• Proceedings of the Korean Vacuum Society Conference
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• 2005.02a
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• pp.98-98
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• 2005

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.196-197
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• 2003

전자의 스핀정보를 이용한 spintronics 기술이 발전하면서 상온 강자성 반도체에 대한 연구가 주목을 각광 받고 있다. 자성반도체에 대한 연구는 diluted magnetic semiconductor(DMS)에 대한 연구로 시작되었다 할 수 있다. 과거 DMS는 II-IV족 또는 III-V족 반도체에 Mn, Cr, Co, Fe 원소들을 도핑 시켜 제작하여 왔으나, 상온 이상에서 강자성 특성을 가지는 DMS을 제작하는 데는 실패하였다. 최근에 Dietl 팀이 mean field 이론을 이용하여 망간이 도핑된 ZnO가 실온이상의 Tc를 가질 수도 있을 것으로 예측하였다.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.96-97
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• 2002

최근에 스핀트로닉스 (spintronics) 분야에 대한 관심이 높아지면서 전기전도성과 자성을 동시에 지니는 자성반도체에 관한 연구가 다양하게 진행되어지고 있다. 특히 DMS (diluted magnetic semiconductor)는 상당한 관심을 가지고 많은 학자들에 의해 오랜 기간 연구되어져 왔고$^{1.3)}$ 특히, Matsumoto et al. $^{4.5)}$ 은 Co-doped anatase TiO$_2$ 박막을 LMBE (laser molecular beam epitaxy)로 제작하여 상온에서의 강자성을 발표한 바 있다. (중략)

• Journal of Magnetics
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• v.13 no.1
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• pp.23-29
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• 2008

The magnetic and other physical characteristics of $Mn_xSi_{1-x}Te$ have been investigated by electron magnetic resonance (EMR), X-ray diffraction (XRD) and other experiments. $Mn_xSi_{1-x}Te$ is found to have corundum structure for manganese contents up to 10% and also to be ferromagnetic for temperatures below 80 K. While ferromagnetic resonance signal coexists with the usual paramagnetic resonance signal, invariance of the g-factor inferred from the electron paramagnetic resonance signals throughout all temperature ranges clearly confirms that the manganese ions are in the electronic 3d5 state. The temperature dependence of EMR line-width is the same as other diluted magnetic semiconductors. From the EMR signals relaxation times $T_2$ and $T_1$ of $Mn_xSi_{1-x}Te$ compounds are estimated to be about $4.4{\times}10^{-10}s$ and $9.3{\times}10^{-8}s$ respectively and are found to vary slightly with temperature or composition change. Exchange narrowing of the EMR line-width becomes dominant for the sample in which the substitution ratio, x = 30%. For one sample, in which x = 0.5%, spin glass-like behavior is indicated by EMR signals for temperatures lower than 60 K. This behavior may authentic for samples within a certain range of x.

• Journal of the Korean Magnetics Society
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• v.15 no.3
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• pp.181-185
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• 2005

We have investigated the effects of Al codoping on the structural, electrical transport, and magnetic properties of oxide diluted magnetic semiconductor $Zn_{1-x}Cr_xO$ thin films prepared by reactive sputtering. Nondoped $Zn_{0.99}Cr_{0.01}O$ thin films show semiconducting transport behavior and weak ferromagnetic characteristic. The Al doping increases the carrier concentration and results in an decrease of resistivity and metal-insulator transition behavior. With increasing carrier concentration, the magnetic properties drastically change, exhibiting a remarkable increase of the saturation magnetization. These results show carrier-enhanced ferromagnetic order in Cr-doped ZnO.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.92-95
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• 2005

$Zn_{1-x}\;^{57}Fe_xO(x=0.01, 0.02, 0.03)$ compounds were fabricated using the solid-state reaction method. In order to determine magnetic behavior and ionic state of the doped transition metal ($^{57}Fe$) in ZnO, we carried out $M\ddot{o}ssbauer$ measurements at various temperatures ranging from 13 to 295 K. $M\ddot{o}ssbauer$spectra for $Zn_{0.97}\;^{57}Fe_{0.03}O$ at 4.2 K have shown the ferromagnetic phase (sextet), but the only paramagnetic phase (doublet) is seen at 295 K. The hysteresis loop below 77 K for $Zn_{0.97}\;^{57}Fe_{0.03}O$ indicated the coexistence of ferromagnetic and paramagnetic phases.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.112-112
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• 2003

최근 자성반도체(diluted magnetic semiconductor; DMS)를 이용한 소자 개발이 가긍해짐에 따라 국내외에서 활발한 연구가 이루어지고 있다. 본 연구실에서는 GaN-단일전구체를 이용하여 상온에서 자기적 특성을 나타내는 p-type GaMnN를 성장시켰다 극한 환경에서의 자성반도체 재료의 물성 변화를 알아보기 위해, 본 연구에서는 세계 최초로 중성자 빔의 조사에 따른 자성반도체의 구조적, 자기적 특성 및 열처리에 따른 특성 변화를 관찰 및 분석하였다. Molecular beam epitaxy(MBE)를 이용하여 Mn cell 온도가 각각 77$0^{\circ}C$, 94$0^{\circ}C$인 GaMnN 박막을 성장시켰다. 성장된 박막 시편에 한국원자력연구소 하나로 HTS공에서 중성자 빔을 각각 20min(4.17$\times$$10^{16}$n/$\textrm{cm}^2$), 24hour(3.0$\times$$10^{18}$n/$\textrm{cm}^2$)씩 조사하였다 중성자 빔을 조사한 시편은 진공분위기 하에서 100$0^{\circ}C$, 30초간 열처리하였다.(rapid thermal annealing;RTA, 승온속도: 8$^{\circ}C$/sec) 중성자 빔을 조사한 GaMnN 박막의 구조적인 특성은 X-ray diffraction(XRD) 측정을 통해 관찰하였고, 박막의 자기적 특성은 superconducting quantum interference device(SQUID)를 통해 측정하였다.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.94-95
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• 2002

Recently, we have seen a rapid advance in the evolving field of spin electronics (or spintronics). In spintronics, some feasibilities of new electronic applications utilizing spin degree of freedom have been explored. Diluted magnetic semiconductors (DMSs) are premising materials for spintronics because they have both charge and spin degree of freedom in a single substance. DMSs are refereed to semiconductor alloys in which some atoms are randomly substituted for by magnetic atoms. (omitted)

• Korean Journal of Materials Research
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• v.13 no.11
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• pp.737-741
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• 2003

Polycrystalline $Ti_{l-x}$ $Co_{x}$ $O_2$thin films on $SiO_2$ (200 nm)/Si (100) substrates were prepared using liquid-delivery metalorganic chemical vapor deposition. Microstructures and ferromagnetic properties were investigated as a function of doped Co concentration. Ferromagnetic behaviors of polycrystalline films were observed at room temperature, and the magnetic and structural properties strongly depended on the Co distribution, which varied widely with doped Co concentration. The annealed $Ti_{l-x}$ $Co_{x}$ $O_2$thin films with $x\leq$0.05 showed a homogeneous structure without any clusters, and pure ferromagnetic properties of thin films are only attributed to the X$l-x_{l-x}$ $Co_{x}$X$O_2$phases. On the other hand, in case of thin films above x = 0.05, Co-rich clusters formed in a homogeneous $Ti_{l-x}$ $Co_{x}$ $O_2$phase, and the overall ferromagnetic (FM) properties depended on both FMTCO and FMCo. Co-rich clusters with about 10-150 nm size decreased the value of Mr (the remanent magnetization) and increased the saturation magnetic field.

• Journal of Magnetics
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• v.10 no.3
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• pp.95-98
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• 2005

We report hole-induced ferromagnetism in diluted magnetic semiconductor $Zn_{0.99}Mn_{0.01}$ films grown on $SiO_2/Si$ substrates by reactive sputtering. The p-type conduction with hole concentration over $10^{18}\;cm^{-3}$ is achieved by P doping followed by rapid thermal annealing at $800^{\circ}C$ in a $N_2$ atmosphere. The p-type $Zn_{0.99}Mn_{0.01}O:P$ is carefully examined by x-ray diffraction and transmission electron microscopy. The magnetic measurements for $p-Zn_{0.99}Mn_{0.01}O:P$ clearly reveal ferromagnetic characteristics with a Curie temperature above room temperature, whereas those for $n-Zn_{0.99}Mn_{0.01}O:P$ show paramagnetic behavior. The anomalous Hall effect at room temperature is observed for the p-type film. This result strongly supports hole-induced room temperature ferromagnetism in $p-Zn_{0.99}Mn_{0.01}O:P$.