• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.47-54
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• 2006

This work proposes a dual-channel 6b 1GS/s ADC for ultra wide-band communication system applications. The proposed ADC based on a 6b interpolated flash architecture employs wide-band open-loop track-and-hold amplifiers, comparators with a wide-range differential difference pre-amplifier, latches with reduced kickback noise, on-chip CMOS references, and digital bubble-code correction circuits to optimize power, chip area, and accuracy at 1GS/s. The ADC implemented in a 0.18um 1P6M CMOS technology shows a signal-to-noise-and-distortion ratio of 30dB and a spurious-free dynamic range of 39dB at 1GS/s. The measured differential and integral non-linearities of the prototype ADC are within 1.0LSB and 1.3LSB, respectively. The dual-channel ADC has an active area of $4.0mm^2$ and consumes 594mW at 1GS/s and 1.8V.

• Journal of IKEEE
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• v.2 no.2 s.3
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• pp.278-284
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• 1998

This paper describes a l0b CMOS A/D converter (ADC) for HDTV applications. The proposed ADC adopts a typical multi-step pipelined architecture. The proposed circuit design techniques are as fo1lows: A selective channel-length adjustment technique for a bias circuit minimizes the mismatch of the bias current due to the short channel effect by supply voltage variations. A power reduction technique for a high-speed two-stage operational amplifier decreases the power consumption of amplifiers with wide bandwidths by turning on and off bias currents in the suggested sequence. A typical capacitor scaling technique optimizes the chip area and power dissipation of the ADC. The proposed ADC is designed and fabricated in s 0.8 um double-poly double-metal n-well CMOS technology. The measured differential and integral nonlinearities of the prototype ADC show less than ${\pm}0.6LSB\;and\;{\pm}2.0LSB$, respectively. The typical ADC power consumption is 119 mW at 3 V with a 40 MHz sampling rate, and 320 mW at 5 V with a 50 MHz sampling rate.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.11
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• pp.48-56
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• 2011

Novel class-A bipolar current conveyor($CCII{\pm}$) with differential current output and its application to output current controllable CCII+ for electronic tuning systems are designed. The $CCII{\pm}$ is consists of conventional CCII+ and complementary cross current sources. The CCII+ with controllable the output current consists of the $CCII{\pm}$ and a current gain amplifier with single-ended current output. The simulation result shows that the $CCII{\pm}$ has current input impedance of $1.9{\Omega}$ and a good linearity for voltage and current follower. The proposed CCII+ has 3-dB cutoff frequency of 10MHz for the range over bias control current $100{\mu}A$ to 10mA. The range of output current control is four decade. The power dissipation of the CCII+ is 4.5mW at supply voltage of ${\pm}2.5V$.

• Journal of IKEEE
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• v.20 no.2
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• pp.192-195
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• 2016

In this paper, we present a nanopower CMOS bandgap voltage reference working in sub-threshold region without resisters and bipolar junction transistors (BJT). Complimentary to absolute temperature (CTAT) voltage generator was realized by using two n-MOSFET pair with body bias circuit to make a sufficient amount of CTAT voltage. Proportional to absolute temperature (PTAT) voltage was generated from differential amplifier by using different aspect ratio of input MOSFET pair. The proposed circuits eliminate the use of resisters and BJTs for the operation in a sub-1V low supply voltage and for small die area. The circuits are implemented in 0.18um standard CMOS process. The simulation results show that the proposed sub-BGR generates a reference voltage of 290mV, obtaining temperature coefficient of 92 ppm/$^{\circ}C$ in -20 to $120^{\circ}C$ temperature range. The circuits consume 15.7nW at 0.63V supply.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.10 no.5
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• pp.455-461
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• 2017

In this paper, a local DL (Data Line) sensing method with smaller parasitic capacitance replacing the previous distributed DB sensing method with large parasitic capacitance is proposed to reduce the time to transfer BL (Bit Line) voltage to DL in the read mode. A new BL switching circuit turning on NMOS switches faster is also proposed. Furthermore, the access time is reduced to 35.63ns from 40ns in the read mode and thus meets the requirement since BL node voltage is clamped at 0.6V by a DL clamping circuit instead of precharging the node to VDD-VT and a differential amplifier are used. The layout size of the designed 512Kb EEPROM memory IP based on a $0.13{\mu}m$ BCD is $923.4{\mu}m{\times}1150.96{\mu}m$ ($=1.063mm^2$).

• Journal of information and communication convergence engineering
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• v.10 no.1
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• pp.85-90
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• 2012

A 40-MS/sec 10-bit pipelined analog to digital converter (ADC) with a 1.2 Vpp differential input signal is proposed. The implemented pipelined ADC consists of eight stages of 1.5 bit/stage, one stage of 2 bit/stage, a digital error correction block, band-gap reference circuit & reference driver, and clock generator. The 1.5 bit/stage consists of a sub-ADC, digital to analog (DAC), and gain stage, and the 2.0 bit/stage consists of only a 2-bit sub-ADC. A bootstrapped switch with a constant resistance is proposed to improve the linearity of the input switch. It reduces the maximum VGS variation of the conventional bootstrapped switch by 67%. The proposed bootstrapped switch is used in the first 1.5 bit/stage instead of a sample-hold amplifier (SHA). This results in the reduction of the hardware and power consumption. It also increases the input bandwidth and dynamic performance. A reference voltage for the ADC is driven by using an on-chip reference driver without an external reference. A digital error correction with a redundancy is also used to compensate for analog noise such as an input offset voltage of a comparator and a gain error of a gain stage. The proposed pipelined ADC is implemented by using a 0.18-${\mu}m$ 1- poly 5-metal CMOS process with a 1.8 V supply. The total area including a power decoupling capacitor and the power consumption are 0.95 $mm^2$ and 51.5 mW, respectively. The signal-to-noise and distortion ratio (SNDR) is 56.15 dB at the Nyquist frequency, resulting in an effective number of bits (ENOB) of 9.03 bits.

• Journal of Electrical Engineering and information Science
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• v.3 no.2
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• pp.239-244
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• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.1268-1271
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• 2005

This paper proposes a compact-sized surface myoelectric sensor for myoelectric hand prosthesis. To fit the surface myoelectric sensor in the socket of the myoelectric hand prosthesis, the sensor should be a compact size. The surface myoelectric sensor is composed of a skin interface and a single processing circuit that are mounted on a single package. Since the skin interface has one reference and two input electrodes, and the reference electrode is located in middle of two input electrodes, we propose two types of sensors with the circle- and bar-shaped reference electrode, but all input electrodes are the bar-shaped. The metal material used for the electrodes is the stainless steel (SUS440) that endures sweat and wet conditions. Considering conduction velocity and median frequency of the myoelectric signal, we select the inter-electrode distance (IED) between two input electrodes as 18mm, 20mm, and 22 mm. The signal processing circuit consists of a differential amplifier with band pass filter, a band rejection filter for rejecting 60Hz power-line noise, amplifiers, and a mean absolute value circuit. We evaluate the proposed sensor from the output characteristics according to the IED and the shape of the reference electrode. From the experimental results we show the surface myoelectric sensor with the 18mm IED and the bar-shaped reference electrode is suitable for the myoelectric hand prosthesis.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.12 s.91
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• pp.1184-1189
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• 2004

A new schematic of quadrature voltage controlled oscillator(QVCO) is designed and fabricated. To obtain quadrature characteristic and low phase noise simultaneously, two differential VCOs are forced to un in quadrature mode by using coupling amplifier with a source degeneration resistor, which is optimized to obtain quadrature accuracy with minimum phase noise degradation. The designed QVCO was fabricated in standard CMOS technology. The measured performance showed the phase noise of below -120 dBc/Hz at 1 MHEz frequency offset, tuning bandwidth of 210 MHz from 2.34 GHz to 2.55 GHz with a tuning voltage varying form 0 to 1.8 V Quadrature error of 0.5 degree and amplitude error of 0.2 dB was measured with conjunction with low-lF mixer. The fabricated QVCO requires 19 mA including 5 mA in the VCO core part fiom a 1.8 V supply.

• Journal of the Korean Society for Nondestructive Testing
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• v.28 no.2
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• pp.217-224
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• 2008

Trusses are found in many common structures such as bridges and buildings. The truss is a fundamental design element in engineering structures and it is important for an engineer to apply the truss design to engineering structures by understanding the mechanics of truss element. In an experimental course, the experiment selves as an example of the usefulness of the Wheatstone bridge in amplifying the output of a transducer. With the apparatus described here, it is possible to obtain experimental measurements of forces in a truss member which agree within errors to predictions from elementary mechanics. The apparatus is inexpensive, easy to operate, and suitable as either a classroom demonstration or student laboratory experiment. This device is a small table-top experiment. The conventional strain measuring device is costly and complicated - it is not simple to understand its structure. Hence, strain gage and the A/D converter are assembled to come up with a load and a strain measuring device. The device was tested for measuring the strain in a loaded specimen and the results were compared to those predicted by theory of mechanics.