• Title/Summary/Keyword: device degradation

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Long-term Air Stability of Small Molecules passivated-Graphene Field Effect Transistors

  • Shin, Dong Heon;Kim, Yoon Jeong;Kim, Sang Jin;Moon, Byung Joon;Oh, Yelin;Ahn, Seokhoon;Bae, Sukang
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.237.1-237.1
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    • 2016
  • Electrical properties of graphene-based field effect transistors (G-FETs) can be degraded in ambient conditions owing to physisorbed oxygen or water molecules on the graphene surface. Passivation technique is one of a fascinating strategy for fabrication of G-FETs, which allows to sustain electrical properties of graphene in the long term without disrupting its inherent properties: transparency, flexibility and thinness. Ironically, despite its importance in producing high performance graphene devices, this method has been much less studied compared to patterning or device fabrication processes. Here we report a novel surface passivation method by using atomically thin self-assembled alkane layers such as C18- NH2, C18-Br and C36 to prevent unintentional doping effects that can suppress the degradation of electrical properties. In each passivated device, we observe a shift in charge neutral point to near zero gate voltage and it maintains the device performance for 1 year. In addition, the fabricated PG-FETs on a plastic substrate with ion-gel gate dielectrics exhibit not only mechanical flexibility but also long-term stability in ambient conditions. Therefore, we believe that these highly transparent and ultra-thin passivation layers can become a promising candidate in a wide range of graphene based electronic applications.

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Effect of the Plasma-assisted Patterning of the Organic Layers on the Performance of Organic Light-emitting Diodes

  • Hong, Yong-Taek;Yang, Ji-Hoon;Kwak, Jeong-Hun;Lee, Chang-Hee
    • Journal of Information Display
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    • v.10 no.3
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    • pp.111-116
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    • 2009
  • In this paper, a plasma-assisted patterning method for the organic layers of organic light-emitting diodes (OLEDs) and its effect on the OLED performances are reported. Oxygen plasma was used to etch the organic layers, using the top electrode consisting of lithium fluoride and aluminum as an etching mask. Although the current flow at low voltages increased for the etched OLEDs, there was no significant degradation of the OLED efficiency and lifetime in comparison with the conventional OLEDs. Therefore, this method can be used to reduce the ohmic voltage drop along the common top electrodes by connecting the top electrode with highly conductive bus lines after the common organic layers on the bus lines are etched by plasma. To further analyze the current increase at low voltages, the plasma patterning effect on the OLED performance was investigated by changing the device sizes, especially in one direction, and by changing the etching depth in the vertical direction of the device. It was found that the current flow increase at low voltages was not proportional to the device sizes, indicating that the current flow increase does not come from the leakage current along the etched sides. In the etching depth experiment, the current flow at low voltages did not increase when the etching process was stopped in the middle of the hole transport layer. This means that the current flow increase at low voltages is closely related to the modification of the hole injection layer, and thus, to the modification of the interface between the hole injection layer and the bottom electrode.

Development of electro hydraulic ballast remote valve control system with diagnostic function using redundant modbus communication (이중화 모드버스 통신을 이용한 퍼지기반 고장진단기능을 가진 선박 밸러스트 전기유압식 원격밸브제어시스템 개발)

  • Kim, Jong Hyun;Yu, Yung Ho
    • Journal of Advanced Marine Engineering and Technology
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    • v.38 no.3
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    • pp.292-301
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    • 2014
  • This paper describes development of distributed type independent electro-hydraulic ballast valve remote control system with diagnostic function based on fuzzy inference using redundant Modbus communication and ethernet Modbus TCP/IP. Diagnostic function estimate degradation of system components and diagnose system faults, which results in shortage of fault maintenance time and improvement of system safety. Slave devices which control each valve and master device which command, monitor and diagnose slave system are developed. Slave devices are connected to master device with redundant Modbus networks and master device is connected to ship's integrated control system with Modbus TCP/IP. Also this paper describes development of simulator to test and confirm whether developed system can be integrated with ship's integrated control and monitoring system.

Recent Progress in Organic Thin Film Transistor on the Plastic Substrates

  • Suh, Kyung-Soo;Kang, Seung-Youl;Ahn, Seong-Deok;Oh, Ji-Young;You, In-Kyu;Kim, Gi-Hyun;Baek, Kyu-Ha;Kim, Chul-Am;Hwang, Chi-Sun;KoPark, Sang-Hee;Yang, Yong-Suk;Chung, Sung-Mook;Lee, Jeong-Ik;Do, Lee-Mi;Chu, Hye-Yong;Kang, Kwang-Yong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.61-63
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    • 2005
  • Pentacene based OTFT on PC and PES plastic substrates have been fabricated in a scale of 5 inches. We could get a small OTFT device enough to be applicable for AMOLED by acquiring the at least misalignment margin through a contact aligner. And also we could find out the degradation of device parameter through the integration processes and improve the properties by using a buffer layer as an etch stopper in an active patterning. Through these, the mobility of device is more than about $0.2cm^2/Vs$ and $I_{on}/I_{off}$ is higher than $10^5$.

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Blazed $GxL^{TM}$ Device for Laser Dream Theatre at the Aichi Expo 2005

  • Ito, Yasuyuki;Saruta, Kunihiko;Kasai, Hiroto;Nshida, Masato;Yamaguchi, Masanari;Yamashita, Keitaro;Taguchi, Ayumu;Oniki, Kazunao;Tamada, Hitoshi
    • Journal of Information Display
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    • v.8 no.2
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    • pp.10-14
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    • 2007
  • A blazed $GxL^{TM}$ device is described as having high optical efficiency (> 70% for RGB lasers), and high contrast ratio (> 10,000:1), and that is highly reliable when used in a large-area laser projection system. It has a robust design and precise stress control technology to maintain a uniform shape (bow and tilt) of more than 6,000 ribbons, a $0.25-{\mu}m$ CMOS compatible fabrication processing and planarization techniques to reduce fluctuation of the ribbons, and a reliable Al-Cu reflective film that provided protection against a high-power laser. No degradation in characteristics of the GxL device is observed after operating a 5,000- lumen projector for 2,000 hours and conducting 2,000 temperature cycling tests at $-20^{\circ}C$ and $+80^{\circ}C$. At the 2005 World Exposition in Aichi, Japan the world's largest laser projection screen with a size of 2005 inches (10 m ${\times}$ 50 m) and 6 million pixels (1,080 ${\times}$ 5,760) was demonstrated.

The Development of an Algorithm for Internal Defect Inspection of Concrete using Ultrasonic Detective Device and Radar Equipment (초음파 및 레이더를 활용한 콘크리트 내부결함탐상 알고리즘 개발)

  • Oh, Hong-Seob;Ju, Min-Kwan;Lee, Ju-Won
    • Proceedings of the Korea Concrete Institute Conference
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    • 2008.04a
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    • pp.1029-1032
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    • 2008
  • Nowadays, the necessity of the NDT technique for concrete structure has been increased due to maintenance of infra-structure. With this reason, NDT detecting technique has been considered as a effective maintenance method to prevent the rapid degradation of the infra-structure. In this study, to investigate the internal defect of concrete structure, ultrasonic detection device and radar equipment was applied then tested in laboratory and field. In the result of the experimental test, the internal cavity and steel arrangement can be detected and it was possible to adopt the ultrasonic detection method to the maintenance of concrete structure. And an algorithm for performing the maintenance procedure of concrete structure applying ultrasonic detection device and radar equipment was developed and suggested in this study.

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Trench Power MOSFET using Separate Gate Technique for Reducing Gate Charge (Gate 전하를 감소시키기 위해 Separate Gate Technique을 이용한 Trench Power MOSFET)

  • Cho, Doohyung;Kim, Kwangsoo
    • Journal of IKEEE
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    • v.16 no.4
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    • pp.283-289
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    • 2012
  • In this paper, We proposed Separate Gate Technique(SGT) to improve the switching characteristics of Trench power MOSFET. Low gate-to-drain 전하 (Miller 전하 : Qgd) has to be achieved to improve the switching characteristics of Trench power MOSFET. A thin poly-silicon deposition is processed to form side wall which is used as gate and thus, it has thinner gate compared to the gate of conventional Trench MOSFET. The reduction of the overlapped area between the gate and the drain decreases the overlapped charge, and the performance of the proposed device is compared to the conventional Trench MOSFET using Silvaco T-CAD. Ciss(input capacitance : Cgs+Cgd), Coss(output capacitance : Cgd+Cds) and Crss(reverse recovery capacitance : Cgd) are reduced to 14.3%, 23% and 30% respectively. To confirm the reduction effect of capacitance, the characteristics of inverter circuit is comprised. Consequently, the reverse recovery time is reduced by 28%. The proposed device can be fabricated with convetional processes without any electrical property degradation compare to conventional device.

Performance Analysis of Random Resource Selection in LTE D2D Discovery (LTE D2D 디스커버리에서 무작위 자원 선택 방법에 대한 성능 분석)

  • Park, Kyungwon;Kim, Joonyoung;Jeong, Byeong Kook;Lee, Kwang Bok;Choi, Sunghyun
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.42 no.3
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    • pp.577-584
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    • 2017
  • Long Term Evolution device-to-device (LTE D2D) is a key technology to mitigate data traffic load in a cellular system. It facilitates direct data exchange between neighboring users, which is preceded by D2D discovery. Each device advertises its presence to neighboring devices by broadcasting its discovery message. In this paper, we develop a mathematical analysis to assess the probability that discovery messages are successfully transmitted at the D2D discovery stage. We make use of stochastic geometry for modeling spatial statistics of nodes in a two dimensional space. It reflects signal to noise plus interference ratio (SINR) degradation due to resource collision and in-band emission, which leads to the discovery message reception probability being modeled as a function of the distance between the transmitter and the receiver. Numerical results verify that the newly developed analysis accurately estimates discovery message reception probabilities of nodes at the D2D discovery stage.

Analysis of Subthreshold Swing Mechanism by Device Parameter of Asymmetric Double Gate MOSFET (소자 파라미터에 따른 비대칭 DGMOSFET의 문턱전압이하 스윙 분석)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.19 no.1
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    • pp.156-162
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    • 2015
  • This paper has analyzed how conduction path and electron concentration for the device parameters such as oxide thickness, channel doping, and top and bottom gate voltage influence on subthreshold swing of asymmetric double gate MOSFET. Compared with symmetric and asymmetric double gate MOSFET, asymmetric double gate MOSFET has the advantage that the factors to be able to control the short channel effects increase since top and bottom gate oxide thickness and voltages can be set differently. Therefore the conduction path and electron concentration for top and bottom gate oxide thickness and voltages are investigated, and it is found the optimum conditions that the degradation of subthreshold swing, severe short channel effects, can reduce. To obtain the analytical subthreshold swing, the analytical potential distribution is derived from Possion's equation. As a result, conduction path and electron concentration are greatly changed for device parameters, and subthreshold swing is influenced by conduction path and electron concentration of top and bottom.

Fabrication and Characterization of a GaN Light-emitting Diode (LED) with a Centered Island Cathode

  • Park, Yun Soo;Lee, Hwan Gi;Yang, Chung-Mo;Kim, Dong-Seok;Bae, Jin-Hyuk;Cho, Seongjae;Lee, Jung-Hee;Kang, In Man
    • Journal of the Optical Society of Korea
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    • v.16 no.4
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    • pp.349-353
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    • 2012
  • Uniform spreading of injection current in light-emitting diodes (LEDs) is one of the crucial requirements for better device performances. It is reported that non-uniform current spreading leads to low output power, high current crowding, heating, and reliability degradation of the LED device. This paper reports on the effects of different surface and electrode geometries in the LEDs. To increase the output power of LEDs and reduce the series resistance, a rectangular-type LED (RT-LED) with a centered island cathode has been fabricated and investigated by comparison with a conventional LED (CV-LED). The performances of RT-LEDs were prominently enhanced via uniform current spreading and low current crowding. Performances in terms of increased output power and lower forward voltage of simulated RT-LEDs are much superior to those of CV-LEDs. Based on these results, we investigated the correlation between device geometries and optical characteristics through the fabricated CV and RT-LEDs. The measured output power and forward voltage of the RT-LEDs at 100 mA are 64.7% higher and 8% smaller compared with those of the CV-LEDs.