• 제목/요약/키워드: device simulation

검색결과 2,652건 처리시간 0.029초

Self-Biasing 효과로 높은 홀딩 전압을 갖는 SCR 기반 양방향 ESD 보호 소자에 관한 연구 (A Study on SCR-based Dual Directional ESD Protection Device with High Holding Voltage by Self-Biasing Effect)

  • 정장한;정승구;구용서
    • 전기전자학회논문지
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    • 제26권1호
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    • pp.119-123
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    • 2022
  • 본 논문은 추가 기생 바이폴라 BJT로 인해 높은 홀딩전압을 갖는 ESD 보호소자에 Self-Biasing 구조를 추가하여 12V 급 어플리케이션에 적합한 새로운 ESD 보호소자를 제안한다. 제안된 소자의 동작원리와 전기적 특성 검증을 위해 Synopsys사의 TCAD Simulation을 사용하여 current density simulation과 HBM simulation을 수행하였고 추가된 Self-Biasing 구조 동작을 확인하였다. Simulation 결과 제안된 ESD 보호소자는 기존의 ESD 보호소자와 비교하여 높은 수준의 홀딩전압을 갖는 것을 확인하였고 이는 듀얼구조로 인한 높은 면적효율과 12V급 어플리케이션에서 충분한 래치업 면역 특성을 가질 것으로 기대된다.

Hydro Dynamic Model을 이용한 CMOS의 파괴특성의 Transient Simulation해석 (Transient Simulation of CMOS Breakdown characteristics based on Hydro Dynamic Model)

  • 최원철
    • 한국산업융합학회 논문집
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    • 제5권1호
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    • pp.39-43
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    • 2002
  • In present much CMOS devices used in VLSI circuit and Logic circuit. With increasing a number of device in VLSI, the confidence becomes more serious. This paper describe the mechanism of breakdown on CMOS, especially n-MOS, based on Hydro Dynamic model with device self-heating. Additionally, illustrate the CMOS latch-up characteristics on simplified device structure on this paper.

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Characteristics Investigation of Organic Light Emitting Diodes Using Numerical Device Simulation

  • Lee, Yang-Soo;Park, Jae-Hoon;Choi, Jong-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.28-31
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    • 2003
  • We have investigated the electrical characteristics of the organic light emitting diodes (OLEDs) using the numerical device simulation. The current-voltage characteristics, the charge carrier concentrations, and the recombination rate profiles are presented. The simulation results of the effects of the various device parameters on the device characteristics are discussed.

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Touch Effect of Mental Simulation in Online Fashion Shopping -The Role of Instrumental and Autotelic Needs for Touch-

  • Lee, Ha Kyung;Choi, Dooyoung
    • 한국의류학회지
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    • 제45권2호
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    • pp.376-389
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    • 2021
  • This study investigates the effects of the interplay of device types and the need for touch (NFT) on product attitudes and determines how the mental simulation of touch mediates such relationships. Specifically, we test the roles of instrumental and autotelic NFT in the moderated mediation effect of mental simulation of touch. We instructed the potential participants to shop for a leather jacket on a webpage. With a total of 152 data points from the responses of participants who used a laptop and a touch device that uses a direct-touch interface (e.g., tablets), we conducted descriptive statistics, analysis of variance, and PROCESS procedures using SPSS 20.0. The results show a greater mental simulation for touch when using a touch device than a laptop. When individuals' instrumental NFT is low, using a touch device while shopping online heightens mental simulation of touch, which impacts product attitudes. In particular, such a moderated mediation effect strengthens as the value of individuals' autotelic NFT increases. However, when individuals' instrumental NFT is high, a touch device cannot drive mental simulation for touch, increasing favorable attitudes toward the product.

무선망 설계/최적화 시뮬레이션 툴 의 다양한 신뢰도 향상 기법 (Various Techniques for Improving of the Reliability of the Wireless Network Design/Optimization Simulation Tool)

  • 전현철;류재현;박상진;박주열;김정철
    • 한국정보통신설비학회:학술대회논문집
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    • 한국정보통신설비학회 2006년도 하계학술대회
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    • pp.39-42
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    • 2006
  • There are various analysis functions(including prediction of path loss, analyzing of capacity and coverage, etc.) of simulation tool to design and optimize the mobile communication network. Its reliability absolutely effects the performance of mobile communication network. Especially as the wireless network highly advancing focused on data service, it more needs to research and develop on the standard establishment of reliability of the simulation tool. Also it is important the systematic research how to improve the reliability of simulation tool. In this paper, to give the concrete process and skill about how to improve reliability, we define the kinds of reliability at first. And then we explain the comparison results between real field measurement data and theoretic simulation data.

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스마트기기 게임에 적합한 실시간 번개 시뮬레이션 연구 (A Study on Real-Time Lightning Simulation for Smart Device)

  • 박성배;오규환
    • 한국게임학회 논문지
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    • 제13권4호
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    • pp.35-46
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    • 2013
  • 본 논문에서는 스마트기기에 적합한 실시간 번개 시뮬레이션을 제시한다. 물리학에 기반을 가지는 Dielectric Breakdown Model을 근사하여 스마트기기 환경에서 실시간 구현이 가능한 번개 경로 결정 알고리즘을 제시하며, 여러 개의 번개를 동시에 그리고 실시간으로 렌더링 할 수 있는 방법을 제시한다. 마지막으로 번개의 경로를 실시간으로 수정할 수 있는 방법을 제시하여 유저와 실시간 상호작용이 가능하게 한다. 본 논문에서 제시한 번개 시뮬레이션은 스마트기기 환경에서 번개가 주 요소인 게임에서 사용이 될 것으로 판단된다.

모의비행훈련장치 제도 개선방안 연구 (A Study on the Improvement of the Flight Simulation Training Device System)

  • 김세준;조영진
    • 한국항공운항학회지
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    • 제29권3호
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    • pp.66-75
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    • 2021
  • As the domestic aviation industry develops, demand for pilots is increasing. As a result, the demand for flight training using flight simulation training devices that implement the same or similar interior of aircraft is also increasing. Despite this increase in demand, domestic laws, regulations and management systems related to flight simulation training devices have remained unchanged since 2009. As a result, the criteria for designation of new or developed flight simulation training devices are ambiguous. In addition, proper improvement of the current system should be prioritized for designation of new devices such as UAM and VR, along with developing flight simulation training devices. It is intended to present measures to improve the domestic flight simulation training system by investigating and analyzing advanced cases overseas.

MAS 기반 대피시뮬레이션을 활용한 안전약자 대피지원 개선방안 연구 (A Study for Evacuation Assistance to Vulnerable People by MAS Based Evacuation Simulation)

  • 정태호;박상현;장재순
    • 한국안전학회지
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    • 제32권1호
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    • pp.121-127
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    • 2017
  • Recently, many patients in a hospital are threatened life by fire disaster. Because many patients like vulnerable people have more evacuation problem than ordinary person. So a patient who can escape by oneself with walking assistance device like crutches or wheelchair and another patient who can't escape by oneself are should be supported safety technologies and service. Earlier research of 'hospital evacuation' led by actual experiments or computer evacuation simulation. Actual experiment is effective to gain credibility of result but it is difficult for patients to experiment repeatedly and it requires consideration for spatial problem and economic problems. Although computer evacuation simulation have been used to solve these problems, almost have concluded only results based on velocity without evacuation device. In this study, evacuation results with support device application or not are analysed used by computer evacuation simulation based on MAS(Multi Agent System). As a result, it is drawn through proof of efficiency of evacuation device in the vertical space like stairs that can improve the evacuation plan for vulnerable people in the hospital.

Derivation of Current-Voltage Equation for OLED using Device Simulation

  • Lee, Sang-Gun;Hattori, Reiji
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1212-1215
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    • 2009
  • The theoretical equations for J-V characteristics in an OLED was derived according to the internal carrier emission equation based on a diffusion model at Schottky barrier contact and the mobility equation based on the Pool-Frenkel model. The J-V characteristics of OLED are presented using a behavioral model for analog systems (Verilog-A language), and the accuracy of this model was verified by comparing with the device simulation results.

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A Design Evaluation of Strained Si-SiGe on Insulator (SSOI) Based Sub-50 nm nMOSFETs

  • Nawaz, Muhammad;Ostling, Mikael
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제5권2호
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    • pp.136-147
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    • 2005
  • A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.