• 마이크로전자및패키징학회지
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• 제20권1호
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• pp.15-19
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• 2013

용해/분쇄법으로 제조한 n형 $Bi_2(Te_{0.9}Se_{0.1})_3$ 분말에 0.5 vol% $TiO_2$ 나노분말을 분산시켜 가압소결 후, $TiO_2$ 나노분말의 분산이 $Bi_2(Te_{0.9}Se_{0.1})_3$ 가압소결체의 열전특성에 미치는 영향을 분석하였다. $Bi_2(Te_{0.9}Se_{0.1})_3$ 가압소결체는 $2.93{\times}10^{-3}/K$의 최대 성능지수 및 1.02의 최대 무차원 성능지수의 우수한 열전특성을 나타내었다. 0.5 vol% $TiO_2$ 나노분말의 첨가에 의해 $Bi_2(Te_{0.9}Se_{0.1})_3$ 가압소결체의 최대 성능지수가 $2.09{\times}10^{-3}/K$로 감소하였으며, 최대 무차원 성능지수는 0.68로 저하하였다.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.682-683
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• 2006

Thermoelectric conversion efficiency of thermoelectric elements can be increased by using a structure combining n-type and p-type semiconductors. From the above point of view, attention was directed at ZnO as a candidate n-type semiconductor material and investigations were made. As the result, a dimensionless figure of merit ZT close to 0.28 (1073K) was obtained for specimens produced by the PCS (Pulse Current Sintering) method with addition of specified quantities of $TiO_2$, CoO, and $Al_2O_3$ to ZnO. It was found that the interstitial $TiO_2$ in the ZnO restrains the grain growth and CoO acts onto the bond between grains. The influence of the inclusion of $TiO_2$ and CoO onto the sintering behavior also was investigated.

• 한국분말재료학회지
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• 제20권5호
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• pp.345-349
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• 2013

Carbon nanotube-dispersed bismuth telluride matrix (CNT/$Bi_2Te_3$) nanopowders were synthesized by chemical routes followed by a ball-milling process. The microstructures of the synthesized CNT/$Bi_2Te_3$ nanopowders showed the characteristic microstructure of CNTs dispersed among disc-shaped $Bi_2Te_3$ nanopowders with as an average size of 500 nm in-plane and a few tens of nm in thickness. The prepared nanopowders were sintered into composites with a homogeneous dispersion of CNTs in a $Bi_2Te_3$ matrix. The dimensionless figure-of-merit of the composite showed an enhanced value compared to that of pure $Bi_2Te_3$ at the room temperature due to the reduced thermal conductivity and increased electrical conductivity with the addition of CNTs.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1198-1199
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• 2006

Type I clathrate $Ba_8Al_{16}Si_{30}$ was produced by arc melting and hot pressing and thermoelectric properties were investigated. Negative Seebeck coefficient at all temperatures measured, which means that the majority carriers are electrons. Electrical conductivity decreased by increasing temperature and thermal conductivity was 0.012 W/cmK at room temperature and dimensionless thermoelectric figure of merit (ZT) was 0.01 at 873K.

• 한국재료학회지
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• 제16권7호
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• pp.412-415
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• 2006

Te-doped $CoSb_3$ was prepared by the encapsulated induction melting, and its doping effects on the thermoelectric properties were investigated. Single phase ${\delta}-CoSb_3$ was successfully obtained by the subsequent annealing at 773 K for 24 hrs. Tellurium atoms acted as electron donors by substituting antimony atoms. Thermoelectric properties were remarkably improved by the appropriate doping. Dimensionless figure of merit was obtained to be 0.83 at 700K for the $CoSb_{2.8}Te_{0.2}$ specimen.

• 마이크로전자및패키징학회지
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• 제18권4호
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• pp.55-61
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• 2011

n형 $Bi_2(Te_{0.9}Se_{0.1})_3$ 분말을 기계적 합금화 공정으로 제조하고 텅스텐 분말을 분산시켜 $550^{\circ}C$에서 30분간 가압소결 후, 텅스텐 함량에 따른 열전특성을 분석하였다. 텅스텐 분말을 분산시키지 않은 $Bi_2(Te_{0.9}Se_{0.1})_3$ 가압소결체의 상온 출력인자는 $21.9{\times}10^{-4}$ $W/m-K^2$ 이었으며, 1 vol% 텅스텐 분말의 분산에 의해 상온 출력인자가 $30.5{\times}10^{-4}$ $W/m-K^2$로 증가하였다. 텅스텐 분말을 분산시키지 않은 $Bi_2(Te_{0.9}Se_{0.1})_3$ 가압소결체는 상온에서 0.52의 무차원 성능지수를 나타내었으며, 1 vol% 텅스텐 분말의 분산에 의해 무차원 성능지수가 0.95로 크게 향상되었다.

• 대한금속재료학회지
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• 제56권11호
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• pp.822-828
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• 2018

P-type Ce/Yb-filled skutterudites were synthesized, and their charge transport and thermoelectric properties were investigated with partial double filling and charge compensation. In the case of $(Ce_{1-z}Yb_z)_{0.8}Fe_4Sb_{12}$ without Co substitution, the marcasite ($FeSb_2$) phase formed alongside the skutterudite phase, but the generation of the marcasite phase was inhibited by increasing Co concentration. The electrical conductivity decreased with increasing temperature, exhibiting degenerate semiconductor behavior. The Hall and Seebeck coefficients were positive, which confirmed that the specimens were p-type semiconductors with holes as the major carriers. The carrier concentration decreased as the concentration of Ce and Co increased, which led to decreased electrical conductivity and increased Seebeck coefficient. The thermal conductivity decreased due to a reduction in electronic thermal conductivity via Co substitution, and due to decreased lattice thermal conductivity via double filling of Ce and Yb. $(Ce_{0.25}Yb_{0.75})_{0.8}Fe_{3.5}Co_{0.5}Sb_{12}$ exhibited the greatest dimensionless figure of merit (ZT = 0.66 at 823 K).

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.53-53
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• 2018

Thermoelectric materials can convert directly waste heat to electricity and vice versa. The improvement of the thermoelectric efficiency strongly depends on the dimensionless figure of merit, $ZT=S^2{\sigma}T/{\kappa}$, where S is the Seebeck coefficient, ${\sigma}$ is the electrical conductivity, T is the absolute temperature, and ${\kappa}$ is the thermal conductivity. The thermal conductivity consists of the electronic contribution (${\kappa}_e$) and phonon contribution (${\kappa}_{ph}$). It is very challenge to increase the power factor, $S^2{\sigma}$ and to reduce the thermal conductivity simultaneously because the power factor and electronic thermal conductivity are coupled. One strategy is to decrease the phonon thermal conductivity. The phonon thermal conductivity can be decreased by controlling the grain size and structural defects such as dislocations and twinning. In order to achieve enhancements in thermoelectric efficiency, microstructures that can form numerous interfaces have been investigated intensively for controlling the transport of charge carriers and heat carrying phonons. In this presentation, we report the heterogeneous microstructure of $Mg_2Si_{0.6}Sn_{0.4}$ thermoelectric materials and investigation of its influence on thermoelectric properties.

• 한국재료학회지
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• 제32권6호
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• pp.287-292
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• 2022

Magnesium-antimonide is a well-known zintl phase thermoelectric material with low band gap energy, earth-abundance and characteristic electron-crystal phonon-glass properties. The nominal composition Mg_3.8-xZn_xSb₂ (0.00 ≤ x ≤ 0.02) was synthesized by controlled melting and subsequent vacuum hot pressing method. To investigate phase development and surface morphology during the process, X-ray diffraction (XRD) and scanning electron microscopy (SEM) were carried out. It should be noted that an additional 16 at. % Mg must be added to the system to compensate for Mg loss during the melting process. This study evaluated the thermoelectric properties of the material in terms of Seebeck coefficient, electrical conductivity and thermal conductivity from the low to high temperature regime. The results demonstrated that substituting Zn at Mg sites increased electrical conductivity without significantly affecting the Seebeck coefficient. The maximal dimensionless figure of merit achieved was 0.30 for x = 0.01 at 855 K which is 30% greater than the intrinsic value. Electronic flow properties were also evaluated and discussed to explain the carrier transport mechanism involved in the thermoelectric properties of this alloy system.

• 한국재료학회지
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• 제16권6호
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• pp.377-381
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• 2006

Skutterudite $CoSb_3$ doped with nickel was prepared by encapsulated induction melting, and its doping effects on thermoelectric properties were investigated. Single phase ${\delta}-CoSb_3$ was successfully obtained by encapsulated induction melting and subsequent heat treatment at 773 K for 24 h. Nickel atoms acted as electron donors by substituting cobalt atoms. Thermoelectric properties were remarkably improved by appropriate heat treatment and doping, and they were closely related to phase transitions and dopant activation. The maximum ZT(dimensionless figure of merit) was achieved as 0.2 at 600 K for the $Co_{0.93}Ni_{0.07}Sb_3$ specimen.