• Journal of the Semiconductor & Display Technology
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• v.14 no.2
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• pp.41-45
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• 2015

From 20nm technology node, the finFET has become standard device for ULSI's. However, the finFET process made stacking gate non-volatile memory obsolete. Some reported capacitor-less DRAM structure by utilizing the FBE. We present possible non-volatile memory device structure similar to the dual gate MOSFET. One of the gates is left floating. Since body of the finFET is only 40nm thick, control gate bias can make electron tunneling through the floating gate oxide which sits across the body. For programming, gate is biased to accumulation mode with few volts. Simulation results show that the programming electron current flows at the interface between floating gate oxide and the body. It also shows that the magnitude of the programming current can be easily controlled by the drain voltage. Injected electrons at the floating gate act similar to the body bias which changes the threshold voltage of the device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.536-540
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• 2004

A novel nematic liquid crystal (LC) cell with splay structure exhibiting wide viewing angle, fast response time and high transmittance at the same time has been developed. With rubbed homeotropic alignment in parallel directions, the device shows bend alignment in the absence of vertical electric field. However, with applied high voltage in a pulse form, the LC shows a optically compensated splay (OCS) orientation such that the mid-director is parallel to a substrate and at both surfaces the LCs are aligned vertically in parallel direction. In the device, the birefringence of the cell becomes tunable with applying voltage, i.e., the amount of light passed through the cell can be controlled by controlling the orientation of the LC. Since the OCS cell has a self-compensation structure such that the LC has a mirror symmetry along the mid-director, the device shows a wide viewing angle with only a single domain and a fast response time.

• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.107-112
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• 2011

This paper is for improving the RF frequency performance of a fabricated 100nm ${\Gamma}$-gate MHEMT, scaling down vertically for the epitaxy-structure layers of the device. Hydrodynamic simulation parameters are calibrated for the fabricated MHEMT with the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}$As heterostructure grown on the GaAs substrate. With these calibrated parameters, simulations for the vertically-scaled epitaxial layers of the device are performed and analyzed for DC/RF characteristics, including the quantization effect due to the thickness reduction of InGaAs channel layer. A newly designed epitaxy-structure device shows higher extrinsic transconductance, $g_m$ of 1.556 S/mm, and higher frequency performance, $f_T$ of 222.5 GHz and $f_{max}$ of 849.6 GHz.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.12
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• pp.2249-2254
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• 2008

A non-thermal micron size plasma needle is applicable for medical treatment because it includes radicals, charged particles, ultraviolet emission, and strong electric fields. The electric fields around the plasma needle device driven by a radio frequency wave are investigated in order to calculate the power delivered to the cell. A commercial multi-physics code, CFD-ACE, was utilized for the calculation of electric fields for the optimization of the needle structure. The electric field and energy absorption profiles are presented with the variation of the device structure and the distance between the needle and tissues. The living tissues effectively absorb the radio frequency power from the plasma needle device with the covered pyrex structure.

• Journal of IKEEE
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• v.19 no.4
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• pp.514-519
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• 2015

We propose the multiple gate structure of double gate junctionless metal oxide silicon field oxide transistor (JL MOSFET) for device optimization. Since different workfunction within multiple metal gates, electric potential nearby source and drain region is modulated in accordance with metal gate length. On current, off current and threshold voltage are influenced with gate structure and make possible to meet some device specification. Through the device simulation work, performance optimization of double gate JL MOSFETs are introduced and investigated.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.349-353
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• 1999

In this paper, to fabricate the AC power electroluminescent device (PELD) with high brightness, new structure that constructed single emissive layer between electrodes was proposed. Dielectric and phosphor material structure that constructed single emissive layer between electrodes was proposed. Dielectric and phosphor material were BaTiO3 and ZnS:Cu respectively. Fabricated AC power EL devices were estimated by optical and electrical properties of EL spectrum, brightness, CIE coordinate system, transferred charge density and EL emission wave in time domain. With above results, we found that brightness of newly proposed AC powder EL power EL device was 2754 cd/m2 at 100V, 400 Hz and compared with conventional device structure.

• Proceedings of the Earthquake Engineering Society of Korea Conference
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• 2002.03a
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• pp.359-366
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• 2002

Direct Integration method(D.I) and Mode Superposition method(M.S) are used widely in dynamic analysis method for structure with isolation devices. D.I is used firstly because it is consider to nonlinearity of isolation device. M.S is applied in elastic region, but it is difficult to apply M.S because coincidence with othogonality condition in the case of adding the damping of isolation device. In this study, the method for calculation of damping ratio of isolated structure is proposed, and proposed method is verified with analysis for example structure.

• Advances in nano research
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• v.3 no.1
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• pp.39-47
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• 2015

We study a device structure which can be used to generate pure valley current and valley polarized current using quantum adiabatic pumping. The design of the structure allows the flexibility of changing the structure from one for pure valley current generation to one for valley polarized current generation by changing the applied electric potentials through changing the symmetry of the structure. The device is useful for the development of valleytronic devices.

• Korean Journal of Materials Research
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• v.28 no.1
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• pp.18-23
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• 2018

To study the impedance characteristics of a fluorescent OLED according to the device structure, we fabricated Device 1 using ITO / NPB / $Alq_3$ / Liq / Al, Device 2 using ITO / 2-TNATA / NPB / $Alq_3$ / Liq / Al, and Device 3 using ITO / 2-TNATA / NPB / SH-1:BD / $Alq_3$ / Liq / Al. The current density and luminance decreased with an increasing number of layers of the organic thin films in the order of Device 1, 2, 3, whereas the current efficiency increased. From the Cole-Cole plot at a driving voltage of 6 V, the maximum impedance values of Devices 1, 2, and 3 were respectively 51, 108, and $160{\Omega}$ just after device fabrication. An increase in the impedance maximum value is a phenomenon caused by the charge mobility and the resistance between interfaces. With the elapse of time after the device fabrication, the shape of the Cole-Cole plot changed to a form similar to 0 or a lower voltage due to the degradation of the device. As a result, we were able to see that an impedance change in an OLED reflects the characteristics of the degradation and the layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.910-913
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• 2003

In order to enhance performance, stability, and brightness of inorganic blue-light emitting EL device, barrier layer structure and pulsed laser annealing(PLA) treatment were introduced. The barrier layer structure was utilized for improving brightness of the device and instead of thermal annealing, pulsed laser annealing process was used. From this study, optimum barrier layer thickness and number of pulsed laser irradiation are established.