• Transactions of Materials Processing
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• v.11 no.7
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• pp.575-580
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• 2002

To evaluate elastic and micro-failure properties of MEMS materials, the electro-statically operated test devices were designed and fabricated by micro machining technology. The test structures consist or comb drives for loading and suspending beams in testing. From the analysis of beam displacement based on elastic beam theory, elastic modulus and yield strength of Al film were measured. And, by introducing the micro notch and cyclic loading, the micro-failure was Induced and the micro-fracture toughness of Si film was evaluated. Moreover, the cycles to failure were estimated from the degradation of resonant frequency. Finally, the effects of notch on micro failure were discussed.

• ETRI Journal
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• v.28 no.2
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• pp.253-256
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• 2006

We propose a novel power metal oxide semiconductor field effect transistor (MOSFET) employing a strained-Si channel structure to improve the current drivability and on-resistance characteristic of the high-voltage MOSFET. A 20 nm thick strained-Si low field channel NMOSFET with a $0.75\;{\mu}m$ thick $Si_{0.8}Ge_{0.2}$ buffer layer improved the drive current by 20% with a 25% reduction in on-resistance compared with a conventional Si channel high-voltage NMOSFET, while suppressing the breakdown voltage and subthreshold slope characteristic degradation by 6% and 8%, respectively. Also, the strained-Si high-voltage NMOSFET improved the transconductance by 28% and 52% at the linear and saturation regimes.

• Journal of electromagnetic engineering and science
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• v.14 no.4
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• pp.353-359
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• 2014

Recently, the use of mobile devices has increased, and mobile traffic is growing rapidly. In order to deal with such massive traffic, cognitive radio (CR) is applied to efficiently use limited-spectrum resources. However, there can be multiple communication systems trying to access the white space (unused spectrum), and inevitable interference may occur to cause mutual performance degradation. Therefore, understanding the effects of interference in CR-based systems is crucial to meaningful operations of these systems. In this paper, we consider a long-term evolution (LTE) system using additional spectra by accessing the TV white space, where low-power devices (LPDs) are licensed primary users, in addition to TV broadcasting service providers. We model such a heterogeneous system to analyze the co-existence problem and evaluate the interference effects of LPDs on LTE user equipment (UE) throughput. We then present methods to mitigate the interference effects of LPDs by 'de-selecting' some of the UEs to effectively increase the overall sector throughput of the CR-based LTE system.

• Proceedings of the KIEE Conference
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• 2007.10a
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• pp.469-470
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• 2007

In this paper, we propose a simple and relative electrode contact monitoring method. By exploiting the power line interference, which is regarded as one of the worst noise sources for bio-potential measurement, the relative difference in electrode impedance can be measured without a current or voltage source. Substantial benefits, including no extra circuit components, no degradation of the body potential driving circuit, and no electrical safety problem, can be achieved using this method. Furthermore, this method can be applied to multi-channel isolated bio-potential measurement systems and home health care devices under a steady measuring environment.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.354-355
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• 2009

In the fabrication of inverted top-emitting organic light emitting diodes (ITOLEDs), the sputtering process is needed for deposition of transparent conducting oxide (TCO) as top anode. Energetic particle bombardment, however, changes the physical properties of underlying layers. In this study, we examined plasma process effects on tungsten oxide ($WO_3$) hole injection layer (HIL). From our results, we suggest the theoretical mechanism to explain the correlation between the physical property changes caused by plasma process on $WO_3$ HIL and degradation of device performances.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.683-686
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• 1998

Hot carrier effects as a function of bias stress time and bias stress consitions were syste-matically investigated in p-channel poly-Si TFT s fabricated on the quartz substrate. The device degradation was observed for the negative bias stress, while improvement of electrical characteristic except for subthreshold slope was observed for the positive bias stress. It was found that these results were related to the hot-carrier injection into the gate oxide and interface states at the poly-Si/$SiO_2$interface rather than defects states generation within the poly-Si active layer under bias stress.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.175-180
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• 2003

As the integrated circuit device shrinks to the deep submicron regime, the ion implantation process with high ion dose has been attracted beyond the conventional ion implantation technology. In particular, for the case of boron ion implantation with low energy and high dose, the stabilization and throughput of semiconductor chip manufacturing are decreasing because of trouble due to the machine conditions and beam turning of ion implanter system. In this paper, we focused to the improved characteristics of processing conditions of ion implantation equipment through the modified deceleration mode. Thus, our modified recipe with low energy and high ion dose can be directly apply in the semiconductor manufacturing process without any degradation of stability and throughput.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.224-226
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• 2006

In this paper, we have studied for analysis of the partial discharge(PD) signal in power transmission line. The PD signal has estimated as detected signal accumulation of a PRPDA method by using Labview, and analyzed with neuro-fuzzy algorithm. With practical PD logic implementation of theoretical detected system and hardware implementation, the device for Hipotronics Company's 22.9kV or 154kV setup has generated and then has applied with 18kV,20kV with 1:1 time probe. It's also used the LDPE O.27mmt (scratch error O.05mmt) to sample for making PD. Our new class of PD detected algorithm has also compared with previous PRPDA or Fuzzy algorithm, which has diagnose more conveniently by adding numerical values.

• Journal of the Semiconductor & Display Technology
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• v.1 no.1
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• pp.15-19
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• 2002

A new vacuum packaging process in wafer level is developed for the surface micromachining devices using glass silicon anodic bonding technology. The inside pressure of the packaged device was measured indirectly by the quality factor of the mechanical resonator. The measured Q factor was about 5$\times10^4$ and the estimated inner pressure was about 1 mTorr. And it is also possible to change the inside pressure of the packaged devices from 2 Torr to 1 mTorr by varying the amount of the Ti gettering material. The long-term stability test is still on the way, but in initial characterization, the yield is about 80% and the vacuum degradation with time was not observed.

• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.53-57
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• 2012

This paper is for accurately simulating the breakdown of MHEMTs with an InP-etchstop layer. 2D-Hydrodynamic simulation parameters are investigated and calibrated for the InP-epitaxy layer. With these calibrated parameters, simulations are performed and analyzed for the breakdown of devices with an InP-etchstop layer. In the paper, the impact-ionization coefficients, the mobility degradation due to doping concentration, and the saturation velocity for InP-epitaxy layer are newly calibrated for more accurate breakdown simulation.