• Current Optics and Photonics
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• v.1 no.2
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• pp.113-117
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• 2017

With the increasing use of high-power laser diode bars (LDBs) and stacked LDBs, the issue of thermal control has become critical, as temperature is related to device efficiency and lifetime, as well as to beam quality. To improve the thermal resistance of an LDB set, we propose and analyze a bypass heat sink with a top canopy structure for an LDB set, instead of adopting a thick submount. The thermal bypassing in the top-canopy structure is efficient, as it avoids the cross-sectional thermal saturation that may exist in a thick submount. The efficient thickness range of the submount in a typical LDB set is guided by the thermal resistance as a function of thickness, and the simulated bypassing efficiency of a canopy is higher than a simple analytical prediction, especially for thinner canopies.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.1
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• pp.1-9
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• 2014

In this paper, a reconfigurable polarization patch antenna that uses a Y-shaped feed is proposed. The proposed antenna consists of a square patch, a Y-shaped feeding structure, a PIN diode, and a bias circuit for diode operation. The structural symmetry/asymmetry of the feeding structure is determined by the on/off operation of the PIN diode that inserted into the side of one of the lines of the Y-shaped feeding structure. For the proposed reconfigurable antenna, the two microstrip lines of the feeding structure have the same length when the PIN diode operates in the on state, and the antenna exhibits linear polarization(LP). On the other hand, when the PIN diode operates in the off state, the length of one side line of the feeding structure is relatively shorter than that of the other line. Therefore, the antenna exhibits circular polarization(CP). From the measurement results, it is found that the proposed antenna exhibits good impedance matching and axial ratio. In addition, polarization switching can be easily achieved in the same operating band.

• Proceedings of the Optical Society of Korea Conference
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• 1999.08a
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• pp.222-223
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• 1999

The structural dependence of harmonic and intermodulation distortion characteristics in 1.55${\mu}{\textrm}{m}$ DFB-LCD were investigated. The linearity of 1.55${\mu}{\textrm}{m}$ DFB-LD was greatly improved by employing a partially corrugated structure.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.119-124
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• 2022

Top emission organic light-emitting diode (TEOLED) is commonly used because of high efficiency and good color purity than bottom - emission organic light-emitting device (BEOLED). Unlike BEOLED, TEOLED contain semitransparent metal cathode and capping layer. Because there are many characteristics to consider just simple thickness change, optimizing organic thickness of TEOLED for microcavity is difficult. So, in this study, we optimized Device capping layer at unoptimized micro-cavity structure TEOLED device. And we compare only capping layer with unoptimized microcavity structure can overcome optimized micro-cavity structure device. We used previous our optimized micro-cavity structure to compare each other. As a result, it has been found that the efficiency can be obtained almost the same or higher only capping layer, which is stacked on top of the device and controls only the thickness and refractive index, without complicated structural calculations. This means that higher efficiencies can be obtained more easily in laboratories with limited organic materials or when optimizing new structures etc.

• Korean Chemical Engineering Research
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• v.54 no.2
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• pp.274-277
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• 2016

Effects of interlayer insertion between multi-quantum well and electron blocking layer of green light emitting diode on diode performances were studied by device simulation. Dependence of Mg doping depth on characteristics of current-voltage, emitting wavelength, leakage current, and external quantum efficiency was investigated, and the optimum diode structure was presented. Device structures with interlayers doped in entire region and up to 30 nm showed remarkable reduced leakage current and effectively relieved efficiency droop which is one of the biggest challenges in green light emitting diode. Furthermore, the most improved characteristics in current-voltage and electroluminescence was obtained by the latter structure.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.401-410
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• 2017

In this work, we show that the excessive lattice heating problem due to parasitic pnp transistor action in the diode electrostatic discharge (ESD) protection device in the diode input protection circuit, which is favorably used in CMOS RF ICs, can be solved by adopting a symmetrical cathode structure. To explain how the recipe works, we construct an equivalent circuit for input human-body model (HBM) test environment of a CMOS chip equipped with the diode protection circuit, and execute mixed-mode transient simulations utilizing a 2-dimensional device simulator. We attempt an in-depth comparison study by varying device structures to suggest valuable design guidelines in designing the protection diodes connected to the $V_{DD}$ and $V_{SS}$ buses. Even though this work is based on mixed-mode simulations utilizing device and circuit simulators, the analysis given in this work clearly explain the mechanism involved, which cannot be done by measurements.

• Transactions on Electrical and Electronic Materials
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• v.3 no.4
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• pp.27-31
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• 2002

Thin film diode with reliable interfacial structure was fabricated by using multi-step anodic oxidation. The thickness of the oxide layer was preciously controlled with anodic voltage. Also, interfacial structure between oxide layer and top electrode was improved by applying post heat-treatment. The thin film diode showed symmetric and stable I-V characteristics after the post heat-treatment.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.69-72
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• 1990

For the effective heat transfering in Lser Diodes, Beam-Lead structure were introduced which is applicable to hybrid Optoelectronic Integrated Circuits. A 5-layer planar structure Laser Diode is fabricated and Beam-Lead is made by Au plating. And carrier was made by etching Si substrate and LD was mounted on a carrier. The thermal resistance was measured and we could certain that Beam-Lead structure behaves well as a heat sink.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1591-1593
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• 2008

The tubular field emission lamp (FEL) was developed using a wire type carbon-nano-structure emitter called CNX The luminous efficiency of the tubular FEL (diode type, diameter: ${\varphi}15.5mm$, length: 200mm) has already achieved around 45lm/W and we expect to achieve over 60lm/W within the year.

• Korean Journal of Optics and Photonics
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• v.15 no.4
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• pp.369-374
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• 2004

In this paper, we propose a new tunable laser diode structure. The laser diode consists of a sampled-grating distributed feedback laser diode monolithically integrated with a sampled-grating distributed-Brags-Reflector. For a specific design, the possibility of continuous/discrete wavelength tuning over 27nm is confirmed by a numerical analysis using a split-step time domain model. Because the laser diode can be directly coupled with optical fiber without the intervention of the passive section, the laser diode exhibits higher output power than the conventional laser diode.