• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.381-381
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• 2010

$(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility inachieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFET channel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gapswere obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of $ZrO_2$. In addition, The dielectric function (k, $\omega$), index of refraction n and the extinction coefficient k for the $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-$\varepsilon$(k, $\omega$)-REELS software package. These optical properties are similar with $ZrO_2$ dielectric thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.949-955
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• 2009

In this study, we investigated the effects of Cr dopant (1.0 at% $Cr_2O_3$ sintered at $1000^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and interface state levels of ZnO using dielectric functions ($Z^*$, $M^*$, $Y^*$, $\varepsilon^*$, and $tan{\delta}$), admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). For the identification of the bulk trap levels, we examine the zero-biased admittance spectroscopy and dielectric functions as a function of frequency and temperature. Impedance and electric modulus spectroscopy is a powerful technique to characterize grain boundaries of electronic ceramic materials as well. As a result, three kinds of bulk defect trap levels were found below the conduction band edge of ZnO in 1.0 at% Cr-doped ZnO (Cr-ZnO) as 0.11 eV, 0.21 eV, and 0.31 eV. The overlapped defect levels ($Zn^{..}_i$ and $V^{\cdot}_0$) in admittance spectra were successfully separated by the combination of dielectric function such as $M^*$, $\varepsilon^*$, and $tan{\delta}$. In Cr-ZnO, the interfacial state level was about 1.17 eV by IS and MS. Also we measured the resistance ($R_{gb}$) and capacitance ($C_{gb}$) of grain boundaries with temperature using impedance-modulus spectroscopy. It have discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z"-logf plots with temperature.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.9A
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• pp.913-919
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• 2006

In this paper, TE(transverse electric) scattering problems by a resistive strip grating over grounded dielectric multilayers according to the strip width and grating period, the relative permittivity and thickness of dielectric multilayers, and incident angles of a TE plane wave are analyzed by applying the FGMM(Fourier-Galerkin Moment Method) known as a numerical procedure. The induced surface current density is simply expanded in a Fourier series by using the exponential function as a simple function. Generally, the relected power gets increased according as the relative permittivity and thickness of dielectric multilayers gets increased, the sharp variations of the reflected power are due to resonance effects that take place and were previously called wood's anomallies$^{[7]}$. To verify the validity of the proposed method, the numerical results of normalized reflected power for the uniform resistivity R = 0 as a conductive strip case show in good agreement with those in the existing paper.

• Journal of Advanced Navigation Technology
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• v.10 no.3
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• pp.198-204
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• 2006

In this paper, TE(transverse electric) scattering problems by a resistive strip grating on a grounded dielectric plane according to the strip width and grating period, the relative permittivity and thickness of dielectric layer, and incident angles of a TE plane wave are analyzed by applying the FGMM(Fourier-Galerkin Moment Method) known as a numerical procedure. The induced surface current density is simply expanded in a Fourier series by using the exponential function as a simple function. The reflected power gets increased according as the relative permittivity and thickness of dielectric multilayers gets increased, the sharp variations of the reflected power are due to resonance effects were previously called wood's anomallies[7]. To verify the validity of the proposed method, the numerical results of normalized reflected power for the uniform resistivity R = 0 as a conductive strip case show in good agreement with those in the existing paper.

• Journal of the Optical Society of Korea
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• v.17 no.1
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• pp.27-32
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• 2013

Based on the dispersive feature of the dielectric function of noble metals and the wave vector conservation in physics, both the plasma effect and the complex refractive index, which are profoundly correlated to the complex dielectric function and permeability, have been studied and analyzed. The condition to induce a bulk or a surface plasma in the visible region will not be satisfied, and there will be one solution for the real and the imaginary parts of the refractive index, restricting it only to region I of the complex plane. The results given in this work will aid in understanding the properties of light transmission at the metal/dielectric interface as characterized by the law of refraction in nature.

• Journal of the Korean Ceramic Society
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• v.49 no.3
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• pp.260-265
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• 2012

Impedance spectroscopy was used to monitor the hydration in the electrical/dielectric behaviors of chemical mechanical planarization (CMP)-blended cement mixtures. The electrical responses were analyzed using their equivalent circuit models, leading to the separation of the bulk and electrode based responses. The role of the CMP slurry was monitored as a function of the relative compositions of the CMP-blended cements, i.e. water, CMP slurry, and ordinary Portland cement. The presence of $Al_2O_3$ nanocrystals in the CMP slurries appeared to accelerate the hydration process, along with a more tortuous microstructure in the hydration, with enhanced hydration products. The frequency-dependent impedance spectroscopy was proven to be a highly efficient approach for evaluating the electrical/dielectric monitoring of the change in the pore structure evolution that occurs in CMP-blended cements.

• Bulletin of the Korean Chemical Society
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• v.35 no.5
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• pp.1469-1478
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• 2014

Use of acetonitrile in electrolytes promotes better operation of supercapacitors. Recent efforts show that electrolytes containing acetonitrile can also function in a wide range of operating temperatures. Therefore, this paper addresses the dielectric relaxation processes, structure and dynamic properties of the bulk acetonitrile at various temperatures. Systems of acetonitrile were modeled using canonical ensemble and simulated by employing Molecular Dynamics method. Results show that interactions among the molecules were correlated within a cut-off radius while parallel and anti-parallel arrangements are observed beyond this radius at relatively high and low temperatures respectively. Furthermore, effects of C-C-N and C-H bending modes were greatly appreciated on the power spectral density of time rate change of dipole-dipole correlations whereas frequency shifts were observed on all modes at the lowest temperature under consideration. Linear variations with temperature were depicted for reorientation times and self-diffusion coefficients. Shear viscosity was also computed with a good accuracy within a certain range of the temperature as well.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.360-364
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• 2003

Effects of sintering time upon the structures and microwave dielectric characteristics of co-substituted $Ba_{6-3x}$/S $m_{8+}$2x/ $Ti_{18}$ $O_{54}$ ceramics (x=2/3) were investigated. Prolonged sintering had significant effects upon the qf value and temperature coefficient, and a high Qf value (10,600 GHz) was obtained in the present ceramics combined with high-$\varepsilon$ (80) and near-zero temperature coefficient.t..

• The Journal of Korean Institute of Communications and Information Sciences
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• v.11 no.6
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• pp.371-378
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• 1986

In the reflection and transmission of a transverse magnetic wave(TM wave) from a dielectric plane osillating sinusoidally perpendicular to ist surface, one could assume that the boundary moves with a uniform nelocity equal to the instantaneous socillating velodity. According to the extended Lorentz transform, the reflected and the transmitted field are obatained as the function of the dielectric permittivity, the oscillating velocities, and the incident angles. The above results are analyzed graphically.

• Journal of the Korean Ceramic Society
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• v.28 no.4
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• pp.297-304
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• 1991

Dielectric hysteresis characteristics of Pb(Zr0.52Ti0.48)O3 ceramics have been investigated as a function of the amount of MnO2 addition ranged from 0.0 wt% in Pb(Zr0.52Ti0.48)O3 ceramics enhanced the dielectric strength, aging effect and remanent polarization, while reduced the coercive field. These results could be explained by the effect of Mn-Vo association due to the substitution of Mn for the (Zr, Ti) site in PZT.