• Title/Summary/Keyword: diode laser

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The optical CT output signal characteristic according to a light source (광원에 따른 광CT의 출력특성 연구(2))

  • 전재일;정철우;안미경;박원주;이광식;김정배;김민수
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2003.11a
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    • pp.223-226
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    • 2003
  • 본 연구에서는 패러데이 효과(Faraday Effect)를 이용한 초고압 전력설비에서의 광전류 센서의 특성에 대한 기초 연구를 하였다. 광원은 Laser Diode(1310[nm])를 사용하고, 수신부는 PIN-Photodiode를 사용하였다. 센싱부로 사용한 광섬유는 single mode unjacked fiber를 사용하였고, 편광기를 사용하여 빛의 광학적인 편파면을 이용한 전류측정이 가능함을 확인할 수 있었다. 측정 결과에서는 전류에 따른 출력 신호가 나옴으로써 기존 문헌상의 결과와 동일하다는 것을 알 수 있었고 센싱부로 사용한 파이버의 길이에 따른 출력차이를 통해 파이버의 길이가 길수록 강도가 커진다는 것을 알 수 있었다. 또한 길이에 따라 출력의 차이뿐만 아니라 선형성까지도 차이가 난다는 것을 알 수 있었다. reference 값과 광전류센서의 출력 강도와의 오차율을 구했을 때 5[m] 10[m]길이의 광섬유 각각에 대해서 1000[A]이상의 값에서 각각 약 -0.9[%], -0.4[%]의 오차율을 보임을 확인했다. 여기서 인가한 전류값과 길이 즉, 감은 수에 따라 그 오차율이 점점 나아질 수 있다는 것을 알 수 있었다.

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High-linearity enhancement of optical transmitter using optoelectronic predistortion method (광전자 프리디스토션 기법을 적용한 광 송신기의 높은 선형성 향상 특성)

  • Lee, Tae-Kyeong;Moon, Yon-Tae;Choi, Young-Wan
    • 한국정보통신설비학회:학술대회논문집
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    • 2008.08a
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    • pp.296-299
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    • 2008
  • 최근 통신시스템과 핸드폰, PDA등의 통신기기들의 발전에 따라 사용자들은 높은 데이터 전송률과 고속의 통신서비스를 요구하고 있다. 이러한 상황에서 유 무선 통합 시스템인 Radio-over-Fiber(RoF) 시스템은 그 대안으로 대두되고 있다. 본 논문에서는 광전자소자를 선 왜곡 방식에 적용하여 광 송신기의 선형성을 향상시키는 방법을 제안하였다. 선 왜곡 방식은 두 개의 루프로 구성되어 있으며, 광 부품인 레이저 다이오드와 포토 다이오드 그리고 RF 부품인 위상변위기, 감쇄기, RF 결합/분배기, RF 증폭기를 사용하였다. 메인 루프에서 주 레이저 다이오드의 비선형성에 의해 발생된 왜곡신호성분은 보조 루프에서 부 레이저 다이오드를 이용하여 추출된 선 왜곡신호에 의해서 제거된다. 제안된 선형화 기법을 적용하여 2.4 GHz에서 선형화 기법을 적용하기 전보다 3차 상호변조 왜곡성분이 약 30dB 향상된 결과를 얻었다.

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Electrical Characteristics of Optical Current Transducer on Gas Insulated Switchgear (GIS용 광CT의 전기적 특성)

  • Lee, Su-Woong;Lee, Sung-Gap;Noh, Hyeon-Ji;Ahn, Byeong-Rib;Won, Woo-Sik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.319-320
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    • 2007
  • We researched basic study about electrical characteristics of Zinc Selenide (Faraday Cell), which is known for various temperature of good-performance, that applied measuring current or protecting instrument by Optical Current Transducer, on Gas Insulated Switchgear. Measuring System consists of VCSEL produced 850nm IR Laser, Pin Photo Diode made of GaAs surveyed as Optical Power Meter, and Optical Fibers specified Multi-mode. We observed optical output changes during measurement of currents increasing by 100[A] in range from 0[A] to 1,000[A] and set temperature condition increasing by $5[^{\circ}C]$ in a range from $30[^{\circ}C]\;to\;60[^{\circ}C]$.

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A Portable Surface Plasmon Resonance Biosensor for Rapid Detection of Salmonella typhimurium

  • Nguyen, Hoang Hiep;Yi, So Yeon;Woubit, Abdela;Kim, Moonil
    • Applied Science and Convergence Technology
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    • v.25 no.3
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    • pp.61-65
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    • 2016
  • Here, the rapid detection of Salmonella typhimurium by a portable surface plasmon resonance (SPR) biosensor in which the beam from a diode laser is modulated by a rotating mirror is reported. Using this system, immunoassay based on lipopolysaccharides (LPS)-specific monoclonal anti-Salmonella antibody was performed. For the purpose of orientation-controlled immobilization of antibodies on the SPR chip surface, the cysteine-mediated immobilization method, which is based on interaction between a gold surface and a thiol group (-SH) of cysteine, was adopted. As a result, using the portable SPR-based immunoassay, we detected S. typhimurium in the range from 10^7 CFU/mL to 10^9 CFU/mL within 1 hour. The results indicate that the portable SPR system could be potentially applied for general laboratory detection as well as on-site monitoring of foodborne, clinical, and environmental agents of interest.

Development of Micro-opto-mechanical Accelerometer using Optical fiber (광섬유를 이용한 미세 광 기계식 가속도 센서의 개발)

  • Lee, Seung-Jae
    • Journal of the Korean Society of Mechanical Technology
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    • v.13 no.4
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    • pp.93-99
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    • 2011
  • This paper presents a new type of optical silicon accelerometer using deep reactive ion etching (DRIE) and micro-stereolithography technology. Optical silicon accelerometer is based on a mass suspended by four vertical beams. A vertical shutter at the end of the mass can only moves along the sensing axis in the optical path between two single-mode optical fibers. The shutter modulates intensity of light from a laser diode reaching a photo detector. With the DRIE technique for (100) silicon, it is possible to etch a vertical shutter and beam. This ensures low sensitivity to accelerations that are not along the sensing axis. The microstructure for sensor packaging and optical fiber fixing was fabricated using micro stereolithography technology. Designed sensors are two types and each resonant frequency is about 15 kHz and 5 kHz.

AIGaInAs Seletive Area Growth using MOCVD for Spot Size Converter Laser Diode (Spot Size Converter 레이저 다이오드 제작을 위한 AIGaInAs 선택적 영역 성장)

  • 방영철;김현수;김준연;이은화;이중기;김태진;박성수;황선령;강중구
    • Proceedings of the Optical Society of Korea Conference
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    • 2003.07a
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    • pp.92-93
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    • 2003
  • 초고속 광전송 네트워크에 사용되는 광부품으로 단일 모드 광섬유와의 낮은 광 결합 손실을 가지는 레이저 다이오드 개발이 필수적이다. 이러한 레이저 다이오드의 요구되는 특성으로써 저가의 광부품 제작을 위해 thermoelectric cooler 없이 고온에서 안정된 동작을 하는 uncooled type에, 광 isolator 도움없이 광반사에 의한 광손실을 줄여야 한다. 이러한 요건을 충족시키기 위하여 선택적 영역 MOCVD성장을 이용한 InP/InGaAsP 계열의 SSC-LD(spot-size converter integrated LD)를 연구하여 왔다. (중략)

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Novel graphene-based optical MEMS accelerometer dependent on intensity modulation

  • Ahmadian, Mehdi;Jafari, Kian;Sharifi, Mohammad Javad
    • ETRI Journal
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    • v.40 no.6
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    • pp.794-801
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    • 2018
  • This paper proposes a novel graphene-based optical microelectromechanical systems MEMS accelerometer that is dependent on the intensity modulation and optical properties of graphene. The designed sensing system includes a multilayer graphene finger, a laser diode (LD) light source, a photodiode, and integrated optical waveguides. The proposed accelerometer provides several advantages, such as negligible cross-axis sensitivity, appropriate linearity behavior in the operation range, a relatively broad measurement range, and a significantly wider bandwidth when compared with other important contributions in the literature. Furthermore, the functional characteristics of the proposed device are designed analytically, and are then confirmed using numerical methods. Based on the simulation results, the functional characteristics are as follows: a mechanical sensitivity of 1,019 nm/g, an optical sensitivity of 145.7 %/g, a resonance frequency of 15,553 Hz, a bandwidth of 7 kHz, and a measurement range of ${\pm}10g$. Owing to the obtained functional characteristics, the proposed device is suitable for several applications in which high sensitivity and wide bandwidth are required simultaneously.

Effects of Transfer Gate on the Photocurrent Characteristics of Gate/Body-Tied MOSFET-Type Photodetector

  • Jang, Juneyoung;Seo, Sang-Ho;Kong, Jaesung;Shin, Jang-Kyoo
    • Journal of Sensor Science and Technology
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    • v.31 no.1
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    • pp.12-15
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    • 2022
  • In this study, we studied the effects of transfer gate on the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector. The GBT MOSFET-type photodetector has high sensitivity owing to the amplifying characteristic of the photocurrent generated by light. The transfer gate controls the flow of photocurrent by controlling the barrier to holes, thereby varying the sensitivity of the photodetector. The presented GBT MOSFET-type photodetector using a built-in transfer gate was designed and fabricated via a 0.18-㎛ standard complementary metal-oxide-semiconductor (CMOS) process. Using a laser diode, the photocurrent was measured according to the wavelength of the incident light by adjusting the voltage of the transfer gate. Variable sensitivity of the presented GBT MOSFET-type photodetector was experimentally confirmed by adjusting the transfer gate voltage in the range of 405 nm to 980 nm.

A COMPARISON OF FLUORESCENCE EFFECT OF VARIOUS LIGHT SOURCES IN EARLY ENAMEL CARIES (초기 우식 병소에서 광원에 따른 형광효과 비교)

  • Jeon, Jeong-Hoon;Lee, Nan-Young;Lee, Chang-Seop;Lee, Sang-Ho
    • Journal of the korean academy of Pediatric Dentistry
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    • v.32 no.4
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    • pp.611-619
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    • 2005
  • The aim of this study was to apply the quantitative light-induced fluorescence(QLF) and use of fluorescein-enhanced QLF method for quantitative assessment of early enamel demineralization in vitro, comparing effectiveness of light sources : argon laser, halogen lamp, light emitting diode (LED) and plasma arc lamp. Sixty extracted teeth were used, prepared by gentle pumicing and coating in an acid-resistant nail-varnish, except for an exposure to a demineralizing solution. Teeth were removed at regular intervals (24, 48 and 72hrs), air-dried and QLF image were taken. Mineral loss, as measured by difference of optical density, was recorded. For dyeenhanced QLF a 0.075% sodium fluorescein dye was applied after QLF examination and mineral loss was recorded. The following result were obtained : 1. Comparing with mean difference of optical density, plasma arc lamp was higher than other light sources in all group (p<0.05). 2. Comparing each group with mean difference of optical density, there was significant different using plasma are lamp and halogen lamp. 3. For use of dye-enhanced QLF, comparing with mean difference of optical density, plasma arc lamp were higher than other light sources in all group(p<0.05). 4. With this model dye-enhanced QLF compared with QLF in optical density, dye-enhanced QLF was higher than QLF in optical density. From the results presented in this paper, it was concluded that plasma light source was more effective compared with other light source for the detection and the quantification of early enamel caries.

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Design of a Single Chip CMOS Transceiver for the Fiber Optic Modules (광통신 모듈용 단일칩 CMOS 트랜시버의 설계)

  • 채상훈;김태련;권광호
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.2
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    • pp.1-8
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    • 2004
  • This paper describes the design of monolithic optical transceiver circuitry being used as a part of the fiber optic modules. It has been designed in 0.6 ${\mu}{\textrm}{m}$ 2-poly 3 metal silicon CMOS analog technology and operates at 155.52 Mbps(STM-1) data rates. It drives laser diode to transmit intensity modulated optical signal according to 155.52 Mbps electrical data from system. Also, it receives 155.52 Mbps optical data that transmitted from other systems and converts it to electrical data using photo diode and amplifier. To avoid noise and interference between transmitter and receiver on one chip, layout techniques such as special placement, power supply separation, guard ring, and protection wall were used in the design. The die area is 4 ${\times}$ 4 $\textrm{mm}^2$ and the estimated power dissipation is less than 900 ㎽ with a single 5 V supply.