한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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The characteristics of Organic Thin Film Transistors with high-k dielectrics

  • Kim, Chang-Su (Department of Metallurgical Engineering, Yonsei University) ;
  • Kim, Woo-Jin (Department of Metallurgical Engineering, Yonsei University) ;
  • Jo, Sung-Jin (Department of Metallurgical Engineering, Yonsei University) ;
  • Baik, Hong-Koo (Department of Metallurgical Engineering, Yonsei University)
  • Published : 2005.07.19
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Abstract

We report on the structural and electrical properties of amorphous Yttria-stabilized zirconia (YSZ) thin films which are the potential high-k gate dielectric material of organic thin film transistor (OTFT). To investigate the influence of the oxygen flow rate on the structural and electrical properties of the YSZ films, XRD, XPS, J-E, I-V were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate.

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