• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.08a
• /
• pp.85-88
• /
• 2003

$Sr_xBa_{1-x}Nb_2O_6$(SBN, $025{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in Ar/$O_2$ atmosphere. SBN30 thin film of 500 ${\AA}$ was pre-deposited as a seed layer on Pt(l00)/$TiO_2$/$SiO_2$/Si substrate followed by SBN60 deposition up to 4500 ${\AA}$ in thickness. SBN60/SBN30 layer was deposited at different Oxygen amount of 0, 8.1, 17, and 31.8 sccm, respectively. The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. The crystal structure and the electric properties depended on the Oxygen amount, heating temperature and was the best at O2 = 8.1 seem, $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was 13 ${\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1492, respectively.

• Korean Journal of Materials Research
• /
• v.19 no.5
• /
• pp.253-258
• /
• 2009

Mn-substituted $BiFeO_3$(BFO) thin films were prepared by r.f. magnetron sputtering under an Ar/$O_2$ mixture of various deposition pressures at room temperature. The effects of the deposition pressure and annealing temperature on the crystallization and electrical properties of BFO films were investigated. X-ray diffraction patterns revealed that BFO films were crystallized for films annealed above $500^{\circ}C$. BFO films annealed at $550^{\circ}C$ for 5 min in $N_2$ atmosphere exhibited the crystallized perovskite phase. The (Fe+Mn)/Bi ratio decreased with an increase in the deposition pressure due to the difference of sputtering yield. The grain size and surface roughness of films increased with an increase in the deposition pressure. The dielectric constant of BFO films prepared at various conditions shows $127{\sim}187$ at 1 kHz. The leakage current density of BFO films annealed at $500^{\circ}C$ was approximately two orders of magnitude lower than that of $550^{\circ}C$. The leakage current density of the BFO films deposited at $10{\sim}30\;m$ Torr was about $5{\times}10^{-6}{\sim}3{\times}10^{-2}A/cm^2$ at 100 kV/cm. Due to the high leakage current, saturated P-E curves were not obtained in BFO films. BFO film annealed at $500^{\circ}C$ exhibited remnant polarization(2Pr) of $26.4{\mu}C/cm^2$ at 470 kV/cm.

• Korean Journal of Optics and Photonics
• /
• v.16 no.6
• /
• pp.553-559
• /
• 2005

Pulsed terahertz (THz) radiation was generated by optical rectification and detected by a fee space electro-optic sampling (FS-EOS) method. We used ZnTe (110) crystals for both generation and detection. By coating dielectric anti-reflection film on the ZnTe crystal surface, we can reduce the reflectance of a pump laser beam from $30\%$ to $2\%$, and the terahertz pulse amplitude increased $27\%$ compared with an uncoated crystal. A wider bandwidth of THz radiation was obtained by using a thinner crystal but the signal intensity was decreased in this case. And variations of THz radiation by changing orientation of the ZnTe crystal with respect to the pump (or probe) laser polarization, and by changing the power of the pump laser have also been investigated and discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.12
• /
• pp.764-768
• /
• 2016

To investigate excess $Na^+$ effect, $Bi_{0.5}(Na_{0.78+x}K_{0.22})_{0.5}TiO_3$ ($0{\leq}x{\leq}0.05$) (BNKT) ceramics were prepared by using a conventional solid-state reaction method. The structure and ferroelectric properties of BNKT ceramics were characterized by XRD (X-ray diffraction) and polarization dependence by external electric field. Also, the temperature dependence of dielectric constant and loss were studied. From these results, it was found that appropriate excess $Na^+$ into BNKT ceramics compensate the volatility and induce dense ceramics. The enhanced piezoelectric coefficient (158 pC/N) and depolarization temperature ($202^{\circ}C$) were obtained for the x=0.01 composition.

• The Korean Journal of Ceramics
• /
• v.6 no.4
• /
• pp.348-353
• /
• 2000

The effects of MnO$_2$ and Fe$_2$O$_3$ on the piezoelectric properties of 0.05PMN-0.451PT-0.499PZ ceramics were investigated. The addition of MnO$_2$ increased mechanical quality factor (Q$_m$) but decreased the dielectric constant (K$^{T}_{33}$) and compliance (S$^{E}_{11}$) of the specimens. These results indicated that MnO$_2$ behaves as an acceptor in 0.05MN-0.451PT-0.499PZ ceramics. The electromecanical coupling coefficient (K$_P$) of 0.05PMN-0.451PT-0.499PZ ceramics slightly increased with the addition of MnO$_2$ however, the enhancement of $K_P$ was insignificant. A small amount of Fe$_2$O$_3$ was added to enhance the $K_P$ of the 0.05PMN-0.451PT-0.499PZ + 0.5 wt% MnO$_2$ ceramics. The addition of Fe$_2$O$_3$ largely increased $K_P$ through the increase of the K$^{T}_{33}$ and the polarization. The mechanical quality factor of the specimens decreased with the addition of Fe$_2$O$_3$however, the reduction was negligible.

• Journal of Sensor Science and Technology
• /
• v.17 no.6
• /
• pp.418-424
• /
• 2008

The PZT based piezoelectric thick films prepared by screen printing method have been mainly used as a functional material for MEMS applications due to their compatibility of MEMS process. However the screen printed thick films generally reveal poor electrical and mechanical properties because of their porous microstructure. To improve microstructure we mixed attrition milled powder with ball milled powder of 0.01Pb$(Mg_{1/2}W_{1/2})O_3$-0.41Pb$(Ni_{1/3}Nb_{2/3})O_3$-$0.35PbTiO_3$-$0.23PbZrO_3$+0.1 wt% ${Y_2}{O_3}$+1.5 wt% ZnO composition. By mixing 25 % of attrition milled powder and 75 % of ball milled powder, the broadest particle size distribution was obtained, leading to a dense thick film with crack-free microstructure and improved dielectric properties. The X-ray diffraction analysis revealed that the film was in wellcrystallized perovskite phase. The remanent polarization was increased from $13.7{\mu}C/cm^2$ to $23.3{\mu}C/cm^2$ at the addition of 25 % attrition milled powder.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.6
• /
• pp.465-470
• /
• 2020

Heterolayered K(Ta,Nb)O₃/Pb(Zr,Ti)O₃ thin films on Pt/Ti/SiO₂/Si substrates were prepared by a sol-gel process and spin-coating method. The structural and electrical properties were measured to investigate the possibility of application as an electrocaloric effect device. All specimens exhibited dense and uniform cross-sectional structures without pores, and the average thickness of the specimen coated six times was approximately 394 nm. Curie temperatures were observed at 5℃ or less in type-I and 10℃ in type-II specimens, respectively. Type-II specimens coated 6 times showed a relative dielectric constant of 758 and remanent polarization of 9.71 μC/㎠ at room temperature. The maximum electrocaloric effect occurred between 20 and 25℃, slightly higher than their Curie temperature, and the electrocaloric property (ΔT) of the type-II specimens coated 6 times was approximately 1.2℃ at room temperature.

• Electrical & Electronic Materials
• /
• v.10 no.2
• /
• pp.134-140
• /
• 1997

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb $_{2}$3/O$_{3}$)(PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol rates of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20) and #4(40:40:20), respectively. The spin-coated PZT-PNN films were sintered at the temperature from 500.deg. C to 600.deg. C for crystallization. The P-E hysteresis curve was drawn by Sawyer-Tower circuit with PZT-PNN film. The coercive field and the remanent polarization of #4(40:40:20 mol%) PZT-PNN film were 28.8 kV/cm and 18.3 .mu.C/cm$^{2}$, respectively. Their dielectric constants were shown between 128 and 1120, and became maximum value in MPB(40:40:20 mol%). The leakage currents of PZT-PNN films were about 9.4x 10$^{-8}$ A/cm$^{2}$, and the breakdown voltages were about 0.14 and 1.1 MV/cm. The Curie point of #3(45:35:20 mol%, sintered at 600.deg. C) film was 330.deg. C.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.271-274
• /
• 2003

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin films of different thickness were pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $4500\;{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800\;^{\circ}C$ in air, respectively, The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was difference in the crystal structure with heat-treatment temperature, and the electric properties depended on the heating temperature and the seed-layer thickness. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15\;{\mu}C/cm^2$, the coercive field (Ec) 65 kV/cm, and the dielectric constant 1492, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.271-271
• /
• 2006

The structural, dielectric and piezoelectric properties of $[Bi_{1-x}(Na_{0.7-x}K_{0.2}Li_{0.1})]_{0.5}BaxTiO_3$ (BNKLBxT) ceramics were studied for the compositional range, x = 0-0.08. The samples were prepared by conventional sintering technique. The result of X-ray diffraction (XRD) suggest that $Ba^{2+}$ diffuse into the $[Bi(Na_{0.7}K_{0.2}Li_{0.1})]_{0.5}TiO_3$ (BNKLT) lattices to form a solid solution with a single phase perovskite structure. The ceramic show excellent piezoelectric and ferroelectric properties, and optimum properties measured are as follows: piezoelectric constant $d_{33}=230pC/N$, planar electromechanical coupling factor $k_p\;=\;40.3%$, remanent polarization $P_r\;=\;30\;{\mu}C/cm^2$, and coercive field $E_c\; =\;2.5\;kV/mm$, respectively.