• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.8
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• pp.1-12
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• 2001

The adaptive learning circuit is designed on the basis of modeling of MFSFET (Metal-Ferroelectric-Semiconductor FET) and the numerical results are analyzed. The output frequency of the adaptive learning circuit is inversely proportional to the source-drain resistance of MFSFET and the capacitance of the circuit. The saturated drain current with input pulse number is analogous to the ferroelectric polarization reversal. It indicates that the ferroelectric polarization plays an important role in the drain current control of MFSFET. The output frequency modulation of the adaptive learning circuit is investigated by analyzing the source-drain resistance of MFSFET as functions of input pulse numbers in the adaptive learning circuit and the dimensionality factor of the ferroelectric thin film. From the results, the frequency modulation characteristic of the adaptive learning circuit are confirmed. In other words, adaptive learning characteristics which means a gradual frequency change of output pulse with the progress of input pulse are confirmed. Consequently it is shown that our circuit can be used effectively in the neuron synapses of nueral networks.

• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.233-237
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• 2005

In the device structure of ITO/hole injection layer/N, N'-biphenyl-N, N'-bis-(1-naphenyl)-[1,1'-biphenyl]4,4'-diamine(NPB)/tris(8-hydroxyquinoline) aluminum$(Alq_3)/Al$, we investigated an effect of hole-injection materials (PTFE, PVK) on the electrical characteristics and efficiency of organic light-emitting diodes. A thermal evaporation was performed to make a thickness of NPB layer with a evaporation rate of $0.5\~1.0\;\AA/s$ in a base pressure of $5\times10^{-6}$ Torr. We measured current-voltage characteristics and efficiency with a thickness variation of hole-injection layer. The PTFE and PVK hole-injection layer improve a performance of the device in several aspects, such as good mechanical junction, reducing the operating voltage and energy band adjustment. Compared with the devices without a hole-injection layer, we have obtained that an optimal thickness of NPB was 20 nm in the device structure of $ITO/NPB/Alq_3/Al$. And using the PTFE or PVK hole-injection layer, the external quantum efficiencies of the devices were improved by $24.5\%\;and\;51.3\%$, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.1
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• pp.83-88
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• 2002

To increase the device linearities and the breakdown-voltages of FETs, $Al_{0.25}$G $a_{0.75}$As/I $n_{0.25}$G $a_{0.75}$As/A $l_{0.25}$G $a_{0.75}$As partially doped channel FET(DCFET) structures are proposed. The metal insulator-semiconductor(MIS) like structures show the high gate-drain breakdown voltage(-20V) and high linearities. We propose a partially doped channel structure to enhance the device linearity to the homogeneously doped channel structure. The physics of partially doped channel structure is investigated with 2D device simulation. The devices showed the small ripple of the current cut-off frequency and the power cut-off frequency over the wide bias range. bias range.

• Journal of IKEEE
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• v.19 no.1
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• pp.101-109
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• 2015

As the number of smartphone users grows, number of applications and the expected overall functionality in a smartphone grow simultaneously. With ever-so increasing expectations comes intense competition to squeeze in myriads of functions in a limited space that is only getting 'slimmer' by the year. In order to achieve this, companies often decrease the size of components in smartphones - battery connectors in particular. While they may fit, smaller battery connectors have their disadvantages due to the heat generated by the high current flow in the circuits. In collaborating with Korea's leading battery connector manufacturers, this research presents current issues and design concepts that should be considered when engineers design power connectors based on their electrical and thermal analysis.

• Proceedings of the KIEE Conference
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• 2002.07d
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• pp.2344-2346
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• 2002

A vacuum control system has been developed for using Ethernet Multi Serial Device Severs (EMSDS) for the Pohang Accelerator Laboratory (PAL) storage ring. There are 124 vacuum ion pumps at the storage ring. It was a very important problem to solve the problem how to control such a big number of vacuum pumps distributed around the ring. After discussions, we decided to develop a serial to ethernet interrace device sever that will be mounted in the control system rack. It has a 32-bits microprocessor embedded Linux, 12 ports RS485 (or RS232) slave interface. one channel 10/100BaseTx ethernet host port, one channel UART host port, and 16 Mbytes large memory buffer. These vacuum pumps are connected to Ion-Pump serial controllers, which chop the AC current so as to control the current in the pumps. The EMSDS connect either 100BaseTx or 10BaseT ethernet networks to asynchronous serial ports for communication with serial device. It can simultaneously control up to 12 ion-pump serial controllers. 12 EMSDS are connected to a personal computer (PC) through the network. The PC can automatically control the EMSDS by sending a set of commands through the TCP/IP network. Upon receiving a command from a PC running under Windows2000 through the network, the EMSDS communicate through the stave serial interrace ports to ion-pump controller. We added some software components on the top of EPICS (Experimental Physics and Industrial Control System) toolkit.

• Transactions on Electrical and Electronic Materials
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• v.9 no.3
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• pp.105-109
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• 2008

Electrical characteristics of organic light-emitting diodes were investigated by varying a hole-size in evaporation boat in the device structure of ITO/tris(8-hydroxyquinoline) aluminum$(Alq_3)$/Al. The device was manufactured using a thermal evaporation under a base pressure of $5{\times}10^{-6}$ Torr. The $Alq_3$ emitting organics were evaporated to be a thickness of 100 nm at a deposition rate of $1.5{\AA}/s$. A cylindrical-shaped evaporation boat was made out of stainless steel with a small size of hole on top of the boat. Several evaporation boats were made having a different hole size on top; 0.8 mm, 1.0 mm, 1.5 mm, and 3.0 mm. We found that when the hole size on top of the evaporation boat is 1.0 mm, the average roughness is rather smoother compared to the other ones. Also, luminance and external quantum efficiency are superior to the others. Compared to the ones from the devices made with the hole-size of 0.8 mm boat. The luminance and external quantum efficiency of the device made with the hole-size of 1.0 mm boat were improved by a factor of seventy and thirty three, respectively. Also operating voltage is reduced to 2 V.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.245.2-245.2
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• 2013

Solution processed organic photovoltaic devices have relatively less attention compared to polymer photovoltaic devices even though they have high possibility to be developed because they have both advantages of polymer and organic, such as solution processable, no synthetic batch dependence of photovoltaic performance, high purity and high charge carrier mobility as well as relatively high efficiency (~7%). In addition, solution processed organic photovoltaic devices have an advantage of easiness to study the relationship between the molecular structure and photovoltaic performance due to its simple structure. In this work, five isoindigo based low band gap donor-acceptor-donor (D-A-D) small molecules with different electron donating strength were synthesized for investigating the relationship between the molecular structure and photovoltaic performance, especially, investigating the effects of different electron donating effect of donor group in isoindigo backbone to photovoltaic device performance. The variation of electron donating strength of donor group strongly affected the optical, thermal, electrochemical and photovoltaic device performances of isoindigo organic materials. The highest power conversion efficiency of ~3.2% was realized in bulk heterojuction photovoltaic device consisted of the ID3T as donor and PC70BM as acceptor. This work demonstrates the great potential of isoindigo moieties as electron deficient units as well as guideline for synthesis of donor-acceptor-donor (D-A-D) small molecules for realizing highly efficient solution processed organic photovoltaic devices.

• Journal of the Korean Magnetics Society
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• v.25 no.5
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• pp.149-155
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• 2015

The ECR (Electron Cyclotron Resonance) Ar ion milling was manufactured to fabricate the device of thin film. The ECR ion milling system applied to the device etching operated by a power of 600W, a frequency of 2.45 GHz, and a wavelength of 12.24 cm and transferred by a designed waveguide. In order to match one resonant frequency, a magnetic field of 908 G was applied to a cavity inside of ECR. The Ar gas intruded into a cavity and created the discharged ion beam. The surface of target material was etched by the ion beam having an acceleration voltage of 1000 V. The formed devices with a width of $1{\mu}m{\sim}9{\mu}m$ on the GMR-SV (Giant magnetoresistance-spin valve) multilayer after three major processes such as photo lithography, ion milling, and electrode fabrication were observed by the optical microscope.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• Progress in Medical Physics
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• v.20 no.2
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• pp.51-61
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• 2009

A Compton camera, which is based on the geometrical interpretation of Compton scattering, is a very promising gamma-ray imaging device considering its several advantages over the conventional gamma-ray imaging devices: high imaging sensitivity, 3-D imaging capability from a fixed position, multi-tracing functionality, and almost no limitation in photon energy. In the present study, a Monte Carlo-based, user-friendly Compton imaging simulator was developed in the form of a graphical user interface (GUI) based on Geant4 and $MATLAB^{TM}$. The simulator was tested against the experimental result of the double-scattering Compton camera, which is under development at Hanyang University in Korea. The imaging resolution of the simulated Compton image well agreed with that of the measured image. The imaging sensitivity of the measured data was 2~3 times higher than that of the simulated data, which is due to the fact that the measured data contains the random coincidence events. The performance of a stacking-structure type Compton camera was evaluated by using the simulator. The result shows that the Compton camera shows its highest performance when it uses 4 layers of scatterer detectors.