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http://dx.doi.org/10.9713/kcer.2016.54.2.274

Evaluation of green light Emitting diode with p-type GaN interlayer  

Kim, Eunjin (Department of Chemical Engineering, Dankook University)
Kim, Jimin (Department of Chemical Engineering, Dankook University)
Jang, Soohwan (Department of Chemical Engineering, Dankook University)
Publication Information
Korean Chemical Engineering Research / v.54, no.2, 2016 , pp. 274-277 More about this Journal
Abstract
Effects of interlayer insertion between multi-quantum well and electron blocking layer of green light emitting diode on diode performances were studied by device simulation. Dependence of Mg doping depth on characteristics of current-voltage, emitting wavelength, leakage current, and external quantum efficiency was investigated, and the optimum diode structure was presented. Device structures with interlayers doped in entire region and up to 30 nm showed remarkable reduced leakage current and effectively relieved efficiency droop which is one of the biggest challenges in green light emitting diode. Furthermore, the most improved characteristics in current-voltage and electroluminescence was obtained by the latter structure.
Keywords
Light Emitting Diode; GaN; Efficiency Droop;
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Times Cited By KSCI : 2  (Citation Analysis)
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1 Meneghini, M., Trivellin, N., Meneghesso, G., Zanoni, E., Zehnder, U. and Hahn, B., "A Combined Electro-optical Method for the Determination of the Recombination Parameters in InGaN-based Light-emitting Diodes," J. Appl. Phys., 106, 114508(2009).   DOI
2 Laubsch, A., Sabathil, M., Baur, J., Peter, M. and Hahn, B., "High-Power and High-Efficiency InGaN-Based Light Emitters," IEEE Trans. Electron Devices, 57, 79(2010).   DOI
3 Knauer, A., Brunner, F., Kolbe, T., Kuller, V., Rodriguez, H., Einfeldt, S., Weyers, M. and Kneissl, M., "MOVPE Growth for UV-LEDs," Proc. SPIE, 7231, 72310G(2009).   DOI
4 Vampola, K. J., Iza, M., Keller, S., DenBaars, S. P. and Nakamura, S., "Measurement of Electron Overflow in 450 nm InGaN Lightemitting Diode Structures," Appl. Phys. Lett., 94, 061116(2009).   DOI
5 Baik, K. H., Kim, H., Kim, J., Jung, S. and Jang, S., "Nonpolar Light Emitting Diode with Sharp Near-ultraviolet Emissions Using Hydrothermally Grown ZnO on p-GaN," Appl. Phys. Lett., 103, 091107(2013).   DOI
6 Park, K. S., Swain, B., Kang, L. S., Lee, C. G., Uhm, S., Hong, H. S., Shim, J.-G. and Park, J.-J., "Study on Leaching Behavior for Recovery of Ga Metal from LED Scraps," App. Chem. Eng., 25(4), 414(2014).   DOI
7 Chung, W., Yu, H. J., Park, S. H., Chun, B.-H. and Kim, S. H., "Luminescence Properties of White LED with Different CdSe nanoparticles Phosphor Layer," Korean Chem. Eng. Res., 49(3), 320(2011).   DOI
8 Jun, Z., Zhuo, X.-J., Li, D.-W., Yu, L., Li, K., Zhang, Y.-W., Diao, J.-S., Wang, X.-F. and Li, S.-T., "Effect of Mg Doping in GaN Interlayer on the Performance of Green Light-Emitting Diodes," IEEE Photonics Technology Letters, 27(2), 117(2015).   DOI
9 Piprek, J., "Efficiency Droop in Nitride-based Light-emitting Diodes," Phys. Status Solidi A, 207(10), 2217(2010).   DOI
10 Mukai, T., Yamada, M. and Nakamura, S., "Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes," Jpn. J. Appl. Phys. 1, 38, 3976(1999).
11 Hsueh, T.-H., Sheu, J.-K., Lai, W.-C., Wang, Y.-T., Kuo, H.-C. and Wang, S.-C., "Improvement of the Efficiency of InGaN-GaN Quantum-Well Light-Emitting Diodes Grown With a Pulsed-Trimethylindium Flow Process," IEEE Photonics Technol. Lett., 21, 414(2009).   DOI