• Korean Journal of Optics and Photonics
• /
• v.11 no.6
• /
• pp.434-440
• /
• 2000

We fabricated a high power Nd:YAG laser pumped by a 1 kW diode laser with a Lambertian-type diffusive reflector. Maximum cw power of 500 W with a slope efficiency of 49%, which corresponds to an optical efficiency of 46.7%, was obtained from a short linear resonator when a 5 mm rod was used. The efficiencies decreased when a 6 mm rod was used, due to the poor quality of the absorption distribution in the rod. The measured beam quality factor of 70, which is slightly smaller than the value calculated from the measured thermal focal lengths, shows that the absorption distribution in the rod is fairly uniform. iform.

• Korean Journal of Optics and Photonics
• /
• v.23 no.1
• /
• pp.42-51
• /
• 2012

In this paper, injection-locking characteristics versus active layer structures in Fabry-Perot laser diodes (FP-LD) are compared. TE and TM gain spectra and peak gains versus carrier density in polarized and unpolarized multiple quantum well structures and in an unpolarized bulk structure are calculated. The calculated gain parameters are applied to a time-domain large-signal model to simulate the injection-locking characteristics. The results show that RIN in unpolarized FD-LDs is about 3 dB lower than that in a polarized FP-LD and that the eye characteristics of the unpolarized FP-LD are much better than those of the polarized FP-LD.

• Journal of Advanced Navigation Technology
• /
• v.13 no.1
• /
• pp.34-40
• /
• 2009

The phase delay of output signal of APD(avalanche photo diode) caused by intensity of reflected light which comes from target. These difference of phase delay is an one of the main reason of measurement error, but there is no reasonable measurement meter and method to detect it. In this paper, to solve the problem, we propose and implement a method to measure the intensity of radiation. The method measures DC voltage which is proportional to the reflected intensity of radiation and come out from APD in receiver by realtime.

• Current Optics and Photonics
• /
• v.2 no.1
• /
• pp.27-33
• /
• 2018

We report the physical implementation of a tunable photonic microwave delay line filter based on injection locking of a single Fabry-Perot laser diode (FP-LD) to a reflective semiconductor optical amplifier (RSOA). The laser generates equally spaced multiple wavelengths and a single tapped-delay line can be obtained with a dispersive single mode fiber. The filter frequency response depends on the wavelength spacing and can be tuned by the temperature of the FP-LD varying lasing wavelength. For amplitude control of the wavelengths, we use gain saturation of the RSOA and the offset between the peak wavelengths of the FP-LD and the RSOA to decrease the amplitude difference in the wavelengths. From the temperature change of total $15^{\circ}C$, the filter, consisting of four flat wavelengths and two wavelengths with slightly lower amplitudes on both sides, has shown tunability of about 390 MHz.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.26 no.12
• /
• pp.2687-2694
• /
• 2002

A precision displacement measuring system is proposed, which can detect the 3-DOF translational motions of precision positioning devices. The optical system, which is composed of two diode-laser sources and two quadratic PSDs, is adapted to detect the position of the spherical reflector usually mounted on the platform of positioning devices. Each of the laser beams from diode-laser sources is reflected at the highly reflective surface of the sphere; hence, the 3-dimensional position of the sphere causes the directional change of the reflected beams, which is detected by the PSDs. In this paper, we define the relationships between the output values of the two PSDs and the 3-DOF translational motions of the sphere. Based on a deduced measurement model, we perform measurement simulation and evaluate the performance of the proposed measurement system: linearity, sensitivity, measuring range, and measurement error. The results show that the proposed measuring method is very useful for the measurement of the precision displacement of 3-DOF micro motions.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.207-207
• /
• 2010

Both ZnO and GaN have excellent physical properties in optoelectronic devices such as blue light emitting diode (LED), blue laser diode (LD), and ultra-violet (UV) detector. The ZnO/GaN heterostructure, which has a potential to achieve the cost efficient LED technology, has been fabricated by using radio frequency (RF) sputtering, pyrolysis, metal organic chemical vapor deposition (MOCVD), direct current (DC) arc plasmatron, and pulsed laser deposition (PLD) methods. Among them, the PLD system has a benefit to control the composition ratio of the grown film from the mixture target. A 500-nm-thick ZnO film was grown by PLD technique on c-plane GaN/sapphire substrates. The post annealing process was executed at some varied temperature between from $300^{\circ}C$ to $900^{\circ}C$. The morphology and crystal structural properties obtained by using atomic force microscope (AFM) and x-ray diffraction (XRD) showed that the crystal quality of ZnO thin films can be improved as increasing the annealing temperature. We will discuss the post-treatment effect on film quality (uniformity and reliability) of ZnO/GaN heterostructures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.5
• /
• pp.419-424
• /
• 2009

ZnO films doped with different contents of indium ($0.1{\sim}10$ at.%) were deposited on Si (111) substrate by Pulsed Laser Deposition (PLD). The structural, electrical and optical properties of the films were investigated using XRD, AFM, Hall and PL measurement. Results showed that un-doped ZnO film had (002) plane as the c-axis orientated growth, whereas indium doped ZnO films exhibited the peak of (002) and the weak (101) plane. In addition, in the indium doped ZnO films, the electron concentration is ten times higher than that of un-doped ZnO film, while the resistivity is ten times lower than that of un-doped ZnO film. The indium doped ZnO films have UV emission about 380 nm and show a red shift with increasing contents of indium. The I-V curve of the fabricated diode show the typical diode characteristics and have the turn on voltage of about 2 V.

• Korean Journal of Optics and Photonics
• /
• v.19 no.3
• /
• pp.219-223
• /
• 2008

To realize a widely tunable laser diode, a polymer coupled-ring reflector is hybrid- integrated with reflective semiconductor optical amplifier. Even though ring-ring and ring-bus coupling ratios are changed by fabrication errors in waveguide width and height, they remain very close to the single peak condition, ensuring high yield in fabrication. The tuning range is observed to be about 35 nm, maintaining the side mode suppression ratio of about 30 dB.

• Korean Journal of Optics and Photonics
• /
• v.4 no.1
• /
• pp.101-107
• /
• 1993

We carried out the useful theoretical calculation for the optimum design of a 1.48 ${\mu}m$ diode laser pumped E$r^{3+}$ doped fiber amplifier. The model we established is based on the rate equations of three level laser system and the overlap integral between fundamental mode L$P_{01}$ and E$r^{3+}$ doped area. We determined several fiber parameters (N.A., V value, fiber length, E$r^{3+}$ concentration, cutoff wavelength etc.) for the optimum design of a high optical gain. We found that our theoretical results are very useful to the design of E$r^{3+}$ doped fiber used in EDFA.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.477-478
• /
• 2006

Characteristics of InAs/GaAs quantum dot (QD) ridge laser diodes (LDs) are investigated for high-power $1.3\;{\mu}m$ applications. For QD ridge LDs with a $5-{\mu}m$-wide stripe and a 1-mm-long cavity, the emission wavelength of 1284.1 nm, the single-uncoated-facet CW output power as high as 90 mW, the external efficiency of 0.31 W/A and the threshold current density of $800\;mA/cm^2$ are obtained. The linewidth enhancement factor ($\alpha$-factor) is successfully measured to be between 0.4 and 0.6, which are about four times as small values with respect to conventional quantum well structure. It is possible that this result significantly reduce the filamentation of far-field profiles resulting in better beam quality for high power operation.