• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.811-813
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• 2003

We investigated the electrical properties of self-assembled (4,4'-Di(ethynylphenyl)-2'-nitro-1-thioacetylbenzene), which has been well known as a conducting molecule having possible application to molecular level negative differential resistance(NDR)[1]. Generally, the phenomenon of NDR can be characterized by the decreasing current with the increasing voltage[2]. To deposit the SAM layer onto gold electrode, we transfer the prefabricated nanopores into a 1mM self-assembly molecules in THF solution. Au(111) substrates were prepared by ion beam sputtering method of gold onto the silicon wafer. As a result, we measured the voltage-current properties and confirmed the negative differential resistance properties of self-assembled organic thin film and measured, using Scanning Tunneling Microscopy(STM).

• Journal of Electrical Engineering and Technology
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• 제5권3호
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• pp.451-461
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• 2010

Electric vehicles (EVs) require fast torque response and high drive efficiency. This paper describes a control scheme of fuzzy direct torque control of permanent magnet synchronous motor for EVs. This control strategy is extensively used in EV application. With direct torque control (DTC), the electromagnetic torque and stator flux can be estimated using the measured stator voltages and currents. The estimation depends on motor parameters, except for the stator resistance. The variation of stator resistance due to changes in temperature or frequency downgrades the performance of DTC, which is controlled by introducing errors in the estimated flux linkage vector and the electromagnetic torque. Thus, compensation for the effect of stator resistance variation becomes necessary. This work proposes the estimation of the stator resistance and its compensation using a proportional-integral estimation method. An electronic differential has been also used, which has the advantage of replacing loose, heavy, and inefficient mechanical transmission and mechanical differential with a more efficient, light, and small electric motors that are directly coupled to the wheels through a single gear or an in-wheel motor.

• 디지털산업정보학회논문지
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• 제4권4호
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• pp.21-29
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• 2008

The DC characteristics of GaAS Gunn diode are investigated as a preliminary study on the planar grade gap injector GaAs Gunn diode which is the transferred electron device with high output power and dc-rf conversion efficiency. The Gunn devices we fabricated were confirmed to have the DC characteristics of negative differential resistance(NDR). We discussed the nature of the NDR effect, including the electron intervalley transfer; the NDR effect was examined for six different cathode radii.

• 한국정보통신학회논문지
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• 제14권7호
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• pp.1687-1692
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• 2010

본 논문에서는 Blu-ray 디스크의 기록을 위한 Laser Diode의 온도특성을 고려한 기록품질의 개선방법에 대해 연구했다. 주변 온도변화에 따라 Blu-ray Laser Diode는 전류-전압 관계로부터 미분저항이 변화하게 되는데 이러한 미분저항이 저온에서 기록품질에 미치는 영향에 대해 분석하고 개선하는 방법을 제안한다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권6호
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• pp.546-550
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• 2013

We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over $10^4$ at low operation voltage of 0.5 V in a single peak and valley current.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2009년도 추계학술대회
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• pp.503-505
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• 2009

본 논문에서는 Blu-ray 디스크의 기록을 위한 Laser Diode의 온도특성을 고려한 기록품질의 개선방법에 대해 연구했다. 주변 온도변화에 따라 Blu-ray Laser Diode는 전류-전압 관계로부터 미분저항이 변화하게 되는데 이러한 미분저항이 기록품질에 미치는 영향에 대해 분석하고 개선하는 방법을 제안한다.

• Mycobiology
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• 제30권2호
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• pp.88-92
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• 2002

Rehmannia glutinosa is a perennial medicinal plant belonging to the family Scrophulariaceae with more than 300 species known in the world, especially in temperate regions. Its roots have been used widely in Korea for medicinal purposes. However, it is commonly infected by various pathogens during storage, causing great damage to the roots, and impedes the intensive farming of the crop. Therefore, an attempt has been made to isolate and screen a resistance gene against the pathogen Fusarium oxysporum using differential display. We treated salicylic acid(SA), and isolated a resistance gene that responds to SA. As a result, we found that SA was involved in plant defense mechanism in pathogenicity tests with SA treated and non-treted plants, and we isolated a partial PR-la gene through differential display polymerase chain reaction(DD-PCR) method.

• 식물병연구
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• 제23권3호
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• pp.249-255
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• 2017

벼 도열병은 벼를 재배하는 지역에서는 가장 중요한 병 중 하나이다. 특히, 벼 도열병균은 기주인 벼와 Gene-for-Gene 상호작용이 적용 가능한 대표적인 모델 식물병원성 곰팡이다. 우리나라는 1980년 이래로 벼 도열병균의 레이스를 분석하기 위해 8개의 판별 품종을 이용한 시스템을 구축하여 분류하였다. 그러나 이 판별 품종이 어떤 저항성 유전자를 가지고 있는지에 관해 명확한 정보가 없어 새로운 레이스의 출현이나 병 저항성 붕괴 등에 대하여 과학적인 분석이 어려웠다. 최근 병원균의 레이스와 벼의 저항성 유전자의 상호작용 이해를 돕기 위해 LTH 품종에 단인자 저항성 계통을 각각 다르게 도입한 판별시스템이 개발되었다. 본 연구에서는 우리나라의 1995년부터 2015년까지 분리된 4개의 다른 레이스 KI101, KI201, KI401 및 KJ101로부터 총 50개 균주를 선발하여 LTH 품종에 기반한 단인자 저항성 계통에 접종하여 그 결과를 이전 레이스와 비교 분석해 보았다. 그 결과 한국형 판별시스템으로 분류된 동일 레이스내의 균주들이 단인자 계통에서 서로 다른 반응을 보였다. 이 결과 동일 레이스에 속하는 균주들이 서로 다른 비병원성 유전자를 지닌 것을 의미하며, 더 나아가 새로운 저항성 벼 품종 육종에 유용한 정보를 제공하기 어려울 것으로 추정되었다. 이 연구 결과 현재의 판별시스템과 더불어 단인자 저항성 품종을 통한 판별시스템 도입이 요구되었다. 이 연구 결과는 향후 한국의 판별시스템 개발에 기초 자료로 활용 될 수 있을 것이다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권3호
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• pp.161-166
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• 1999

We investigate the device characteristics of the separated shorted-anode LIGBT (SSA-LIGBT), which suppresses effectively the negative differential resistance regime, by 2-dimensional numerical simulation. The SSA-LIGBT increases the pinch resistance by employing the highly resistive n-drift region as an electron conduction path instead of the lowly resistive n buffer region of the conventional SA-LIGBT. The negative differential resistance regime of the SSA-LIGBT is significantly suppressed as compared with that of the conventional SA-LIGBT. The SSA-LIGBT shows the lower forward voltage drop than that of the conventional SA-LIGBT.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.237-237
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• 1999

We have observed that a stable and reproducible Negative Differential Resistance(NDR) is induced by external microwave at low power in Nb/AlO$_x$/Al/Alo$_x$/Nb junctions. To study the erratic and pozzling NDR observations we have simulated Stewart-McCumber model in the region. Experimental results and simulation results will be presented with a discussion to draw a dynamic interpreration of the NDR.