnS falls in the UV absorption band of most organic compoundsand biomolecules, thus it is envisaged that ZnS based devices may find applications in increasingly important fluorescence sensing. We have developed a facile and effective one-step process for the fabrication of single-crystalline and pure-wurtzite ZnS nanostructures possessing sharp band-edge emission at room-temperature having diverse length-to-width ratios. Each of nanostructures was composed of chemically pure, structurally uniform, single-crystalline, and defect-free ZnS. These features not only suppress trap or surface states emission centered at 420 nm, but also enhance UV band-edge emission centered at 327 nm, which give as-synthesized our ZnS nanostructures possible sharp UV emission at room temperature. The reaction medium consisting of mixed solvents such as hydrazine, ethylenediamine, and water as well as proper reaction time and temperature have played an important role in the crystallinity and optical properties of ZnS nanostructures. As-synthesized our ZnS nanostructures possessing sharp UV emission guarantee high potential for both fundamental research and technological applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.607-608
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• 2005

In this paper, author describe the undoped and $Co^{2+}$(0.5mole%) doped $Cd_4SnSe_6$ single crystals were grown by the chemical transport reaction(CTR) method. The grown single crystals crystallize in the monoclinic structure of space group Cc and have the direct band gap structure. The energy gaps of them are 1.68 eV for $Cd_4SnSe_6$ and 1.50 eV for $Cd_4SnSe_6:Co^{2+}$ at 300K respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• 제9권2호
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• pp.117-123
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• 2009

$Pb_{x}Cd_{1-x}S$ films are prepared in the composition range of 0.05${\leq}x{\leq}$0.25, using a chemical bath deposition growth technique under optimum conditions amide at realizing good photo response. The x-ray diffraction results show that the films are of PbS-CdS composite with individual CdS and PbS planes. The films exhibit two direct band gaps, 2.4 eV attributed to CdS, while the other varies continuously from 2.4 eV to 1.3 eV. The films surface morphology is smooth with crystallite, whose grain size increases with increasing mole fraction (x). The decrease in band gap with increase in lead concentration suggests inter-metallic compound of PbS (Eg=0.41 eV) with CdS (Eg=2.4 eV)

• 대한전기학회논문지:시스템및제어부문D
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• 제54권3호
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• pp.180-185
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• 2005

Microstrip antennas generally have a lot of advantages that are thin profile, lightweight, low cost, and conformability to a shaped surface application with integrated circuitry. In addition to military applications, they have become attractive candidates in a variety of commercial applications such as mobile satellite communications, the direct broadcast system (DBS), global positioning system (GPS), and remote sensing. Recently, many of the researches have been achieved for improving the impedance bandwidth of microstrip antennas. The basic form of the microstrip antenna, consisting of a conducting patch printed on a grounded substrate, has an impedance bandwidth of $1\~2\%$. For improvement of narrow bandwidth of microstrip patch, we were designed U-slot microstrip patch antenna in this paper. This antenna had wide bandwidth for all personal communication services (PCS) and IMT-2000. For the design of U-slot microstrip patch antenna using a finite difference time domain(FDTD) method. This numerical method could get the frequency property of U-slot patch antenna and the electromagnetic fields of slots.