• Advances in materials Research
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• 제4권3호
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• pp.145-164
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• 2015

Biodegredable and injectable nanocomposites based on polypropylene fumarate (PPF) as unsaturated polyester were prepared. The investigated polyester was crosslinked with three different monomers namely N-vinyl pyrrolidone (NVP), methyl methacrylate (MMA) and a mixture of NVP and MMA (1:1 weight ratio) and was filled with 45 wt% of hydroxyapatite (HA) incorporated with different concentrations of chemically treated natural bone powder (NBP) (5, 10 and 15 wt%) in order to be used in treatment of orthopedics bone diseases and fractures. The nanocomposites immersed in the simulated body fluid (SBF) for 30 days, after the period of immersion in-vitro bioactivity of the nanocomposites was studied through Fourier transform infrared (FTIR), scanning electron microscope (SEM), energy dispersive X-ray (EDX) in addition to dielectric measurements. The degradation time of immersed samples and the change in the pH of the SBF were studied during the period of immersion.

• 전자공학회논문지A
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• 제32A권8호
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• pp.78-85
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• 1995

We fabricated the Pb$_{1-0.28{\alpha}}La_{0.28}TiO_{3}$ (PLT(28)) thin film successfully by using the sol-gel method and characterized it to evaluate its potential for being utilized as the capacitor dielectrics of ULSI DRAMs. In our sol-gel process, the acetates were used as the starting materials. Through the TGA-DTA analysis, we established the excellent fabrication conditions of the sol-gel method for the PLT(28) thin film. We obtained the dense and crack-free PLT(28) thin film of 100% perovskite phase by drying at 350$^{\circ}C$ after each coating and final annealing at 650$^{\circ}C$. Its electrical properties were measured from the planar capacitors fabricated on the Pt/Ti/SiO$_{2}$/Si substrate. By the P-E hysteresis measurement, its paraelectric phase was identified and its dielectric constant and leakage current density were measured as 936 and 1.1${\mu}A/cm^{2}$, respectively. Those electrical values indicate that the PLT(28) thin film is the most successful candidate for the capacitor dielectrics of ULSI DRAMs at the present.

• 한국분말재료학회지
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• 제17권4호
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• pp.289-294
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• 2010

For the aim of low-temperature co-fired ceramic microwave components, sintering behavior and microwave properties (dielectric constant ${\varepsilon}_r$, quality factor Q, and temperature coefficient of resonant frequency ${\tau}_f$) are investigated in $Bi_{18}O(Ca_{0.725}Zn_{0.275})_8Nb_{12}O_{65}$ [BCZN] ceramics with addition of $V_2O_5$. The specimens are prepared by conventional ceramic processing technique. As the main result, it is demonstrated that the additives ($V_2O_5$) show the effect of lowering of sintering temperature and improvement of microwave properties at the optimum additive content. The addition of 0.25 wt% $V_2O_5$ lowers the sintering temperature to $890^{\circ}C$ utilizing liquidphase sintering and show the microwave dielectric properties (dielectric constant ${\varepsilon}_r$ = 75, quality factor $Q{\times}f$ = 572 GHz, temperature coefficient of resonance frequency ${\tau}_f\;=\;-10\;ppm/^{\circ}C$). The estimated microwave dielectric properties with $V_2O_5$ addition (increase of ${\varepsilon}_r$, decrease of $Q{\times}f$, shift of ${\tau}_f$ to negative values) can be explained by the observed microstrucure (sintered density, abnormal grain structure) and possibly high-permittivity $Bi_{18}Zn_8Nb_{12}O_{65}$ (BZN) phase determined by X-ray diffraction.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.168-168
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• 2006

Low-operating voltage organic field-effect transistors (OFETs) have been realized with high dielectric constant (${\kappa}$) polymer such as cyanoethylated poly vinyl alcohol (CR-V, ${\kappa}=12$). Since the $high-{\kappa}$polymers are likely to contain water and ionic impurities, large hysteresis and considerable leakage current are frequently observed in OFETs. To solve these problems, we cross-linked the CR-V by using a cross-linking agent. Cross-linked CR-V dielectrics showed high dielectric constant of 11.1 and good insulating properties, resulting in a high capacitance ($81nF/cm^{2}$ at 1MHz) at 120 nm of dielectric thickness. Pentacene FETs with cross-linked CR-V dielectrics exhibited high carrier mobility ($0.72\;cm^{2}/Vs$), small subthreshold swing (185 mV/dec) and little hysteresis at low-operating voltage (${\Leq}-3V$).

• 폴리머
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• 제25권1호
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• pp.98-107
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• 2001

팬텀 모델 제작을 위해 도전체로서 전도성 카본블랙을, 유전체로서 (Ba, Ca)$(Sn, Ti)O_3$ 와 $SrTiO_3$를 적용한 SBS 복합재료의 유전 특성과 형상 회복 특성을 조사하였다. 카본블랙만을 첨가한 복합재료는 카본블랙 함량이 증가함에 따라 복소유전율과 도전율이 증가하였으며, 주파수가 증가함에 따라 유전율이 감소하고 도전율은 증가하는 주파수 의존 특성을 보였다. 카본블랙과 유전체를 동시에 적용한 3상 복합재료는 동일한 카본블랙 함량에 대해서 유전체의 함량이 증가할수록 복소유전율과 도전율이 증가하는 특성을 나타냈으며, 카본블랙의 영향으로 주파수가 증가함에 따라 유전율이 감소하였고 도전율은 증가하였다. 유전체/SBS 복합재료의 유전성질과 도전체/SBS 복합재료의 주파수 의존도를 조절하여 현재 이동전화 사용 주파수 대역인 775 MHz~2 GHz 범위에서 인체의 뇌와 두개골 조직의 유전율, 도전율과 상응하는 비흡수율 측정용 팬텀 모델 재료를 제작할 수 있었다. 열기계적 반복시험에서는 충전재의 함량이 증가함에 따라 잔류변형량이 증가하였으나, 인체 조직을 모사한 SBS 복합재료는 우수한 형상 회복 성능을 보였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1288-1290
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• 2005

We report on the structural and electrical properties of amorphous Yttria-stabilized zirconia (YSZ) thin films which are the potential high-k gate dielectric material of organic thin film transistor (OTFT). To investigate the influence of the oxygen flow rate on the structural and electrical properties of the YSZ films, XRD, XPS, J-E, I-V were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate.

• 한국전기전자재료학회논문지
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• 제16권12호
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• pp.1087-1090
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• 2003

The circular cavity resonator which can measure the dielectric properties of dielectrics in the V -band(50㎓∼75㎓) frequency range was designed and fabricated. Exciting and detecting of the resonator is performed by WR15 rectangular waveguides using Bethe's small hole coupling. GaAs and PTFE plate samples were used for the verification of the performance of the fabricated circular cavity resonator. In the measurement of GaAs and PTFE using that resonator, the permittivity were measured as I2.87 and 2.14, respectively.

• 전자공학회논문지A
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• 제29A권4호
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• pp.28-32
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• 1992

The electrical properties of ONO interpoly dielectrics grown by polycrystalline silicon have been studied. The polysilicon layer deposited as amorphous state kept its surface smoothness even after subsequent heat cycle induced crystallization. Polysilicon was doped with a POCl$_3$ and arsenic ion implantation. Arsenic was implanted in several different doses. The effective barrier heights calculated from F-N plotting method and breakdown fields increased as the polysilicon doping concentration increased. On the other hand they mere degraded when arsenic concentration in polysilicon exceeded 2{\times}10^{20}[cm^{-3}]$. The reliability of dielectric as monitored by TDDB infant fail and breakdown field showed increasing degradation as doping concentration increased

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.135-138
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• 2003

The circular cavity resonator which can measure the dielectric properties of dielectrics in the V-band($50GHz{\sim}75GHz$) frequency range was designed and fabricated. Exciting and detecting of the resonator is peformed by WR15 rectangular waveguides using Bethe's small hole coupling. The GaAs plate sample was used for the verification of the performance of the fabricated circular cavity resonator. In the measurement of GaAs single crystal using that resonator, the resonant frequency of the dominant $TE_{011}$ mode, the permittivity and $Q{\times}f_0$ were measured as 53.29GHz, 12.87 and 138,000, respectively.

• 한국세라믹학회지
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• 제36권6호
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• pp.590-598
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• 1999