• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.64-68
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• 1990

Boundary element method using linear basis function is applied to obtain fields scattered from a 3-D dielectric sphere. Electric field integral equation is used on the surfaces of the dielectric material where its surface is discretized into trilateral cells. For plane wave incidence, scattered fields by a dielectric sphere is calculated and compared with its analytic solution. The total electric fields are calculated on the great circle of the sphere boundary as well as the outside of the sphere in the plane of the wave vector and the polarization vector of the incident electric field.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2005.11a
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• pp.367-370
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• 2005

In this paper, we made a Singly Fed patch which is the fittest at the feeding part. And we found out return loss and radiation pattern about dielectric rod array antenna which has six's passive element to shape FTEP(Flat-topped element pattern) after we analyzed the characters of singly dielectric rod antenna. We show the conclusion that has the optimum return loss and more flat radiation pattern.

• Journal of electromagnetic engineering and science
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• v.11 no.1
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• pp.11-15
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• 2011

Preserving high-order accuracy in high-order FDTD solutions across dielectric interfaces is very important for practical time-domain electromagnetic simulations. This paper presents a fourth-order accurate numerical boundary scheme for the planar dielectric interface to be used in the fourth-order FDTD method proposed earlier by the author. The interface scheme for the two-dimensional (2-D) transverse magnetic (TM) polarization case is derived and validated by monitoring the $L_2$ norm errors in the numerical solutions of a partially-filled cavity demonstrating its fourth-order convergence and long-time numerical stability in the presence of the planar dielectric interface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.611-615
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• 2003

Eu-doped lead zirconate titanate(Pb$\sub$1.1/(Zr$\sub$0.6/Ti$\sub$0.4/)O$_3$; PZT) thin films on the Pt/Ti/SiO$_2$/Si substrates prepared by a sol-gel method. The effect on structural and electrical properties of PZT thin films measured according to the Eu content. Eu-doping altered significantly dielectric and ferroelectric properties. The remanent polarization and the coercive field decreased with the increasing Eu content. The dielectric constant and the dielectric loss of PZT thin films decreased with the increasing Eu content. The 0.5 mol% of Eu-doped PZT thin film showed improved fatigue characteristic comparing to the undoped PZT thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.41-43
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• 2004

Dielectric thin films of $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ were deposited on $Pt(111)/Ti/SiO_2/Si$ substrates in situ by pulsed laser deposition(PLD) and annealed with different gases which are forming gas and oxygen gas, respectively. The diffusion of hydrogen into the ferroelectric film was caused by annealing process and resulted in the destruction of polarization. The dielectric properties of forming gas annealed PLT thin films, which are dielectric constant, ferroelectric characteristic, and leakage current characteristics, were degraded

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.252-253
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• 2005

The dielectric relaxation properties of $^{60}Co$ gamma-ray irradiated Poly(vinylidene fluoride) (PVDF) containing various antioxidants have been investigated for radiation degradation. Cole-Cole's circular arcs were induced from the results of temperature and frequency dependency of dielectric properties with radiation dose. The magnitude of polarization of PVDF was decreased by adding antioxidants. The values of dielectric relaxation intensity calculated by using the Cole-Cole's circular arcs showed a certain tendency for radiation degradation.

• Journal of the Korean Ceramic Society
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• v.36 no.9
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• pp.915-922
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• 1999

Microwave dielectric properties and far infrared reflectivity spectra of the (Zr0.8Sn0.2)TiO4 ceramics were inves-tigated with the various cooling rate. Dielectric constant was nearly same value while the unloaded Q value was largely affected by cooling rate. The Q.f of 42,140 at 7 GHz was obtained for the specimens with cooling rate of 1$^{\circ}C$/min. The effect of the cooling rate on the change of the ionic the electronic polarization and the intrinsic microwave loss of the specimens were investigated by the infrared reflectivity spectra from 50 to 4000cm-1 which were calculated by Kramers-Kroning analysis and the classical oscillator model. The relative tendency of microwave dielectric properties of the specimens calculated from the relfectivity data were in good agreement with the results by the post resonant method.

• Journal of the Korea Safety Management & Science
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• v.4 no.4
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• pp.137-146
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• 2002

In order to investigate the effect of irradiation by $^{60}Co-\gamma$rays as well as the e thermal treatment on the dielectric deterioration in ethylene propylene rubber, insulating material for electric cables used in atomic power plants, charging discharging current, residual built- up voltage and dielectric properties are measu discussed in this study. Variance in the characteristic of relative dielectric constant as a function of tem was observed in relatively high dose of irradiation. Since glass transition tem appeared at tens of degree Celsius below zero, the characteristic is attributed orientation polarization. Dielectric loss is generally increased, with increasing d irradiation in the characteristic of dielectric loss as a function of temperature, No d loss by thermal treatment was observed. Dielectric resistance decreases with increa of irradiation in the characteristic of charging current as a function of temperature be considered that dielectric resistance seems to be recovered by thermal treatm characteristic of discharging current as a function of time in the specimen less ir become similar to that of the unirradiated, when thermal treated. A peak is shown residual built- up voltage as a function of time, and the corresponding time of the shorten as increasing dose of irradiation. It is also observed that the corresponding the peak is lengthened by thermal treatment.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.2
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• pp.103-108
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• 2004

This paper shows the simulation of electric field distribution and removal characteristics of Escherichia coli for water discharge tube with globular $SiO_2$. At the experiments of the removing Escherichia coli used the discharge tube with globular dielectric($SiO_2$), because the electric field is increased when applied voltage is increased, the removed ratio of Escherichia coli was related with increasing of applied voltage. When a passing number of test water in water discharge tube is increased, the removed ratio of Escherichia coli is increased because passing number of territory with electric field is increased. When diameter of globular dielectric($SiO_2$) is increased, the removed time of Escherichia coli was decreased because electric field for dielectric polarization of globular dielectric($SiO_2$) was increased. Also, the removed ratio of Escherichia coli of the water discharge tube with globular dielectric($SiO_2$) was measured higher than the removal ratio of the discharge tube without globular dielectric($SiO_2$)

• Korean Journal of Materials Research
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• v.9 no.10
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• pp.1032-1036
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• 1999

The electron emission and degradation of the ferroelectric Pb($\textrm{Zr}_{0.5}\textrm{Ti}_{0.5}$)$\textrm{O}_3$ ceramics by the pulse electric field have been investigated as a function of the upper electrode diameter. Polarization increased with the decrease of the upper electrode diameter due to the increase of the volume fraction participated in the polarization reversal near the electrode edge. Simulation using ANSYS 5.3 for the electric field distribution showed that the electric field increased near the upper electrode edge of the asymmetric electrode structure. The ferroelectric volume near the upper electrode edge which contributed to the increase of the polarization and the emission charge per electrode diameter were independent on the upper electrode diameter. Polarization and dielectric constant were decreased due to the erosion of the upper electrode with repeating the emission cycles, but they were recovered by the electrode regeneration. The degradation of the ferroelectric surface resulted in the increase of the coercive field and dielectric loss.