• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.139-143
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• 2017

N-type crystalline silicon solar cells have high metal impurity tolerance and higher minority carrier lifetime that increases conversion efficiency. However, junction quality between the boron diffused layer and the n-type substrate is more important for increased efficiency. In this paper, the current status and prospects for boron diffused layers in N-type crystalline silicon solar cell applications are described. Boron diffused layer formation methods (thermal diffusion and co-diffusion using $a-SiO_X:B$), boron rich layer (BRL) and boron silicate glass (BSG) reactions, and analysis of the effects to improve junction characteristics are discussed. In-situ oxidation is performed to remove the boron rich layer. The oxidation process after diffusion shows a lower B-O peak than before the Oxidation process was changed into $SiO_2$ phase by FTIR and BRL. The $a-SiO_X:B$ layer is deposited by PECVD using $SiH_4$, $B_2H_6$, $H_2$, $CO_2$ gases in N-type wafer and annealed by thermal tube furnace for performing the P+ layer. MCLT (minority carrier lifetime) is improved by increasing $SiH_4$ and $B_2H_6$. When $a-SiO_X:B$ is removed, the Si-O peak decreases and the B-H peak declines a little, but MCLT is improved by hydrogen passivated inactive boron atoms. In this paper, we focused on the boron emitter for N-type crystalline solar cells.

• 한국전기전자재료학회논문지
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• 제31권5호
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• pp.273-277
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• 2018

This research introduces the sputtered IZO thin film transistor (TFT) with solution-processed $Al_2O_3$ diffusion layer. IZO is one of the most commonly used amorphous oxide semiconductor (AOS) TFT. However, most AOS TFTs have many defects that degrade performance. Especially oxygen vacancy in the active layer. In previous research, aluminum was used as a carrier suppressor by binding the oxygen vacancy and making a strong bond with oxygen atoms. In this paper, we use a solution-processed $Al_2O_3$ diffusion layer to fabricate stable IZO TFTs. A double-layer solution-processed $Al_2O_3$-sputtered IZO TFT showed better performance and stability, compared to normal sputtered IZO TFT.

• 한국주조공학회지
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• 제28권3호
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• pp.119-123
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• 2008

Wear test on two die steels for aluminum die casting was carried out by dipping and rotating the specimens into the molten aluminum maintained $680^{\circ}C{\sim}780^{\circ}C$. The rotating speed of the specimen was $4.5rpm{\sim}20.0rpm$. Diffusion layer was formed between the die steel and molten aluminum, and became thicker with dipping time. Wear rate was not proportional with the thickness of the diffusion layer, but was closely related to the density of the diffusion layer. Wear rate was little affected by the kind of die steel and by the microstructure such as martensite, tempered martensite, and pearlite. Specimen with nitrided surface showed good wear resistance, and its wear rate was decreased with increase in the thickness of nitrided layer. While whole surface was worn in heat treated specimens, wear of nitrided specimens was proceeded by pitting partially.

• 한국환경과학회지
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• 제2권1호
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• pp.17-26
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• 1993

The layer that is directly influenced by ground surface is called the atmospheric boutsdary layer in comparison with the free atmosphere of higher layer. In the boundary layer, the changes of wind, temperature and coefficient of turbulent diffusion in altitude are large and have great influences an atmospheric diffusion. The purpose of this paper is to express the structure and characteristics of development of mixed layer by using laboratory experiment and numerical simulation. Laboratory experiment using water tank are performed that closely simulate the process of break up of nocturnal surface inversion above heated surface and its phenomena are analyzed by the use of horizontally averaged temperature which is observed. The result obtained from the laboratory experiment is compared with theoretical ones from ; \textsc{k}-\varepsilon numerical model. The results are summarized as follows. 1) The horizontally averaged temperature was found to vary smoothly with height and the mixed layer developed obviously being affected by the convection. 2) The mean height of mixed layer may be predicted as a function of time, knowing the mean initial temperature gradient. The experimental values are associated well with the theoretical values computed for value of the universal constant $C_r$= 0.16, our $C_r$ value is little smaller than the value found by Townsend and Deardoru et al.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.54-55
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• 2010

Vacancy defects in graphene can be created by electron or ion irradiation and those induce ripples which can change the electronic properties of graphene. Recently, the formation of defect structures such as vacancy defects and non-hexagonal rings has been reported in the high resolution transmission electron microscope (HR-TEM) of reduced graphene oxide [1]. In those HR-TEM images, it is noticed that the dislocations with pentagon-heptagon (5-7) pairs are formed and diffuses. Interestingly, it is also observed that two 5-7 pairs are separated and diffuse far away from each other. The separation of 5-7 pairs has been known to be due to their self-diffusion. However, from our tight-binding molecular dynamics simulation, it is found that the separation of 5-7 pairs is due to the diffusion of single vacancy defects and coalescence with 5-7 pairs. The diffusion and coalescence of single vacancy defects is too fast to be observed even in HR-TEM. We also implemented Van der Waals interaction in our tight-binding carbon model to describe correctly bi-layer and multi-layer graphene. The compressibility of graphite along c-axis in our tight-binding calculation is found to be in excellent agreement with experiment. We also discuss the difference between single layer and bi-layer graphene about vacancy diffusion and reconstruction.

• 한국재료학회지
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• 제13권2호
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• pp.101-105
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• 2003

In this study, we have investigated the availability of the electroless Ni-B plating for a diffusion barrier of the bus electrode. The Ni-B layer of 1$\beta$: thick was electroless deposited on the electroplated Cu bus electrode for AC plasma display. The layer was to encapsulate Cu bus electrode to prevent from its oxidation and to serve as a diffusion barrier against Cu contamination of the transparent dielectric layer in AC plasma display. The microstructure of the as-plated barrier layer was made of an amorphous phase and the structure was converted to crystalline at about 30$0^{\circ}C$. The concentration of boron was about 5∼6 wt.% in the electroless Ni-B deposit regardless of DMAB concentration. The electroless Ni-B deposit was coated on the surface of the electroplated Cu bus electrode uniformly. And the electroless Ni-B plating was found to be an appropriate process to form the diffusion barrier.

• 한국재료학회지
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• 제12권9호
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• pp.718-723
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• 2002

$Ti_{1-x}$ $Al_{ x}$N thin films as barrier layer for memory devices application were deposited by reactive magnetron sputtering. The crystallinity, micro-structure, oxidation resistance and oxidation mechanism of films were investigated as a function of Al content. Lattice parameter and grain size of thin films were decreased with increasing the Al content Oxidation of the film with higher Al content is slow and then, total oxide thickness is thinner than that of lower Al content film. Oxide layer formed on the surface is AlTiNO layer. Oxidation of $Ti_{1-x}$ /$Al_{x}$ N barrier layer is diffusion limited process and thickness of oxide layer with oxidation time increased with a parabolic law. The activation energy of oxygen diffusion, Ea and diffusion coefficient, D of $Ti_{0.74}$ /X$0.74_{0.26}$N film is 2.1eV and $10^{-16}$ ~$10^{-15}$ $\textrm{cm}^2$/s, respectively. $_Ti{1-x}$ /$Al_{x}$ XN barrier layer showed good oxidation resistance.

• 한국재료학회지
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• 제31권6호
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• pp.331-338
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• 2021

Ti-Al-Si target and Cr-Si target are sputtered alternately to develop a multi-layered nitride coating on a steel mold to improve die-casting lifetime. Prior to the multi-layer deposition, a CrN layer is developed as a buffer layer on the mold to suppress the diffusion of reactive elements and enhance the cohesive strength of the multi-layer deposition. Approximately 50 nm CrSiN and TiAlSiN layers are deposited layer by layer, and form about three ㎛-thickness of multi-layered coating. From the observation of the uncoated and coated steel molds after the acceleration experiment of liquid metal injection casting, the uncoated mold is severely eroded by the adhesion of molten metallic glass. On the other hand, the multi-layer coating on the mold prevents element diffusion from the metallic glass and mold erosion during the experiment. The multi-layer structure of the coating transforms the nano-composite structured coating during the acceleration test. Since the nano-composite structure disrupts element diffusion to molten metallic glass, despite microstructure changes, the coating is not eroded by the 1,050 ℃ molten metallic glass.

• ETRI Journal
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• 제23권4호
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• pp.158-167
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• 2001

We examine the diffusion layers of some block ciphers referred to as substitution-permutation networks. We investigate the practical and provable security of these diffusion layers against differential and linear cryptanalysis. First, in terms of practical security, we show that the minimum number of differentially active S-boxes and that of linearly active S-boxes are generally not identical and propose some special conditions in which those are identical. We also study the optimal diffusion effect for some diffusion layers according to their constraints. Second, we obtain the results that the consecutive two rounds of SPN structure provide provable security against differential and linear cryptanalysis, i.e., we prove that the probability of each differential (resp. linear hull) of the consecutive two rounds of SPN structure with a maximal diffusion layer is bounded by $p^n(resp.q^n)$ and that of each differential (resp. linear hull) of the SDS function with a semi-maximal diffusion layer is bounded by $p^{n-1}(resp. q^{n-1})$, where p and q are maximum differential and linear probabilities of the substitution layer, respectively.

• Wind and Structures
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• 제3권1호
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• pp.11-21
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• 2000

This paper presents results of modeling of the passive contaminant diffusion from a continuous line finite-size source located on the underlying surface of a neutral near-ground atmospheric layer obtained by using the non-local two-parameteric turbulence model and the transport equation of mean concentration. In the proposed diffusion model the turbulent diffusion coefficient changes not only with the vertical coordinate but also with the distance downstream from the source according to the experimental data. The results of the modeling reproduce structural features of the concentration field.