• Applied Science and Convergence Technology
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• 제24권5호
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• pp.178-183
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• 2015

Optical, electrical and structural properties of VOx/ZnO/VOx thin film are studied. The VOx/ZnO/VOx multilayer is deposited by using a radio frequency (RF) sputtering system. The VOx/ZnO/VOx thin film shows the high temperature coefficient of resistance (TCR) of $-3.12%/^{\circ}C$ and the low sheet resistance of about 80 $k{\Omega}/sq$ at room temperature. The responsivity and detectivity of the bolometer are measured as a function of modulation frequency.

• 전자공학회논문지A
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• 제32A권11호
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• pp.52-62
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• 1995

We developed a two-dimensional numerical simulator which can analyze the electrical as well as optical characteristics and evaluate the detection performances of self-signal processing infrared detectors. It solves the poisson equation and the electron, hole current continuity equations including the optical generation and recombination models. To speed up convergency rate. the Newton algorithm is used. Automatic triangular grid generator make it easy to simulate the devices with the various read-out geometries. This simulator can show the variation of spatial resolution which is caused by the transit velocity and transit time dispersion in bifurcate and horn geometries respectively. Also, we calculated the responsivity, noise, and detectivity in respect of the applied electric field and background field-of-view. The results obtained from simulation correspond to those of experiments, and it is verified that horn read-out geometry has the superior spatial resolution and detection performance to bifurcate geometry.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.605-608
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• 1998

In this paper, we have investigated the pyroelectric characteristics of the $20\mu\textrm{m}-thick$ $LiTaO_3$ single crystal with black coating by using the nondestructive dynamic method. The $LiTaO_3shows$ the maximum pyroelectric coefficient (${\gamma}$) of $1.56$\times$10-8C/\textrm{cm}^2K$ at 40Hz and the responsivity (Rv) is 488V/W at 2Hz. The noise equivalent power (NEP) is obtained as 3.95$\times$10-10W/√Hz at 40Hz. The detectivity (D*) is obtained divided by the sample area and estimated to be 5.6$\times$108cm√Hz/W at 40Hz. These results, shows that the $LiTaO_3$ single crystals are the best candidates to pyroelectric IR sensors.

• KIEE International Transactions on Electrophysics and Applications
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• 제12C권4호
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• pp.225-228
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• 2002

The pyroelectric sensor of P(VDF/TrFE) film as sensing materials has been fabricated and evaluated with another commercial pyroelectric sensor using ceramic materials for sensing, The device was mounted in TO-5 housing to detect infrared light of a 5.5~14 ${\mu}{\textrm}{m}$ wavelength. The NEP(noise equivalent power) and specific detectivity D* of the device were 2.13$\times$10$^{-8}$ W and 9.37 10$^{6}$ cm/W under emission energy of 13 ㎼/$\textrm{cm}^2$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.343-344
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• 2008

A surface micromachined uncooled microbolometer based on the amorphous silicon was designed, fabricated, and characterized. We designed the microbolometer with a pixel size of $44\times44{\mu}m^2$ and a fill factor of about 50 % ~ 70% by considering such important factors as the thermal conductance, thermal time constant, the temperature coefficient of resistance, and device resistance. Also, we successfully fabricated the microbolometer by using surface MEMS technology. Finally, we investigated responsivity and detectivity properties depends on the active area size.

• Applied Science and Convergence Technology
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• 제24권6호
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• pp.215-218
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• 2015

A pyroelctric properties of Ni(x)-doped PMNT systems were analyzed. Modified PMNT samples were prepared using the columbite structure method. Pyroelectric current, polarization, dielectric constant and dissipation factor of Ni-doped PMNT samples were measured as a function of temperature. By adding a small amount of NiO, pyroelectricity of PMNT is increased. Unlike the normal $ABO_3$ ferroelectric, Ni-doped PMNT showed properties for relaxor ferroelectric of causing the successive phase transition over a wide temperature. The optimum conditions for obtaining compositions with improvement ferroelectric properties are a nominal addition of 0.02 mole% Ni. Also, Ni-doped PMNT ferroelectric showed excellent pyroelectric figures of merit in the vicinity of room temperature. The pyroelectric coefficient ($0.00524C/m^2K$ at $25^{\circ}C$) and figures of merit ($F_v{\sim}0.039m^2/C$ and $F_d{\sim}0.664{\times}10^{-4}Pa^{-1/2}$) of composition PMNT with 0.02 mole% Ni are comparable to the earlier reports on lead-type pyroelectrics.

• 센서학회지
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• 제10권2호
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• pp.86-90
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• 2001

A pyroelectric senior using P(VDF/TrFE) film for sensing materials has been fabricated and evaluated with other commercial pyroelectric sensors that use ceramic materials for sensing. The device was mounted in a TO-5 housing to detect infrared light of $5.5{\sim}14\;{\mu}m$ wavelength. The NEP (noise equivalent power) and specific detectivity $D^*$ of the device were $2.13{\times}10^{-8}\;W$ and $9.37{\times}10^6\;cm/w$ respectively under emission energy of $13\;{\mu}W/cm^2$ respectively. These result shows a better characteristics than other commercial pyroelectric sensors NEP $8.08{\times}10^{-7}\;W$ and $D^*$ $2.47{\times}10^5\;cm/w$.

• ETRI Journal
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• 제31권6호
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• pp.703-708
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• 2009

Silicon antimony films are studied as resistors for uncooled microbolometers. We present the fabrication of silicon films and their alloy films using sputtering and plasma-enhanced chemical vapor deposition. The sputtered silicon antimony films show a low 1/f noise level compared to plasma-enhanced chemical vapor deposition (PECVD)-deposited amorphous silicon due to their very fine nanostructure. Material parameter K is controlled using the sputtering conditions to obtain a low 1/f noise. The calculation for specific detectivity assuming similar properties of silicon antimony and PECVD amorphous silicon shows that silicon antimony film demonstrates an outstanding value compared with PECVD Si film.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2005년도 추계 학술대회
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• pp.124-128
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• 2005

To produce a highly sensitive uncooled microbolometer, the development of a high-performance thermometric material is essential. In this work, amorphous vanadium-tungsten oxide was developed as a thermometric material at a low temperature of $300^{\circ}C$, and the microbolometer, coupled with the material, was designed and fabricated using surface micromachining technology. The vanadium-tungsten oxide showed good properties for application to the microbolometer, Such as a high temperature coefficient of resistance of over -4.0 $\%$/K and good compatibility with the surface micromachining and integrated circuit fabrication process due to its low fabrication temperature. As a result, the uncooled microbolometer could be fabricated with high detectivity over $1.0\;{\times}\;10^9\;cmHz^{1/2}/W$ at a bias current of $7.5\;{\mu}A$ and a chopper frequency of 10-20 Hz

• 센서학회지
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• 제28권4호
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• pp.266-269
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• 2019

In this study, $Ag_2Se$ nanoparticles were synthesized by employing the colloidal method. The synthesized $Ag_2Se$ nanocrystals were spherical in shape with a diameter of approximately 4 nm and had high crystallinity. These attributes of $Ag_2Se$ nanocrystals were determined through images obtained from a high resolution transmission electron microscope. Thin films comprising the synthesized $Ag_2Se$ nanoparticles had an optical band gap of 1.5 eV. Furthermore, fabricated NIR sensors comprising $Ag_2Se$ nanoparticles exhibited a high detectivity of $5.5{\times}10^9$ Jones (above $1{\times}10^9$) at room temperature, leading to low power consumption