• Journal of Electrical Engineering and Technology
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• 제10권3호
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• pp.1107-1113
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• 2015

Test temperature is an important factor affecting the measurement results of dielectric response of field power transformers. In order to better apply the polarization and depolarization current (PDC) to the condition monitoring of oil-paper insulation system in power transformers, the influences and elimination method of test temperature on PDC characteristic spectroscopy (PDC-CS) were investigated. Firstly, the experimental winding sample was measured by PDC method at different test temperatures, then the PDC-CS was obtained from the measurement results and its changing rules were discussed, which show that the PDC-CS appears a horizontal mobility with the rise of temperature. Based on the rules, the “time temperature shift technique” was introduced to eliminate the influence of test temperature. It is shown that the PDC-CS at different test temperatures can be converted to the same reference temperature coincident with each other.

• 한국컴퓨터산업학회논문지
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• 제5권2호
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• pp.331-336
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• 2004

본 논문은 GPS/GSM 이중대역으로 차량 내부 장착용 텔레매틱스 안테나를 제안하였다. 고유 전율을 가지는 유전체를 사용하지 않으며 두 안테나를 같은 평면에 1mm의 두께를 가지는 fr4기판 위에 설계를 하였다. 이러한 방법으로 제작비용의 절감과 제작공정의 간소화를 추구하였다 GSM 대역은 평면 역 F형 안테나(PIFA)로 구현하였고 GPS 대역의 안테나를 마이크로스 트립 안테나(MSA)로 설계한 PIFA-MSA를 제안하였다. PIFA-MSA는 포트간 격리도 특성을 고려하여 상용 안테나보다 낮게 구현하면서 두 안테나간 편파를 수직으로 배열하여 격리도 특성을 극대화했으며 설계규격 또한 만족 시켰다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.245-248
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• 2003

Randomly oriented ferroelectric cerium-substituted $Bi_4Ti_3O_{12}$ thin films have been prepared by using metal-organic decomposition method. The layered perovskite structure was investigated using annealing for 1 h in the temperature range from $550\;{\sim}\;750\;^{\circ}C$. The structure and morphology of the films were characterized using X-ray diffraction and scanning electron microscopy The $Bi_{3.4}Ce_{0.6}Ti_3O_{12}$ (BCeT) thin films showed a perovskite phase and dense microstructure. The grain size of the BCeT films increasedwith increasing annealing temperature. The hysteresis loops of the films were well defined at temperatures above $600\;^{\circ}C$. The 200-nm-thick BCeT thin films annealed at $650\;^{\circ}C$ showed a large remanent polarization (2Pr) of 59.3 ${\mu}C/cm^2$ at an applied voltage of 10 V. The BCeT thin films showed good fatigue endurance up to $5\;{\times}\;10^9$ bipolar cycling at 5 V and 100 kHz.

• Transactions on Electrical and Electronic Materials
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• 제6권1호
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• pp.10-13
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• 2005

$Sr_{0.6}Ba_{0.4}Nb_{2}O_{6}$, hereafter SBN60, thin films of 300 nm thickness were deposited using ion beam sputtering technique, in which sintered ceramic target of the same composition was utilized and the $Ar:O_{2}$ gas ratio was controlled during deposition onto $Pt(100)/TiO_{2}/SiO_{2}/Si$ substrate. Crystallization and orientation behavior as well as electrical properties of the films were examined after annealing treatment at $650{\sim}800{\cric}C$. It was found that the film orientation was dependent upon $Ar:O_{2}$ratio, in which strong (00l) orientation was developed when the gas ratio was about 1:4 at $4.3{\times}10^{-4}$ torr. Typical remanent polarization (2Pr), the coercive field (Ec) and the dielectric constant of Pt/SBN60/Pt thin film capacitor were approximately $10{\mu}C/cm^{2}$, 60 kV/cm, and 615, respectively.

• 한국전자파학회논문지
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• 제11권2호
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• pp.186-196
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• 2000

본 논문에서는 이중통신용 안테나 시스템을 위한 변형된 사각 루프 주파수 선택 반사기를 제안하고, 그 특성 을 해석하였다 변형된 사각 루프 주파수 선택 반사기를 해석함에 있어서 유전체의 영향과 주기적 배열구조임을 고려하기 워하여 파수 영역 방법(Spectral Domain Method)과 Floquet 이론을 도입하였으며, 수치해석 방법으로 는 rooftop basis function을 이용한 모멘트법을 적용하였다 해석결과로는 기존의 사각 루프와 변형된 사각 루프 의 전송 특성플 비교하였으며. 변형된 사각 루프의 경우 입사각과 편파 변화에 따른 전송 특성도 제시하였다. 수 치해석 방법의 타당성을 검증하기 위해 변형된 사각 루프 주파수 선택 반사기를 실제 제작 및 측정하여 수치해 석 결파와 비교하였다. 측정결과는 수치해석 결과와 비교적 잘 일치함을 보였다

• 한국전기전자재료학회논문지
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• 제15권12호
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• pp.1060-1064
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• 2002

We have studied the effect of crystallization temperature, composition and film thickness, which are the fundamental processing parameters of lead zirconate titanate(PZT) thin film fabrication, in the respect of the piezoelectric properties by our pneumatic loading method(PLM). A great deal of research has been done in the field of characterization for piezoelectric thin films after the first report on the measurement for the piezoelectric coefficient of thin films in 1990. Even though the piezoelectric properties of thin films are very critical factors in the micro-electro mechanical system(MEMS) and thin film sensor devices, a few reports for the piezoelectric characterization are provided for the last decade unlikely the bulk piezoelectric devices. We have found that the piezoelectric properties of thin films are improved as the increase of crystallization temperature up to 750$\^{C}$ and this behavior can be also explained by the analysis of dielectric polarization hysteresis loop, X-ray diffraction and scanning electron microscopy. The effect of Zr/Ti composition has been also studied. This gives us the fact that the maximum piezoelectricity is found near Morphotropic Phase Boundary(MPB) as bulk PZT system does.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
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• pp.413-415
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• 2000

Piezoelectric ceramics of PZT have been developed to apply for transformers in notebook. Use of piezoelectric ceramics in applications like piezoelectric transformers was made possible by the development of new materials with high electromechanical coupling coefficients and high mechanical quality factor. "Hard" ferroelectiric ceramics of complex composition based on lead zirconate titanate with Mn additive have been prepared. The perovskitic phase reaction of the oxides. The crucial role played by the intermediate mixing and grinding procedures in the assessment of the final properties of the material was investigated. Densification up to approximately the theoretical density value was achieved. The polarization was obtained by subjecting the samples at $30kVcm^{-1}$ poling electric field, in a silicon oil bath heated at $110^{\circ}C$. Their microstructural and morphological properties were checked by X-ray diffraction analysis and scanning electron microscopy. The optimized samples presented very high qualify and electromechanical coupling factors, together with small dielectric loss.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1488-1490
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• 1997

$(Pb_{1-x}La_x)Ti_{1-x/4}O_3$ (x=0, 0.02, 0.04, 0.06, 0.08) ceramic thin films were fabricated by Sol-Gel method. A stock solution of (Pb,La)$TiO_3$ with excess Pb 10mol% was made and spin-coated on the Pt/Ti/$SiO_2$/Si substrate at 4000rpm for 30 seconds. Coated specimens were dried on the hot-plate at $350^{\circ}C$ for 10 min and sintered at $500{\sim}750^{\circ}C$ for 1 hour. The dielectric constant, remanent polarization and coercive field of the PLT(6 at.%) thin films sintered at $650^{\circ}C$ were 884, $13.95{\mu}C/cm^2$ and 8.7kV/cm, respectively. Pyroelectric coefficient, figure of merit of pyroelectric current, voltage responsivity and detectivity of PLT(6at.%) thin films were $3.2{\times}10^{-8}\;C/cm^2K$, $1.02{\times}10^{-8}\;C{\cdot}cm/J$, $2.9{\times}10^{-11}\;C{\cdot}cm/J$, $0.29{\times}10^{-8}\;C{\cdot}cm/J$, respectively.

• 한국세라믹학회지
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• 제34권8호
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• pp.897-907
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• 1997

Thin films of Bi4-xSmxTi3O12(0$\leq$x$\leq$2) were prepared on Pt/Ti/SiO2/Si(100) at $700^{\circ}C$ using spin-coating with sols derived from Bi-Sm-Ti complex alkoxides. From X-ray diffraction analysis, it was observed that Sm-substituted phases resembled ferroelectric Bi4Ti3O12 in structure. Variations of their lattice parameters depending on the amount of Sm-substitution showed that an anomalous structural distortion might exist at x=1. The grain sizes of the thin films decreased from 0.115 ${\mu}{\textrm}{m}$ to 0.078${\mu}{\textrm}{m}$ with increasing the amount of Sm-substitution. The dielectric constants and the remanent polarizations of the thin films decreased with increasing the amount of the Sm-substitution, which were related to decrease of the stereo-active Bi3+ ion contributing to polarization. However, these values were exceptionally high at x=1, compared to those of the other substituted phases. Such an anomaly suggests that the phase of x=1 has 1:1 chemical ordering between Sm and Bi in structure. The thin films of all compositions except x=2 showed ferroelectricity. The thin film of x=2 was paraelectric, whose grains were too fine to exhibit ferroelectricity.

• 산업기술연구
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• 제25권A호
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• pp.157-162
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• 2005

In this study, the fabrication of PZT films was performed from a multilayer structure comprising $TiO_2$, $ZrO_2$ and PbO thin films prepared by rapid themal chemical vapor deposition(RTMOCVD). $TiO_2$, $ZrO_2$ and PbO are the component layers of oxide multilayer system for a single phase PZT thin film. The composition control of PZT thin film was done by the thickness control of individual component layer. The composition ratio of Pb:Ti:Zr with thickness were 1:0.94:0.55. Occurrence of a single-phase of PZT was initiated at around $550^{\circ}C$ and almost completed at $750^{\circ}C$ under the fixed time of 1hr. As the concentration of Pb increased, the roughness and crystallization in the film increased. From the as result of using XPS and TEM, the single phase formation through annealing is evident. The electrical properites of the prepared PZT thin film(Zr/Ti=40/60, 300 nm) on a Pt-coated substrate were as follow: dielectric constant ${\varepsilon}_r=475$, coercive field Ec=320 kV/cm, and remanant polarization $P_r=11{\mu}C/cm^2$ at an applied voltage of 18 V.