• 전자공학회논문지A
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• 제31A권8호
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• pp.72-79
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• 1994

In this paper semi empirical models are presented for the hot electron induced threshold voltage shift(${\Delta}V_{t}$) and effective channel shortening length (${\Delta}L_{H}$) in degraded PMOSFET. Trapped electron charges in gate oxide are calculated from the well known gate current model and ΔLS1HT is calculated by using trapped electron charges. (${\Delta}L_{H}$) is a function of gate stress voltage such as threshold voltage shift and degradation of drain current. From the correlation between (${\Delta}L_{H}$) has a logarithmic function of stress time. From the measured results, (${\Delta}V_{t}$) and (${\Delta}L_{H}$) are function of initial gate current and device channel length.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 정기총회 및 학술대회 전문대학교육위원
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• pp.89-91
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• 2008

Organic EL has been expected to adopt to a new styles of technology that make flat display after Tang & Vanslyke made good electric luminescence device in late 1980s. Their studies based on multi layer structure that consists of emitting layer and carrier transporting layer using proper organic material. But oxidization of organic layer by ITO, energy walls in both pole interface, contaminations of ITO surface, importance of protecting membrane, diffusive dimming of light to cathode organic layer, these causes of degradations are common facts of a macromolecule and micro molecule. We think these degradation caused by the impact of heat and electro-chemical factor, bulk effect and interface phenomenon, and raise a question.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권9호
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• pp.523-526
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• 2000

A dual gate trench emitter IGBT structure is proposed and studied numerically using the device simulator MEDICI. The on-state forward voltage drop latch-up current density turn-off time and breakdown voltage of the proposed structure are compared with those of the conventional DMOS-IGBT and trench gate IGBT structures. The proposed structure forms an additional channel and increases collector current level resulting in reduction of on -state forward voltage drop. In addition the trench emitter increases latch-up current density by 148% in comparison with that for the conventional DMOS-IGBT and by 83% compared with that for the trench gate IGBT without degradation in breakdown voltage when the half trench gate width(Tgw) and trench emitter depth(Ted) are fixed at $1.5\mum\; and\; 2\mum$, respectively

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.266-269
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• 1997

Hot carrier effects as a function of bias stress time and bias stress conditions were syste-matica1ly investigated in p-channel po1y-Si TFT's fabricated on the quartz substrate. The device degradation was observed for the negative bias stress. After positive bias stressing, Improvement of electrical characteristic except for subthreshold slope was observed. It was found that these results were related to the hot carrier injection into the gate oxide and interface states at the poly-Si/SiO$_2$interface rather than defects states generation under bias stress.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.156-158
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• 2002

Reduction of on-resistance($R_{on}$) in high voltage devices is of critical importance for the power consumption of the device. $R_{on}$ decreases with increase of the doping concentration of the drift region. However, breakdown voltage(BV) decreaes also with increase of doping concentration. In this report, a multi-resurf LDMOS[1] strcuture is proposed to reduce the $R_{on}$ which allows no degradation in BV. The on-and off-state characteristics of the proposed structure are simulated using the two-dimensional devices simulator ATLAS and compared with those from the conventional structure.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 B
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• pp.1512-1514
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• 2005

사이리스터의 파괴 원인에는 온도, 전압, 전류, 진동 및 압력 등이 있다. 본 논문에서는 이러한 파괴원인들 중에서 전압과 온도를 스트레스 인자로 하여 가속열화에 따른 소자의 항복전압 특성의 변화에 대해 실험을 통해 분석하였다. 실험에 사용한 사이리스터는 $V_{DRM}$=1800, $V_{RRM}$=2300V, $I_{DRM}$, $I_{RRM}$=20mA인 소자를 사용하였으며, 실험 시 인가전압은 1kV, 온도는 $100^{\circ}C$로 고정하였다. 가속열화에 따른 순방향 및 역방향 항복특성의 변화를 가속열화 시간에 따라 나타내었고, 이를 바탕으로 전압과 온도에 따른 항복전압 감소의 원인과 열화의 진행에 대해 기술하였다.

• Journal of Information Processing Systems
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• 제13권6호
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• pp.1602-1612
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• 2017

Since rapidly disseminating of Internet of Things (IoT) as the new communication paradigm, a number of studies for various applications is being carried out. Especially, interest in the smart medical system is rising. In the smart medical system, a number of medical devices are distributed in popular area such as station and medical center, and this high density of medical device distribution can cause serious performance degradation of communication, referred to as the coexistence problem. When coexistence problem occurs in smart medical system, reliable transmitting of patient's biological information may not be guaranteed and patient's life can be jeopardized. Therefore, coexistence problem in smart medical system should be resolved. In this paper, we propose a distributed coexistence mitigation scheme for IoT-based smart medical system which can dynamically avoid interference in coexistence situation and can guarantee reliable communication. To evaluate the performance of the proposed scheme, we perform extensive simulations by comparing with IEEE 802.15.4 MAC protocol which is a traditional low-power communication technology.

• Journal of the Korean Physical Society
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• 제73권11호
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• pp.1675-1678
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• 2018

Methylammonium lead halide ($MAPbI_3$) perovskites are considered as promising materials owing to their excellent optical and electrical properties. However, perovskite materials suffer from degradation in air, which limits their practical applications. Here, we demonstrate successful passivation of the $MAPbI_3$ photodetectors through monochloro-para-xylylene (Parylene-C) deposition. The time-dependent photocurrent characteristics were systematically investigated, and we achieved significantly improved device performance and stability with Parylene-C passivation. Based on the excitation-power-dependent photoluminescence (PL) data, we confirmed that Parylene-C can reduce the carrier losses in $MAPbI_3$, leading to the enhancement of photocurrent and PL in $MAPbI_3$ photodetectors.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제16권4호
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• pp.1249-1265
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• 2022

Video streaming has become one of the most popular applications for mobile devices. The network bandwidth required for video streaming continues to exponentially increase as video quality increases and the user base grows. Multi-Path TCP (MPTCP), which allows devices to communicate simultaneously through multiple network interfaces, is one of the solutions for providing robust and reliable streaming of such high-definition video. However, mobile video streaming over MPTCP raises new concerns, e.g., power consumption and cellular data usage, since mobile device resources are constrained, and users prefer to minimize such costs. In this work, we propose a mobile video streaming framework over MPTCP (mDASH) to reduce the costs of energy and cellular data usage while preserving feasible streaming quality. Our evaluation results show that by utilizing knowledge about video behavior, mDASH can reduce energy consumption by up to around 20%, and cellular usage by 15% points, with minimal quality degradation.

• 한국지반신소재학회논문집
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• 제19권4호
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• pp.41-50
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• 2020

콘크리트 구조물의 균열은 장기간 지속 시 철근의 부식을 촉진시키므로 구조적 사용성을 보장하고 열화를 방지하기 위해 정기적인 현장 점검이 필수적이다. 대부분의 시설물 안전점검은 육안 검사에 의존하고 있어 비용과 시간 소모가 심하고 점검자에 따라 결과의 신뢰도 차이가 발생한다. 본 연구에서는 카메라로 촬영된 균열의 이미지 분석을 통해 콘크리트 균열의 폭과 길이를 측정하는 장치로서 안전진단 및 유지관리에 사용할 수 있는 휴대용 측정 장치를 개발하였다. 이 장치는 측정자가 육안으로 발견한 균열을 가까운 거리 (3m) 이내에서 촬영하고 레이저 거리측정으로 단위 픽셀크기를 정확히 산정하여, 본 연구에서 개발한 이미지 처리 알고리즘으로 균열 길이와 폭을 자동으로 산정할 수 있다. 측정결과 실험에 적용한 균열 이미지를 이용하여 3m 거리 이내에서 0.3mm 균열의 길이 측정은 약 10% 오차 범위에서 측정 가능하였다. 균열 폭의 경우 이진화 과정에서 진동 및 Blurring에 의한 주변픽셀을 검출해 과대평가되는 경향을 나타내었으나, 균열 폭 감소함수를 적용하여 효과적으로 보정할 수 있었다.