Journal of Korea Society of Digital Industry and Information Management (디지털산업정보학회논문지)

Korea Society of Digital Industry and Information Management (디지털산업정보학회)
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Development of GaAs Gunn diodes and Characterization of Negative Differential Resistance for Millimeter-wave Oscillator

밀리미터파 발진용 GaAs Gunn 다이오드 소자의 개발과 음성미분저항

  • Received : 2008.11.18
  • Accepted : 2008.12.01
  • Published : 2008.12.30
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Abstract

The DC characteristics of GaAS Gunn diode are investigated as a preliminary study on the planar grade gap injector GaAs Gunn diode which is the transferred electron device with high output power and dc-rf conversion efficiency. The Gunn devices we fabricated were confirmed to have the DC characteristics of negative differential resistance(NDR). We discussed the nature of the NDR effect, including the electron intervalley transfer; the NDR effect was examined for six different cathode radii.

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