• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1185-1188
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• 2006

Pentacene thin film transistors (OTFTs) on flexible polyimide substrate using electroplated gate electrode and organic/high-k inorganic bilayer gate dielectric layer. Incorporation of thin atomic-layer deposited $HfO_2$ layer on the PVP organic gate dielectric layer reduced the gate leakage and as a result enhanced the current on/off ratio.

• Journal of the Korean institute of surface engineering
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• v.41 no.1
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• pp.1-5
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• 2008

In this work, improvement of mechanical and electrical properties of gate dielectric layer for flexible organic thin film transistor (OTFT) devices was investigated. In order to increase the mechanical flexibility of PVP (poly(4-vinyl phenol) organic gate dielectric, a very thin inorganic $HfO_2$ layers with the thickness of $5{\sim}20nm$ was inserted in between the spin-coated PVP layers. Insertion of the inorganic $HfO_2$ in the laminated organic/inorganic structure of PVP/$HfO_2$/PVP layer led to a dramatic reduction in the leakage current compared to the pure PVP layer. Under repetitive cyclic bending, the leakage current density of the laminated PVP/$HfO_2$/PVP layer with the thickness of 20-nm $HfO_2$ layer was not changed, while that of the single PVP layer was increased significantly. Mechanical flexibility tests of the OTFT devices by cyclic bending with 5 mm bending radius indicated that the leakage current of the laminated PVP/$HfO_2$(20 nm)/PVP gate dielectric in the device structure was also much smaller than that of the single PVP layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.309-310
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• 2006

We studied dielectric properties of OLEDs(Organic Light-emitting Diodes) depending on applied voltage (AC) of PTFE(Polytetrafluoroethylene), material of hole injection layer in structure of ITO/hole injection layer (PTFE)/emitting layer, Alq3(Tris(8-hydroxyquinolibe) Alumin)/Al. PTFE is deposited 2 [nm] as rate of 0.2~03 [${\AA}/s$] and $Alq_3$ is deposited 100 [nm] as rate of 1.3~1.5 [${\AA}/s$] m high vacuum ($5{\times}10^{-6}$[torr]). In result of these studies, we can know dielectric properties of OLEDs. Impedance is decreased depending on applied voltage variation, dielectric loss showed peak in specified voltage and showed cole-cole plot of a specimen.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.2
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• pp.73-79
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• 2018

In this paper, TM(transverse magnetic) scattering problems by a conductive strip grating between a double dielectric layer are analyzed by applying the PMM(point matching method) known as a numerical method of electromagnetic fileld. The boundary conditions are applied to obtain the unknown field coefficients, the scattered electromagnetic fields are expanded in a series of Floquet mode functions, and the conductive boundary condition is applied to analysis of the conductive strip. The most normalized reflected powers of the sharp variations in minimum values are scattered in direction of the other angles except incident angle. Generally, in the case of numerical analysis except for reflection and transmission power in free space, as the dielectric constants of the double dielectric layer increases, the reflected power increases and the transmitted power decreases relatively, respectively. The numerical results for the presented structure of this paper having a grounded double dielectric layer are shown in good agreement compared to those of the existing papers.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.21 no.1
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• pp.49-54
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• 2021

In this paper, n this paper, E-polarized electromagnetic scattering problems by a resistive strip grating between a double dielectric layer are analyzed by applying the PMM(Point Matching Method) known as a numerical method of electromagnetic fileld. The boundary conditions are applied to obtain the unknown field coefficients, and the resistive boundary condition is applied to analysis of the resistive strip. The numerical results for the normalized reflected and transmitted power are analyzed by according as the relative permittivity and thickness of the double dielectric layers, and the resistivity of resistive strip. Overall, when the resistivity of the resistive strip decreased or the relative permittivity of the dielectric layer increased, the reflected power increased, and as the reflected power increased, the transmitted power decreased relatively. Especially, as the relative permittivity of double dielectric layer increases, the minimum value of the variation curve of the reflected power shifted in the direction that the grating period decreased. The numerical results for the presented structure of this paper are shown in good agreement compared to those of the existing papers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.867-871
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• 2013

The Ti adhesion layers were deposited onto the glass substrate for transparent capacitors using $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO) dielectric thin films. Graphene was transferred onto the Ti/glass substrate after growing onto the Ni/$SiO_2$/Si using rapid-thermal pulse CVD (RTPCVD). The BMNO dielectric thin films were investigated for the microstructure, dielectric and leakage properties in the case of capacitors with and without Ti adhesion layers. Leakage current and dielectric properties were strongly dependent on the Ti adhesion layers grown for graphene bottom electrode.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.810-813
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• 2003

Application of inorganic silica-neodymia alloy films grown by sputtering technology to the dielectric layer of plasma display panel (PDP) is presented. The experimental results reveal that dielectric constant of the alloy films increases with neodymia concentration. Also, the alloy films act as band rejection color filter owing to sharp absorptions originating in the intratransition within the 4f shell of the $Nd^{3+}$ ion. In the optical band pass region, the transmittances of the alloy films show higher than those of commercial glass-like dielectrics. As a result, the luminance of PDP device with the alloy dielectric layer is higher than that of device with conventional dielectrics, indicating wider color gamut and higher color purity.

• Journal of the Korea Institute of Military Science and Technology
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• v.12 no.5
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• pp.644-651
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• 2009

In this paper, the design results of a $22.5^{\circ}$ diode phase shifter for the RADANT lens and two $11.25^{\circ}$, $22.5^{\circ}$ dielectric phase shift layers for the diode phase shifter are presented. The amount of phase shift introduced by each dielectric layer depends on the thickness and the shape of the metal strip and the electrical property of the diode. The equivalent circuit model is employed to represent the dielectric phase shift layer, and the simulated result of the equival circuit model is compared with the result of the field simulation. The measured data of the fabricated $11.25^{\circ}$, $22.5^{\circ}$ dielectric phase shift layer shows about $2^{\circ}$ phase shift error.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1418-1420
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• 2003

In this study capacitance and dielectric loss tan${\delta}$were measured with frequency changes for commercial $Z_nO$ varistors with pin-type leads and equivalent circuit simulation was proposed. The leakage inductance in pin leads and the stray caoacitance could be seperated from the dielectric characteristics of $Z_nO$ varistors by the simulation of equivalent circuit. The equivalent circuit model considered semiconduction layer, dielectric layer and depletion layer as the grain boundary structure of varistor is well fitted to the observed data.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.88-90
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• 2003

We reported an AC PDP structure with grooved front panel dielectric layer. The structure exhibits low breakdown voltage, better luminance, and better endurance to crosstalk in high Xe contents. It also shows less luminous efficacy then conventional structure because of the thinner dielectric layer, but we can apply the higher Xe contents to the grooved dielectric structure, which results in the higher luminous efficacy. We made experiments with the Xe contents from 4 to16% and total gas pressure from 400 to 600Torr. The grooved dielectric structure shows the improvement of 20% luminous efficacy and 17% luminance. The firing voltages lower about 40V at 600Torr and Xe 12, 16%. The discharge characteristics of grooved dielectric structure are verified also with 2D simulation.