A Study on Wafer Level Vacuum Packaging using Epi poly for MEMS Applications

Epi poly를 이용한 MEMS 소자용 웨이퍼 단위의 진공 패키징에 대한 연구

  • 석선호 (서울대학교 전기컴퓨터공학부) ;
  • 이병렬 (서울대학교 전기컴퓨터공학부) ;
  • 전국진 (서울대학교 전기컴퓨터공학부)
  • Published : 2002.08.01

Abstract

A new vacuum packaging process in wafer level is developed for the surface micromachining devices using glass silicon anodic bonding technology. The inside pressure of the packaged device was measured indirectly by the quality factor of the mechanical resonator. The measured Q factor was about 5$\times10^4$ and the estimated inner pressure was about 1 mTorr. And it is also possible to change the inside pressure of the packaged devices from 2 Torr to 1 mTorr by varying the amount of the Ti gettering material. The long-term stability test is still on the way, but in initial characterization, the yield is about 80% and the vacuum degradation with time was not observed.

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