• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.1107-1113
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• 2015

Test temperature is an important factor affecting the measurement results of dielectric response of field power transformers. In order to better apply the polarization and depolarization current (PDC) to the condition monitoring of oil-paper insulation system in power transformers, the influences and elimination method of test temperature on PDC characteristic spectroscopy (PDC-CS) were investigated. Firstly, the experimental winding sample was measured by PDC method at different test temperatures, then the PDC-CS was obtained from the measurement results and its changing rules were discussed, which show that the PDC-CS appears a horizontal mobility with the rise of temperature. Based on the rules, the “time temperature shift technique” was introduced to eliminate the influence of test temperature. It is shown that the PDC-CS at different test temperatures can be converted to the same reference temperature coincident with each other.

• Journal of the Korea Computer Industry Society
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• v.5 no.2
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• pp.331-336
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• 2004

In this paper, an antenna for telematics is proposed. It operates at GPS/GSM frequency-bands and it can be installed inside of a vehicle. There is a great difference between the proposed antenna and commonly used antennas. It needs not to use a dielectric with a high permittivity since it is formed on a sheet of FR4 with only 1mm thickness. Thus, it is possible to cut costs and make process of manufacture simple. Planar inverted-F antenna(PIFA) for GSM and microstrip antenna(MSA) for GPS is designed and PIFA-MSA antenna is proposed. The height is lower than that of commonly used antennas. And polarization of the PIFA and MSA is arranged perpendicularly for isolation improvement of each port, thus isolation of these two antennas is improved. Also, it is sufficient for the all specifications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.245-248
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• 2003

Randomly oriented ferroelectric cerium-substituted $Bi_4Ti_3O_{12}$ thin films have been prepared by using metal-organic decomposition method. The layered perovskite structure was investigated using annealing for 1 h in the temperature range from $550\;{\sim}\;750\;^{\circ}C$. The structure and morphology of the films were characterized using X-ray diffraction and scanning electron microscopy The $Bi_{3.4}Ce_{0.6}Ti_3O_{12}$ (BCeT) thin films showed a perovskite phase and dense microstructure. The grain size of the BCeT films increasedwith increasing annealing temperature. The hysteresis loops of the films were well defined at temperatures above $600\;^{\circ}C$. The 200-nm-thick BCeT thin films annealed at $650\;^{\circ}C$ showed a large remanent polarization (2Pr) of 59.3 ${\mu}C/cm^2$ at an applied voltage of 10 V. The BCeT thin films showed good fatigue endurance up to $5\;{\times}\;10^9$ bipolar cycling at 5 V and 100 kHz.

• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.10-13
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• 2005

$Sr_{0.6}Ba_{0.4}Nb_{2}O_{6}$, hereafter SBN60, thin films of 300 nm thickness were deposited using ion beam sputtering technique, in which sintered ceramic target of the same composition was utilized and the $Ar:O_{2}$ gas ratio was controlled during deposition onto $Pt(100)/TiO_{2}/SiO_{2}/Si$ substrate. Crystallization and orientation behavior as well as electrical properties of the films were examined after annealing treatment at $650{\sim}800{\cric}C$. It was found that the film orientation was dependent upon $Ar:O_{2}$ratio, in which strong (00l) orientation was developed when the gas ratio was about 1:4 at $4.3{\times}10^{-4}$ torr. Typical remanent polarization (2Pr), the coercive field (Ec) and the dielectric constant of Pt/SBN60/Pt thin film capacitor were approximately $10{\mu}C/cm^{2}$, 60 kV/cm, and 615, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.2
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• pp.186-196
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• 2000

In this paper, modified square loop frequency selective surface for dualband communication antenna systems is proposed, and the scattering characteristics is discussed. The analysis for the problem of scattering by periodic structures with a dielectric slab is formulated using the spectral-domain immittance approach and Floquet's theorem. The method of moments which uses rooftop subdomain basis function is employed to solve the equations. Numerical results include the comparison between the transmission characteristic of general square loop and that of modified square loop. Also, the transmission characteristics of modified square loop for arbitrary incident angle and polarization is presented. To verify analysis results, modified square loop frequency selective surface was fabricated and the calculated results were compared with the measured results. The measured results showed good agreement with the calculated results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1060-1064
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• 2002

We have studied the effect of crystallization temperature, composition and film thickness, which are the fundamental processing parameters of lead zirconate titanate(PZT) thin film fabrication, in the respect of the piezoelectric properties by our pneumatic loading method(PLM). A great deal of research has been done in the field of characterization for piezoelectric thin films after the first report on the measurement for the piezoelectric coefficient of thin films in 1990. Even though the piezoelectric properties of thin films are very critical factors in the micro-electro mechanical system(MEMS) and thin film sensor devices, a few reports for the piezoelectric characterization are provided for the last decade unlikely the bulk piezoelectric devices. We have found that the piezoelectric properties of thin films are improved as the increase of crystallization temperature up to 750$\^{C}$ and this behavior can be also explained by the analysis of dielectric polarization hysteresis loop, X-ray diffraction and scanning electron microscopy. The effect of Zr/Ti composition has been also studied. This gives us the fact that the maximum piezoelectricity is found near Morphotropic Phase Boundary(MPB) as bulk PZT system does.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.413-415
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• 2000

Piezoelectric ceramics of PZT have been developed to apply for transformers in notebook. Use of piezoelectric ceramics in applications like piezoelectric transformers was made possible by the development of new materials with high electromechanical coupling coefficients and high mechanical quality factor. "Hard" ferroelectiric ceramics of complex composition based on lead zirconate titanate with Mn additive have been prepared. The perovskitic phase reaction of the oxides. The crucial role played by the intermediate mixing and grinding procedures in the assessment of the final properties of the material was investigated. Densification up to approximately the theoretical density value was achieved. The polarization was obtained by subjecting the samples at $30kVcm^{-1}$ poling electric field, in a silicon oil bath heated at $110^{\circ}C$. Their microstructural and morphological properties were checked by X-ray diffraction analysis and scanning electron microscopy. The optimized samples presented very high qualify and electromechanical coupling factors, together with small dielectric loss.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1488-1490
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• 1997

$(Pb_{1-x}La_x)Ti_{1-x/4}O_3$ (x=0, 0.02, 0.04, 0.06, 0.08) ceramic thin films were fabricated by Sol-Gel method. A stock solution of (Pb,La)$TiO_3$ with excess Pb 10mol% was made and spin-coated on the Pt/Ti/$SiO_2$/Si substrate at 4000rpm for 30 seconds. Coated specimens were dried on the hot-plate at $350^{\circ}C$ for 10 min and sintered at $500{\sim}750^{\circ}C$ for 1 hour. The dielectric constant, remanent polarization and coercive field of the PLT(6 at.%) thin films sintered at $650^{\circ}C$ were 884, $13.95{\mu}C/cm^2$ and 8.7kV/cm, respectively. Pyroelectric coefficient, figure of merit of pyroelectric current, voltage responsivity and detectivity of PLT(6at.%) thin films were $3.2{\times}10^{-8}\;C/cm^2K$, $1.02{\times}10^{-8}\;C{\cdot}cm/J$, $2.9{\times}10^{-11}\;C{\cdot}cm/J$, $0.29{\times}10^{-8}\;C{\cdot}cm/J$, respectively.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.897-907
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• 1997

Thin films of Bi4-xSmxTi3O12(0$\leq$x$\leq$2) were prepared on Pt/Ti/SiO2/Si(100) at $700^{\circ}C$ using spin-coating with sols derived from Bi-Sm-Ti complex alkoxides. From X-ray diffraction analysis, it was observed that Sm-substituted phases resembled ferroelectric Bi4Ti3O12 in structure. Variations of their lattice parameters depending on the amount of Sm-substitution showed that an anomalous structural distortion might exist at x=1. The grain sizes of the thin films decreased from 0.115 ${\mu}{\textrm}{m}$ to 0.078${\mu}{\textrm}{m}$ with increasing the amount of Sm-substitution. The dielectric constants and the remanent polarizations of the thin films decreased with increasing the amount of the Sm-substitution, which were related to decrease of the stereo-active Bi3+ ion contributing to polarization. However, these values were exceptionally high at x=1, compared to those of the other substituted phases. Such an anomaly suggests that the phase of x=1 has 1:1 chemical ordering between Sm and Bi in structure. The thin films of all compositions except x=2 showed ferroelectricity. The thin film of x=2 was paraelectric, whose grains were too fine to exhibit ferroelectricity.

• Journal of Industrial Technology
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• v.25 no.A
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• pp.157-162
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• 2005

In this study, the fabrication of PZT films was performed from a multilayer structure comprising $TiO_2$, $ZrO_2$ and PbO thin films prepared by rapid themal chemical vapor deposition(RTMOCVD). $TiO_2$, $ZrO_2$ and PbO are the component layers of oxide multilayer system for a single phase PZT thin film. The composition control of PZT thin film was done by the thickness control of individual component layer. The composition ratio of Pb:Ti:Zr with thickness were 1:0.94:0.55. Occurrence of a single-phase of PZT was initiated at around $550^{\circ}C$ and almost completed at $750^{\circ}C$ under the fixed time of 1hr. As the concentration of Pb increased, the roughness and crystallization in the film increased. From the as result of using XPS and TEM, the single phase formation through annealing is evident. The electrical properites of the prepared PZT thin film(Zr/Ti=40/60, 300 nm) on a Pt-coated substrate were as follow: dielectric constant ${\varepsilon}_r=475$, coercive field Ec=320 kV/cm, and remanant polarization $P_r=11{\mu}C/cm^2$ at an applied voltage of 18 V.