• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.381-381
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• 2010

$(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility inachieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFET channel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gapswere obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of $ZrO_2$. In addition, The dielectric function (k, $\omega$), index of refraction n and the extinction coefficient k for the $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-$\varepsilon$(k, $\omega$)-REELS software package. These optical properties are similar with $ZrO_2$ dielectric thin films.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.949-955
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• 2009

In this study, we investigated the effects of Cr dopant (1.0 at% $Cr_2O_3$ sintered at $1000^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and interface state levels of ZnO using dielectric functions ($Z^*$, $M^*$, $Y^*$, $\varepsilon^*$, and $tan{\delta}$), admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). For the identification of the bulk trap levels, we examine the zero-biased admittance spectroscopy and dielectric functions as a function of frequency and temperature. Impedance and electric modulus spectroscopy is a powerful technique to characterize grain boundaries of electronic ceramic materials as well. As a result, three kinds of bulk defect trap levels were found below the conduction band edge of ZnO in 1.0 at% Cr-doped ZnO (Cr-ZnO) as 0.11 eV, 0.21 eV, and 0.31 eV. The overlapped defect levels ($Zn^{..}_i$ and $V^{\cdot}_0$) in admittance spectra were successfully separated by the combination of dielectric function such as $M^*$, $\varepsilon^*$, and $tan{\delta}$. In Cr-ZnO, the interfacial state level was about 1.17 eV by IS and MS. Also we measured the resistance ($R_{gb}$) and capacitance ($C_{gb}$) of grain boundaries with temperature using impedance-modulus spectroscopy. It have discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z"-logf plots with temperature.

• 한국통신학회논문지
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• 제31권9A호
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• pp.913-919
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• 2006

본 논문에서는 스트립 폭과 격자주기, 비유전율, 유전체 층의 두께, 그리고 TE(transverse electric) 평면파의 입사각에 따른 접지된 다층 유전체위의 저항띠 격자구조에 의한 TE 산란 문제를 수치해석 방법인 FGMM(Fourier-Galerkin Moment Method)을 이용하여 해석하였다. 유도되는 표면전류밀도는 간단한 함수인 지수함수를 사용하여 Fourier 급수로 전개하였다. 전반적으로 다층유전체의 비유전율과 두께가 증가함에 따라 반사전력이 증가하였고, 반사전력의 급변점들은 공진효과에 기인한 것으로 과거에 wood's anomallies$^{[7]}$라고 불리워졌다. 제안된 방법의 검증을 위하여 기존의 완전도체 경우인 균일 저항율 R = 0에 대한 정규화된 반사전력의 수치결과는 기존 논문들과 일치하였다.

• 한국항행학회논문지
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• 제10권3호
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• pp.198-204
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• 2006

본 논문에서는 스트립 폭과 격자주기, 유전체 층의 비유전율과 두께, 그리고 TE(transverse electric) 평면파의 입사각에 따른 접지된 유전체 평면위의 저항띠 격자구조에 의한 TE 산란 문제를 수치해석 방법인 FGMM(Fourier-Galerkin Moment Method)를 이용하여 해석하였다. 유도되는 표면전류밀도는 간단한 함수인 지수 함수를 사용하여 Fourier 급수로 전개하였다. 유전체층의 비유전율과 두께가 증가함에 따라 반사전력이 증가하였고, 반사전력의 급변점들은 공진효과에 기인한 것으로 과거에 wood's anomallies[7]라고 불리워졌다. 제안된 방법의 검증을 위하여 기존의 완전도체 경우인 균일 저항율 R = 0에 대한 정규화된 반사전력의 수치결과는 기존의 논문들과 일치하였다.

• Journal of the Optical Society of Korea
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• 제17권1호
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• pp.27-32
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• 2013

Based on the dispersive feature of the dielectric function of noble metals and the wave vector conservation in physics, both the plasma effect and the complex refractive index, which are profoundly correlated to the complex dielectric function and permeability, have been studied and analyzed. The condition to induce a bulk or a surface plasma in the visible region will not be satisfied, and there will be one solution for the real and the imaginary parts of the refractive index, restricting it only to region I of the complex plane. The results given in this work will aid in understanding the properties of light transmission at the metal/dielectric interface as characterized by the law of refraction in nature.

• 한국세라믹학회지
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• 제49권3호
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• pp.260-265
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• 2012

Impedance spectroscopy was used to monitor the hydration in the electrical/dielectric behaviors of chemical mechanical planarization (CMP)-blended cement mixtures. The electrical responses were analyzed using their equivalent circuit models, leading to the separation of the bulk and electrode based responses. The role of the CMP slurry was monitored as a function of the relative compositions of the CMP-blended cements, i.e. water, CMP slurry, and ordinary Portland cement. The presence of $Al_2O_3$ nanocrystals in the CMP slurries appeared to accelerate the hydration process, along with a more tortuous microstructure in the hydration, with enhanced hydration products. The frequency-dependent impedance spectroscopy was proven to be a highly efficient approach for evaluating the electrical/dielectric monitoring of the change in the pore structure evolution that occurs in CMP-blended cements.

• Bulletin of the Korean Chemical Society
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• 제35권5호
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• pp.1469-1478
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• 2014

Use of acetonitrile in electrolytes promotes better operation of supercapacitors. Recent efforts show that electrolytes containing acetonitrile can also function in a wide range of operating temperatures. Therefore, this paper addresses the dielectric relaxation processes, structure and dynamic properties of the bulk acetonitrile at various temperatures. Systems of acetonitrile were modeled using canonical ensemble and simulated by employing Molecular Dynamics method. Results show that interactions among the molecules were correlated within a cut-off radius while parallel and anti-parallel arrangements are observed beyond this radius at relatively high and low temperatures respectively. Furthermore, effects of C-C-N and C-H bending modes were greatly appreciated on the power spectral density of time rate change of dipole-dipole correlations whereas frequency shifts were observed on all modes at the lowest temperature under consideration. Linear variations with temperature were depicted for reorientation times and self-diffusion coefficients. Shear viscosity was also computed with a good accuracy within a certain range of the temperature as well.

• 한국세라믹학회지
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• 제40권4호
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• pp.360-364
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• 2003

Effects of sintering time upon the structures and microwave dielectric characteristics of co-substituted $Ba_{6-3x}$/S $m_{8+}$2x/ $Ti_{18}$ $O_{54}$ ceramics (x=2/3) were investigated. Prolonged sintering had significant effects upon the qf value and temperature coefficient, and a high Qf value (10,600 GHz) was obtained in the present ceramics combined with high-$\varepsilon$ (80) and near-zero temperature coefficient.t..

• 한국통신학회논문지
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• 제11권6호
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• pp.371-378
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• 1986

정현적으로 진동하는 유전체 경계면에서 전자파(TM파)의 반사, 투과현상을 진동하는 임의의 순간에 등속운동이라 가정하여 Lorentz 변환을 확대적용하여 이론적으로 해석하였다. 전자파의 입사각, 운동매질의 유전율, 진동속도의 함수로써 반사, 투과특성을 수치계산 검토하였다.

• 한국세라믹학회지
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• 제28권4호
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• pp.297-304
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• 1991

Dielectric hysteresis characteristics of Pb(Zr0.52Ti0.48)O3 ceramics have been investigated as a function of the amount of MnO2 addition ranged from 0.0 wt% in Pb(Zr0.52Ti0.48)O3 ceramics enhanced the dielectric strength, aging effect and remanent polarization, while reduced the coercive field. These results could be explained by the effect of Mn-Vo association due to the substitution of Mn for the (Zr, Ti) site in PZT.