• Transactions on Electrical and Electronic Materials
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• 제12권3호
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• pp.93-97
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• 2011

In this paper, we discuss design considerations for an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a lateral asymmetric channel (LAC) doping profile. We employed a 0.35 ${\mu}M$ standard complementary MOSFET process for fabrication of the devices. The gates to the LAC doping overlap lengths were 0.5, 1.0, and 1.5 ${\mu}M$. The drain current ($I_{ON}$), transconductance ($g_m$), substrate current ($I_{SUB}$), drain to source leakage current ($I_{OFF}$), and channel-hot-electron (CHE) reliability characteristics were taken into account for optimum device design. The LAC devices with shorter overlap lengths demonstrated improved $I_{ON}$ and $g_m$ characteristics. On the other hand, the LAC devices with longer overlap lengths demonstrated improved CHE degradation and $I_{OFF}$ characteristics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.331-331
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• 2012

With the NAND Flash scaling down, it becomes more and more difficult to follow Moore's law to continue the scaling due to physical limitations. Recently, three-dimensional (3D) flash memories have introduced as an ideal solution for ultra-high-density data storage. In 3D flash memory, as the process reason, we need to use poly-Si TFTs instead of conventional transistors. So, after combining charge trap flash (CTF) structure and poly-Si TFTs, the emerging device SONOS-TFTs has also suffered from some reliability problem such as hot carrier degradation, charge-trapping-induced parasitic capacitance and resistance which both create interface traps. Charge pumping method is a useful tool to investigate the degradation phenomenon related to interface trap creation. However, the curves for charge pumping current in SONOS TFTs were far from ideal, which previously due to the fabrication process or some unknown traps. It needs an optimization and the important geometrical effect should be eliminated. In spite of its importance, it is still not deeply studied. In our work, base-level sweep model was applied in SONOS TFTs, and the nonideal charge pumping current was optimized by adjusting the gate pulse transition time. As a result, after the optimizing, an improved charge pumping current curve is obtained.

• International Journal of Ocean System Engineering
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• 제1권3호
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• pp.148-154
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• 2011

Generally, strength degradation is caused by the absorption of moisture in composites. For this reason, a fracture is generated in the composites and traces of glass fiber degrade human health and physical damage is generated. Therefore, in this research, we studied the mechanical properties change of composites by moistureabsorption. The composites were manufactured with and without the Gel-coating process and were immersed in a moisture absorption device at $80^{\circ}C$ for more than 100 days. The mechanical properties of the moistureabsorption composites and the composites which dry after moisture-absorption were compared. The mechanical properties degradation of basalt fiber composites according to the result of the measurement of moistureabsorption was smaller than that of glass fiber composites by about 20%. In addition, the coefficient of moisture absorption was lower for the case of Gel-coating processing than the composites without the Gel-coating process by about 2% and it was deduced that Gel-coating did not have a significant effect on the mechanical properties.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1626-1628
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• 2003

The lightning arrester is a very important overvoltage protection device in the electric power system. Therefore, the inspection of lightning arrester whether it keeps its performance or not properly has close related to verifying the safety confidence of the electric power system. But the development of the deterioration measuring method and on-line detecting system, is necessary to monitor the deterioration of the lightening arrestor. In this paper, we developed the lightning arrester degradation monitoring system. This system detected leakage current of lightning arrester by using the ZCT, and analyze the third harmonics ingredient of leakage current using DFT method in the Data Acquisition Unit(DAU). The analyzed current signal is transmit to the Human-Machine Interface(HMI), and HMI alarmed when accident are occurred and informed with the amplitude of leakage current to the operator.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.13-16
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• 2004

The reliability of 1.550m-wavelength InGaAs mesa waveguide photodiodes(WGPDs), which developed for 40-Gbps optical receiver applications, fabricated by metal organic chemical vapor deposition is investigated. Reliability is examined by both high-temperature storage tests and the accelerated life tests by monitoring dark current and breakdown voltage. The median device lifetime and the activation energy of the degradation mechanism are computed for WGPD test structures. From the accelerated life test results, the activation energy of the degradation mechanism and median lifetime of these devices in room temperature are extracted from the log-normal failure model by using average lifetime and the standard deviation of that lifetime in each test temperature. It is found that the WGPD structure yields devices with the median lifetime of much longer than $10^6$ h at practical use conditions. Consequently, this WGPD structure has sufficient characteristics for practical 40-Gbps optical receiver modules.

• 대한전자공학회논문지SP
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• 제47권2호
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• pp.45-50
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• 2010

영상 보간법은 영상의 해상도를 향상시키기 위해서 사용되는 기술로서 보간 결과 영상에서 나타나는 화질 열화가 아직 까지 해결되지 않은 문제점이다. 이를 위해서 본 논문에서는 손실 정보 추정을 이용한 영상 보간법을 제안하고 제안한 알고리즘을 휴대용 장치에서 구현하였다. 제안하는 방법에서는 획득 저해상도 영상을 더욱 작은 크기로 축소한 후 다시 보간을 거쳐서 나온 영상을 이용해서 에러를 계산하고, 그 결과값을 보간하여 추정 손실 정보를 생성한다. 추정된 손실 정보는 적응적 가중치와 경합하여 최종적으로 보간된 고해상도 C영상에 더해지게 된다. 실험을 통해서 제안한 방볍이 기존의 알고리즘틀 보다 PSNR에서 2dB이상 향상된 것을 알 수 있었다. 또한 휴대용 장치에서 구현하여 실시간 처려가 가능한 것을 확인하였다. 이와 같이 제안한 방법은 영상의 확대와 영상 복원을 위한 다양한 응용 환경에서 사용될 수 있다.

• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.24-28
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• 2012

In this study, we fabricated an amorphous InGaZnO pseudo-MOS transistor (a-IGZO ${\Psi}$-MOSFET) with a stacked $Si_3N_4/SiO_2$ (NO) gate dielectric and evaluated reliability of the devices with various thicknesses of a $SiO_2$ buffer layer. The roles of a $SiO_2$ buffer layer are improving the interface states and preventing degradation caused by the injection of photo-created holes because of a small valance band offset of amorphous IGZO and $Si_3N_4$. Meanwhile, excellent electrical properties were obtained for a device with 10-nm-thick $SiO_2$ buffer layer of a NO stacked dielectric. The threshold voltage shift of a device, however, was drastically increased because of its thin $SiO_2$ buffer layer which highlighted bias and light-induced hole trapping into the $Si_3N_4$ layer. As a results, the pseudo-MOS transistor with a 20-nm-thick $SiO_2$ buffer layer exhibited improved electrical characteristics and device reliability; field effective mobility(${\mu}_{FE}$) of 12.3 $cm^2/V{\cdot}s$, subthreshold slope (SS) of 148 mV/dec, trap density ($N_t$) of $4.52{\times}1011\;cm^{-2}$, negative bias illumination stress (NBIS) ${\Delta}V_{th}$ of 1.23 V, and negative bias temperature illumination stress (NBTIS) ${\Delta}V_{th}$ of 2.06 V.

• 마이크로전자및패키징학회지
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• 제26권3호
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• pp.63-69
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• 2019

전자부품에 대한 보드실장은 아직까지 솔더를 이용한 접합기술을 주로 이용하고 있다. 그러나, 솔더의 크? 및 피로특성으로 인한 접합부 내구한계로, 자동차 전장모듈에서는 반영구적인 접합기술인 프레스 핏(Press-fit) 접합기술 적용을 확대하고 있다. 프레스 핏 접합은 프레스 핏 금속단자를 보드내 쓰루 홀(Through hole)에 기계적으로 삽입하여 체결하는 접합기술로써, 적절한 금속단자의 소성변형으로 쓰루 홀 내부 표면접합을 밀착시킴으로써 강건한 접합을 유도한다. 본 논문에서는 보드내 쓰루 홀 크기 및 표면처리에 따른 프레스 핏 접합 특성 및 신뢰성을 솔더링과 함께 비교하기 위해, 보드 쓰루 홀 크기에 따른 삽입강도 및 삽발강도를 평가하였으며, 열충격 시험을 통한 실시간 저항변화를 통해 프레스 핏 및 솔더링 접합부의 저항변화를 관찰하였다. 또한, 각 접합부위 분석을 통한 프레스 핏 및 솔더링 접합열화를 분석하여 주요 파손모드를 고찰하고자 하였다.

• 한국전기전자재료학회논문지
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• 제35권1호
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• pp.86-92
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• 2022

Despite otherwise advantageous properties, the performance and reliability of devices manufactured in β-Ga₂O₃ on semi-insulating Ga₂O₃ substrates may degrade because of poorly mitigated self-heating, which results from the low thermal conductivity of Ga₂O₃ substrates. In this work, we investigate and compare self-heating and device performance of β-Ga₂O₃ MESFETs on substrates of semi-insulating Ga₂O₃ and 4H-SiC. Electron mobility in β-Ga₂O₃ is negatively affected by increasing lattice temperature, which consequently also negatively influences device conductance. The superior thermal conductivity of 4H-SiC substrates resulted in reduced β-Ga₂O₃ lattice temperatures and, thus, mitigates MESFET drain current degradation. This, in turn, allows practically reduced device dimensions without deteriorating the performance and improved device reliability.

• 대한임베디드공학회논문지
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• 제18권3호
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• pp.89-100
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• 2023

Recently, on-device artificial intelligence (AI) solutions using mobile devices and embedded edge devices have emerged in various fields, such as computer vision, to address network traffic burdens, low-energy operations, and security problems. Although vision transformer deep learning models have outperformed conventional convolutional neural network (CNN) models in computer vision, they require more computations and parameters than CNN models. Thus, they are not directly applicable to embedded edge devices with limited hardware resources. Many researchers have proposed various model compression methods or lightweight architectures for vision transformers; however, there are only a few studies evaluating the effects of model compression techniques of vision transformers on performance. Regarding this problem, this paper presents a performance evaluation of vision transformers on embedded platforms. We investigated the behaviors of three vision transformers: DeiT, LeViT, and MobileViT. Each model performance was evaluated by accuracy and inference time on edge devices using the ImageNet dataset. We assessed the effects of the quantization method applied to the models on latency enhancement and accuracy degradation by profiling the proportion of response time occupied by major operations. In addition, we evaluated the performance of each model on GPU and EdgeTPU-based edge devices. In our experimental results, LeViT showed the best performance in CPU-based edge devices, and DeiT-small showed the highest performance improvement in GPU-based edge devices. In addition, only MobileViT models showed performance improvement on EdgeTPU. Summarizing the analysis results through profiling, the degree of performance improvement of each vision transformer model was highly dependent on the proportion of parts that could be optimized in the target edge device. In summary, to apply vision transformers to on-device AI solutions, either proper operation composition and optimizations specific to target edge devices must be considered.