• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.47-52
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• 2007

Organic field-effect transistors (OFETS) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with varying channel length. The CuPc FET device was made a top-contact type and the channel length was a $100\;{\mu}m,\;50\;{\mu}m,\;40\;{\mu}m,\;and\;30\;{\mu}m$ and the channel width was a fixed at 3 mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with varying channel length (L) and we calculated the effective mobility. Also, we measured a capacitance-voltage (C-V) by applied bias voltage with varying frequency at 43, 100, 1000 Hz.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.304-307
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• 2004

As optical fiber communication grows, the fiber alignment become the focus of industrial attention. This greatly influence the overall production rates for the opto-electric products. We proposed multi-axis nano positioning stage for optical fiber alignment. This device has 3 DOF translation and sub nanometer resolution. This nano stage consist of 3 PZT-driven flexure stages which are stacked parallel. The displacement of it is measured with capacitance gauge and is controlled by computer-embedded main controller. The design process of flexure stage using FEM is proposed and the performance evaluation of this system is verified with experiments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.977-982
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• 2000

Conventional transistors which have vertical structure show increased parasitic capacitance characteristics in accordance with the increase of non-active base area and collector area. These consequently have disadvantage for high speed switching performance. In this paper, a lateral structure transistor which has minimized parasitic capacitance by using SDB(Silicon Direct Bonding) wafer and oxide sidewall isolation utilizing silicon trench technology is presented. Its structural characteristics are designed by ATHENA(SUPREM4), the process simulator from SILVACO International, and its performance is proven by ATLAS, the device simulator from SILVACO International. The performance of the proposed lateral structure transistor is certified through the V$\_$CE/-I$\_$C/ characteristics curve, h$\_$FE/-I$\_$C/ characteristics, and GP-plot. Cutoff Frequency is 13.7㎓.

• Journal of Information Display
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• v.9 no.2
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• pp.1-4
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• 2008

In this study, we investigate the capacitance-voltage (C-V) characteristics of metal-insulator-semiconductor (MIS) capacitors consisting of pentacene, as an organic semiconductor, and polymeric insulators such as poly(4-vinylphenol) (PVP) orpolystyrene (PS) prepared by spin-coating process, to analyze the interfacial characteristics between pentacene and polymeric insulators. Compared with the device with PS, the MIS capacitor with PVP exhibited a pronounced shift in the flat-band voltage according to the bias sweep direction. This hysteric feature in the C-V characteristics is thought to be attributed to the trapped charges at the interface between pentacene and PVP owing to the hydrophilicity of PVP. From the experimental results, we can conclude that surface polarity of polymeric insulator has a critical effect on the interfacial properties, thereby affecting the bias stability of organic thin-film transistors.

• Transactions on Electrical and Electronic Materials
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• v.8 no.3
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• pp.131-134
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• 2007

An $ITO/Alq_3/Al$ structure was used to study complex impedance of $Alq_3$ based organic light-emitting diodes. Equivalent circuit was analyzed in a device structure of $ITO/Alq_3/Al$ with a thickness layer of $Alq_3$ of 100 nm. The obtained impedance was able to be fitted using equivalent circuit model of parallel combination of resistance $R_p$ and capacitance $C_p$ with a small series resistance of $R_s$.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2001.04a
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• pp.89-94
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• 2001

A cylindrical capacitance-type spindle displacement sensor was designed and tested in the hard turning as a way to develop a sensor that can estimate cutting forces without using a tool dynamometer. The displacement sensor was installed between the face of spindle cover and the chucking element, and measured pure radial motion of the spindle. Ceramic inserts and tool steel workpieceof 65 Rc were used during the hard turning tests. The signals from the sensor showed the same pattern of cutting force variations as those from the tool dynamometer. The research results showed that the developed sensor could be utilized as an effective and cheap on-line sensing device to estimate cutting forces.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.10a
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• pp.213-218
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• 2004

As optical fiber communication grows, the fiber alignment become the focus of industrial attention. This greatly influence the overall production rates for the opto-electric products. We proposed multi-axis nano positioning stage for optical fiber alignment. This device has 3 DOF translation and sub nanometer resolution. This nano stage consist of 3 PZT-driven flexure stages which are stacked parallel. The displacement of it is measured with capacitance gauge and is controlled by computer-embedded main controller. The design process of flexure stage using FEM is proposed and the performance evaluation of this system is verified with experiments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.63-66
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• 2003

In this paper, the electrical characteristics of single oxide layer due to high temperature diffusion process, wafer resistivity and thickness of poly backseat was researched. The oxide quality was examined through capacitance-voltage characteristics, and besides, it will be describe the capacitance-voltage characteristics of the single oxide layer by semiconductor device simulation.

• Journal of Biomedical Engineering Research
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• v.39 no.1
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• pp.10-15
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• 2018

In this paper, we present a wearable measurement system for monitoring rounded shoulders. The system contains a shoulder correction band and a stretch sensor that can correct and measure shoulder posture, respectively. The capacitance of the stretch sensor changes linearly according to changes in the shoulders. To verify measurement, a motion analysis system was used as the reference to compare the change in the rounded angles of the shoulders and the change in the stretch sensor's capacitance. The results indicated that there is a high correlation between the two changes and the system can be used as a monitoring device for rounded shoulders.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.557-562
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• 2004

For constructing virtual environment it is more natural to model object as deformable body than as rigid body. High accuracy of simulation of model and low-latency computational cost for real-time simulation should be guaranteed. We pre-compute Green function through finite element analysis of deformable body and it is possible to simulate deformation of body in real-time environment using Capacitance Matrix Algorithm. Also, the capacitance matrix algorithm enables to construct the haptic rendering which serves the reaction force through a haptic device. The Newmark scheme is used for the more realistic haptic rendering and dynamic simulation in real-time.