• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.811-813
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• 2003

We investigated the electrical properties of self-assembled (4,4'-Di(ethynylphenyl)-2'-nitro-1-thioacetylbenzene), which has been well known as a conducting molecule having possible application to molecular level negative differential resistance(NDR)[1]. Generally, the phenomenon of NDR can be characterized by the decreasing current with the increasing voltage[2]. To deposit the SAM layer onto gold electrode, we transfer the prefabricated nanopores into a 1mM self-assembly molecules in THF solution. Au(111) substrates were prepared by ion beam sputtering method of gold onto the silicon wafer. As a result, we measured the voltage-current properties and confirmed the negative differential resistance properties of self-assembled organic thin film and measured, using Scanning Tunneling Microscopy(STM).

• Journal of Electrical Engineering and Technology
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• v.5 no.3
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• pp.451-461
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• 2010

Electric vehicles (EVs) require fast torque response and high drive efficiency. This paper describes a control scheme of fuzzy direct torque control of permanent magnet synchronous motor for EVs. This control strategy is extensively used in EV application. With direct torque control (DTC), the electromagnetic torque and stator flux can be estimated using the measured stator voltages and currents. The estimation depends on motor parameters, except for the stator resistance. The variation of stator resistance due to changes in temperature or frequency downgrades the performance of DTC, which is controlled by introducing errors in the estimated flux linkage vector and the electromagnetic torque. Thus, compensation for the effect of stator resistance variation becomes necessary. This work proposes the estimation of the stator resistance and its compensation using a proportional-integral estimation method. An electronic differential has been also used, which has the advantage of replacing loose, heavy, and inefficient mechanical transmission and mechanical differential with a more efficient, light, and small electric motors that are directly coupled to the wheels through a single gear or an in-wheel motor.

• Journal of Korea Society of Digital Industry and Information Management
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• v.4 no.4
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• pp.21-29
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• 2008

The DC characteristics of GaAS Gunn diode are investigated as a preliminary study on the planar grade gap injector GaAs Gunn diode which is the transferred electron device with high output power and dc-rf conversion efficiency. The Gunn devices we fabricated were confirmed to have the DC characteristics of negative differential resistance(NDR). We discussed the nature of the NDR effect, including the electron intervalley transfer; the NDR effect was examined for six different cathode radii.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.7
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• pp.1687-1692
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• 2010

In this paper, we research the method for write quality improvement by temperature characteristic of Laser diode for optical recording. Differential Resistance of Blu-ray laser diode is changed by temperature. We analyze the effect of the change of the differential resistance in low temperature and propose the method for the write quality improvement.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.546-550
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• 2013

We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over $10^4$ at low operation voltage of 0.5 V in a single peak and valley current.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.10a
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• pp.503-505
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• 2009

In this paper, we research the method for write quality improvement by temperature characteristic of Laser diode for optical recording. Differential Resistance of Blu-ray laser diode is changed by temperature. We analyze the effect of the change of the differential resistance and propose the method for the write quality improvement.

• Mycobiology
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• v.30 no.2
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• pp.88-92
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• 2002

Rehmannia glutinosa is a perennial medicinal plant belonging to the family Scrophulariaceae with more than 300 species known in the world, especially in temperate regions. Its roots have been used widely in Korea for medicinal purposes. However, it is commonly infected by various pathogens during storage, causing great damage to the roots, and impedes the intensive farming of the crop. Therefore, an attempt has been made to isolate and screen a resistance gene against the pathogen Fusarium oxysporum using differential display. We treated salicylic acid(SA), and isolated a resistance gene that responds to SA. As a result, we found that SA was involved in plant defense mechanism in pathogenicity tests with SA treated and non-treted plants, and we isolated a partial PR-la gene through differential display polymerase chain reaction(DD-PCR) method.

• Research in Plant Disease
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• v.23 no.3
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• pp.249-255
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• 2017

The rice blast fungus is a representative model phytopathogenic fungus in which Gene-for-Gene interaction with host rice is applicable. After 1980, eight differential varieties have been constructed and classified to analyze the race of rice blast isolates in Korea. However, since there is limited information about the genetic background of rice blast resistance genes within the Korean differentials, scientific analysis on the emergence of new race or resistance break down was difficult. Recently, a differential system has been developed using monogenic resistance lines to understand the interactions of pathogen race and rice resistance genes. In this study, a total of 50 isolates were selected from four different races isolated in Korea, and they were inoculated into monogenic lines. As a result, the isolates in the same race classified by the Korean differential system reacted differently in single monogenic lines. This suggests that the isolates categorized as the same race group contains different avirulence genes and furthermore, it is presumed that the Korean differential system is difficult to provide useful information for breeding program. For this reason, introduction of differential system using monogenic resistance lines is required in addition to the current system.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.3
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• pp.161-166
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• 1999

We investigate the device characteristics of the separated shorted-anode LIGBT (SSA-LIGBT), which suppresses effectively the negative differential resistance regime, by 2-dimensional numerical simulation. The SSA-LIGBT increases the pinch resistance by employing the highly resistive n-drift region as an electron conduction path instead of the lowly resistive n buffer region of the conventional SA-LIGBT. The negative differential resistance regime of the SSA-LIGBT is significantly suppressed as compared with that of the conventional SA-LIGBT. The SSA-LIGBT shows the lower forward voltage drop than that of the conventional SA-LIGBT.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.237-237
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• 1999

We have observed that a stable and reproducible Negative Differential Resistance(NDR) is induced by external microwave at low power in Nb/AlO$_x$/Al/Alo$_x$/Nb junctions. To study the erratic and pozzling NDR observations we have simulated Stewart-McCumber model in the region. Experimental results and simulation results will be presented with a discussion to draw a dynamic interpreration of the NDR.